Liquid-crystalline medium

ABSTRACT

A liquid-crystalline medium which comprises at least one compound selected from the group of compounds of the formulae IA to IH, 
     
       
         
         
             
             
         
       
     
     in which
     Z 1  denotes a single bond, —CH 2 CH 2 —, —CH═CH—, —CH 2 O—, —OCH 2 —, —CF 2 O—, —OCF 2 —, —COO—, —OCO—, —C 2 F 4 —, —(CH 2 ) 4 —, —CHFCHF—, —CF 2 CH 2 —, —CH 2 CF 2 —, —C≡C—, —CF═CF—, —CH═CHCHO— or —CH 2 CF 2 O—,
 
and the use thereof for an active-matrix display, in particular based on the VA, PSA, PS-VA, PALC, FFS, PS-FFS, SA-VA, PS-IPS or IPS effect.

The invention includes a liquid-crystalline medium which comprises atleast one compound selected from the group of the compounds of theformulae IA to IH,

in which

-   Z¹ denotes a single bond, —CH₂CH₂—, —CH═CH—, —CH₂O—, —OCH₂—, —CF₂O—,    —OCF₂—, —COO—, —OCO—, —C₂F₄—, —(CH₂)₄—, —CHFCHF—, —CF₂CH₂—,    —CH₂CF₂—, —C≡C—, —CF═CF—, —CH═CHCHO— or —CH₂CF₂O—.

Media of this type can be used, in particular, for electro-opticaldisplays having active-matrix addressing based on the ECB effect and forIPS (in-plane switching) displays or FFS (fringe field switching)displays.

The principle of electrically controlled birefringence, the ECB effector also DAP (deformation of aligned phases) effect, was described forthe first time in 1971 (M. F. Schieckel and K. Fahrenschon, “Deformationof nematic liquid crystals with vertical orientation in electricalfields”, Appl. Phys. Lett. 19 (1971), 3912). This was followed by papersby J. F. Kahn (Appl. Phys. Lett. 20 (1972), 1193) and G. Labrunie and J.Robert (J. Appl. Phys. 44 (1973), 4869).

The papers by J. Robert and F. Clerc (SID 80 Digest Techn. Papers(1980), 30), J. Duchene (Displays 7 (1986), 3) and H. Schad (SID 82Digest Techn. Papers (1982), 244) showed that liquid-crystalline phasesmust have high values for the ratio of the elastic constants K₃/K₁; highvalues for the optical anisotropy Δn and values for the dielectricanisotropy of Δε≤−0.5 in order to be suitable for use inhigh-information display elements based on the ECB effect.Electro-optical display elements based on the ECB effect have ahomeotropic edge alignment (VA technology=vertically aligned).Dielectrically negative liquid-crystal media can also be used indisplays which use the so-called IPS or FFS effect.

Displays which use the ECB effect, as so-called VAN (vertically alignednematic) displays, for example in the MVA (multi-domain verticalalignment, for example: Yoshide, H. et al., paper 3.1: “MVA LCD forNotebook or Mobile PCs . . . ”, SID 2004 International Symposium, Digestof Technical Papers, XXXV, Book I, pp. 6 to 9, and Liu, C. T. et al.,paper 15.1: “A 46-inch TFT-LCD HDTV Technology . . . ”, SID 2004International Symposium, Digest of Technical Papers, XXXV, Book II, pp.750 to 753), PVA (patterned vertical alignment, for example: Kim, SangSoo, paper 15.4: “Super PVA Sets New State-of-the-Art for LCD-TV”, SID2004 International Symposium, Digest of Technical Papers, XXXV, Book II,pp. 760 to 763), ASV (advanced super view, for example: Shigeta,Mitzuhiro and Fukuoka, Hirofumi, paper 15.2: “Development of HighQuality LCDTV”, SID 2004 International Symposium, Digest of TechnicalPapers, XXXV, Book II, pp. 754 to 757) modes, have establishedthemselves as one of the three more recent types of liquid-crystaldisplay that are currently the most important, in particular fortelevision applications, besides IPS (in-plane switching) displays (forexample: Yeo, S. D., paper 15.3: “An LC Display for the TV Application”,SID 2004 International Symposium, Digest of Technical Papers, XXXV, BookII, pp. 758 & 759) and the long-known TN (twisted nematic) displays. Thetechnologies are compared in general form, for example, in Souk, Jun,SID Seminar 2004, seminar M-6: “Recent Advances in LCD Technology”,Seminar Lecture Notes, M-6/1 to M-6/26, and Miller, Ian, SID Seminar2004, seminar M-7: “LCD-Television”, Seminar Lecture Notes, M-7/1 toM-7/32. Although the response times of modern ECB displays have alreadybeen significantly improved by addressing methods with overdrive, forexample: Kim, Hyeon Kyeong et al., paper 9.1: “A 57-in. Wide UXGATFT-LCD for HDTV Application”, SID 2004 International Symposium, Digestof Technical Papers, XXXV, Book I, pp. 106 to 109, the achievement ofvideo-compatible response times, in particular on switching of greyshades, is still a problem which has not yet been satisfactorily solved.

Industrial application of this effect in electro-optical displayelements requires LC phases, which have to satisfy a multiplicity ofrequirements. Particularly important here are chemical resistance tomoisture, air and physical influences, such as heat, infrared, visibleand ultraviolet radiation and direct and alternating electric fields.

Furthermore, industrially usable LC phases are required to have aliquid-crystalline mesophase in a suitable temperature range and lowviscosity. None of the hitherto-disclosed series of compounds having aliquid-crystalline mesophase includes a single compound which meets allthese requirements. Mixtures of two to 25, preferably three to 18,compounds are therefore generally prepared in order to obtain substanceswhich can be used as LC phases. However, it has not been possible toprepare optimum phases easily in this way since no liquid-crystalmaterials having significantly negative dielectric anisotropy andadequate long-term stability were hitherto available.

Matrix liquid-crystal displays (MLC displays) are known. Non-linearelements which can be used for individual switching of the individualpixels are, for example, active elements (i.e. transistors). The term“active matrix” is then used, where a distinction can be made betweentwo types:

-   1. MOS (metal oxide semiconductor) transistors on a silicon wafer as    substrate-   2. thin-film transistors (TFTs) on a glass plate as substrate.

In the case of type 1, the electro-optical effect used is usuallydynamic scattering or the guest-host effect. The use of single-crystalsilicon as substrate material restricts the display size, since evenmodular assembly of various part-displays results in problems at thejoints.

In the case of the more promising type 2, which is preferred, theelectro-optical effect used is usually the TN effect.

A distinction is made between two technologies: TFTs comprising compoundsemiconductors, such as, for example, CdSe, or TFTs based onpolycrystalline or amorphous silicon. The latter technology is beingworked on intensively worldwide.

The TFT matrix is applied to the inside of one glass plate of thedisplay, while the other glass plate carries the transparentcounterelectrode on its inside. Compared with the size of the pixelelectrode, the TFT is very small and has virtually no adverse effect onthe image. This technology can also be extended to fully colour-capabledisplays, in which a mosaic of red, green and blue filters is arrangedin such a way that a filter element is opposite each switchable pixel.

The term MLC displays here encompasses any matrix display withintegrated non-linear elements, i.e. besides the active matrix, alsodisplays with passive elements, such as varistors or diodes(MIM=metal-insulator-metal).

MLC displays of this type are particularly suitable for TV applications(for example pocket TVs) or for high-information displays in automobileor aircraft construction. Besides problems regarding the angledependence of the contrast and the response times, difficulties alsoarise in MLC displays due to insufficiently high specific resistance ofthe liquid-crystal mixtures [TOGASHI, S., SEKIGUCHI, K., TANABE, H.,YAMAMOTO, E., SORIMACHI, K., TAJIMA, E., WATANABE, H., SHIMIZU, H.,Proc. Eurodisplay 84, September 1984: A 210-288 Matrix LCD Controlled byDouble Stage Diode Rings, pp. 141 ff., Paris; STROMER, M., Proc.Eurodisplay 84, September 1984: Design of Thin Film Transistors forMatrix Addressing of Television Liquid Crystal Displays, pp. 145 ff.,Paris]. With decreasing resistance, the contrast of an MLC displaydeteriorates. Since the specific resistance of the liquid-crystalmixture generally drops over the life of an MLC display owing tointeraction with the inside surfaces of the display, a high (initial)resistance is very important for displays that have to have acceptableresistance values over a long operating period.

There is still a great demand for MLC displays having very high specificresistance at the same time as a large working-temperature range, shortresponse times and a low threshold voltage, with the aid of whichvarious grey shades can be generated.

The disadvantage of the MLC-TN displays frequently used is due to theircomparatively low contrast, the relatively high viewing-angle dependenceand the difficulty of generating grey shades in these displays.

VA displays have significantly better viewing-angle dependencies and aretherefore principally used for televisions and monitors. However, therecontinues to be a need to improve the response times here. However,properties such as, for example, the low-temperature stability and thereliability must not be impaired at the same time.

The invention is based on an object, for example, of providingliquid-crystal mixtures, in particular for monitor and TV applications,based on the ECB effect or on the IPS or FFS effect, which do not havethe disadvantages indicated above, or only do so to a reduced extent. Inparticular, it must be ensured for monitors and televisions that theyalso work at extremely high and extremely low temperatures and at thesame time have short response times and at the same time have animproved reliability behaviour, in particular exhibit no orsignificantly reduced image sticking after long operating times. Otherobjectives are described or are apparent from the description herein.

Neutral bicyclic compounds having a terminal double bond, such as, forexample, the compound of the formula

are frequently employed if liquid-crystalline mixtures having fastresponse times are required. However, compounds of this type have thedisadvantage that, in some applications, they lead to an impairment ofthe display properties, such as, for example, increased occurrence ofimage sticking.

Compounds of the formula

in which n and m each, independently of one another, denote 1, 2, 3, 4,5 or 6, have the disadvantage that they are generally not soluble inhigh concentrations in liquid-crystal mixtures, which in turn has anadverse effect on the response time.

An object of the present invention is therefore to find liquid-crystalmixtures which on the one hand have fast response times and on the otherhand have good reliability due to the use of neutral compounds whichhave good solubility in liquid-crystal mixtures.

Surprisingly, it is possible to improve the rotational viscosity valuesand thus the response times if one or more, preferably at least one ortwo, compounds of the general formulae IA to IH are used inliquid-crystal mixtures, in particular in LC mixtures having negativedielectric anisotropy Δε, preferably for VA, IPS and FFS displays. Withthe aid of the compounds of the formulae IA to IH, which contain anon-terminal double bond, it is possible to prepare liquid-crystalmixtures, preferably VA, PS-VA, PSA, IPS and FFS mixtures, which haveshort response times, at the same time good phase properties and goodlow-temperature behaviour.

The liquid-crystalline mixtures according to the invention aredistinguished, for example, by a very good ratio of the rotationalviscosities and the elastic constants, preferably K₃. In particular, thereliability is improved. This includes, in particular, ODF mura and alsointeractions with peripheral materials, such as, for example, theadhesive frame, which is frequently also called “corner mura”.Furthermore, image sticking is minimised.

The invention thus relates to a liquid-crystalline medium whichcomprises at least one compound of the formula IA, IB, IC, ID, IE, IF,IG and/or IH.

The mixtures according to the invention preferably exhibit very broadnematic phase ranges with clearing points ≥65° C., preferably ≥70° C.,in particular ≥75° C., very favourable values of the capacitivethreshold, relatively high values of the holding ratio and at the sametime very good low-temperature stabilities at −20° C. and −30° C., aswell as very low rotational viscosity values and short response times.The mixtures according to the invention are furthermore distinguished bythe fact that, in addition to the improvement in the rotationalviscosity γ₁, relatively high values of the elastic constants K₃ forimproving the response times can be observed. The compounds of theformulae IA to IH are suitable, in particular, for the preparation ofliquid-crystalline mixtures having a negative Δε.

Some preferred embodiments of the mixtures according to the inventionare indicated below.

In the compounds of the formulae IA to IH, Z¹, independently of oneanother, preferably denotes a single bond.

Preferred compounds of the formulae IA to IH are shown below:

The compounds of the formulae IA to IH are preferably prepared asfollows:

R′=C₃H₇, C₄H₉, cyclopropyl, cyclobutyl or cyclopentyl

Particularly preferred compounds are prepared as follows:

The media according to the invention preferably comprise one or twocompounds from the group of the compounds of the formulae IA to IH.

The compounds of the formulae IA to IH are preferably employed in theliquid-crystalline medium in amounts of 1-50% by weight, preferably5-50% by weight and very particularly preferably 10-50% by weight.

Preferred embodiments of the liquid-crystalline medium according to theinvention are indicated below:

-   a) Liquid-crystalline medium which additionally comprises one or    more compounds selected from the group of the compounds of the    formulae IIA, IIB and IIC,

-   -   in which    -   R^(2A), R^(2B) and R^(2C) each, independently of one another,        denote H, an alkyl or alkenyl radical having up to 15 C atoms        which is unsubstituted, monosubstituted by CN or CF₃ or at least        monosubstituted by halogen, where, in addition, one or more CH₂        groups in these radicals may be replaced by —O—, —S—,

—C≡C—, —CF₂O—, —OCF₂—, —OC—O— or —O—CO— in such a way that O atoms arenot linked directly to one another, a cyclopropyl ring, cyclobutyl ringor cyclopentyl ring,

-   -   L¹⁻⁴ each, independently of one another, denote F, C, CF₃ or        CHF₂,    -   L⁵ denotes H or CH₃,    -   Z² and Z^(2′) each, independently of one another, denote a        single bond, —CH₂CH₂—, —CH═CH—, —CF₂O—, —OCF₂—, —CH₂O—, —OCH₂—,        —COO—, —OCO—, —C₂F₄—, —CF═CF—, —C≡C—, or —CH═CHCH₂O—,    -   p denotes 0, 1 or 2, where, if p=0, Z² denotes a single bond,    -   q denotes 0 or 1, and    -   v denotes 1 to 6.    -   In the compounds of the formulae IIA and IIB, Z² may have        identical or different meanings. In the compounds of the formula        IIB, Z² and Z^(Z) may have identical or different meanings.    -   In the compounds of the formulae IIA, IIB and IIC, R^(2A),        R^(2B) and R^(2C) each preferably denote alkyl having 1-6 C        atoms, in particular CH₃, C₂H₅, n-C₃H₇, n-C₄H₉, n-C₅H₁₁,        furthermore alkenyl, in particular CH₂═CH, CH₃CH═CH, C₂H₅CH═CH,        C₃H₇CH═CH    -   In the compounds of the formulae IIA and IIB, L¹, L², L³ and L⁴        preferably denote L¹=L²=F and L³=L⁴=F, furthermore L¹=F and        L²=Cl, L¹=Cl and L²=F, L³=F and L⁴=Cl, L³=Cl and L⁴=F. Z² and        Z^(2′) in the formulae IIA and IIB preferably each,        independently of one another, denote a single bond, furthermore        a —C₂H₄— bridge.    -   If in the formula IIB Z²=—C₂H₄— or —CH₂O—, Z^(2′) is preferably        a single bond or, if Z^(2′)=—C₂H₄— or —CH₂O—, Z² is preferably a        single bond. In the compounds of the formulae IIA and IIB,        (O)C_(v)H_(2v+1) preferably denotes OC_(v)H_(2v+1), furthermore        C_(v)H_(2v+1). In the compounds of the formula IIC,        (O)C_(v)H_(2v+1) preferably denotes C_(v)H_(2v+1).    -   In the compounds of the formula IIC, L³ and L⁴ preferably each        denote F.    -   In the compounds of the formulae IIA and IIB, L⁵ denotes H or        CH₃, preferably H.    -   Preferred compounds of the formulae IIA, IIB and IIC are        indicated below:

-   -   in which alkyl and alkyl* each, independently of one another,        denote a straight-chain alkyl radical having 1-6 C atoms and        alkenyl and alkenyl* each, independently of one another, denote        a straight-chain alkenyl radical having 2-6 C atoms. Alkenyl        preferably denotes CH₂═CH, CH₃CH═CH or CH₂═CHC₂H₄.    -   Particularly preferred mixtures according to the invention        comprise one or more compounds of the formulae IIA-2, IIA-8,        IIA-14, IIA-26, II-28, IIA-33, IIA-39, IIA-45, IIA-46, IIA-47,        IIA-50, IIB-2, IIB-11, IIB-16, IIB-17 or IIC-1.    -   The proportion of compounds of the formulae IIA and/or IIB in        the mixture as a whole is preferably at least 20% by weight.    -   Particularly preferred media according to the invention comprise        at least one compound of the formula IIC-1,

-   -   in which alkyl and alkyl* have the meanings indicated above,        preferably in amounts of >3% by weight, in particular >5% by        weight and particularly preferably 5-25% by weight.

-   b) Liquid-crystalline medium which additionally comprises one or    more compounds of the formula III,

-   -   in which    -   R³¹ and R³² each, independently of one another, denote a        straight-chain alkyl, alkoxy, alkenyl, alkoxyalkyl or alkenyloxy        radical having up to 12 C atoms, and

-   -    denotes

-   -   Z³ denotes a single bond, —CH₂CH₂—, —CH═CH—, —CF₂O—, —OCF₂—,        —CH₂O—, —OCH₂—, —COO—, —OCO—, —C₂F₄—, —C₄H₈—, —C≡C—, —CF═CF—.    -   Preferred compounds of the formula III are indicated below:

-   -   in which    -   alkyl and alkyl* each, independently of one another, denote a        straight-chain alkyl radical having 1-6 C atoms.    -   alkenyl and alkenyl* each, independently of one another, denote        a straight-chain alkenyl radical having 2-6 C atoms.

-   c) Liquid-crystalline medium which additionally comprises one or    more tetracyclic compounds of the formulae

-   -   in which    -   R⁷⁻¹⁰ each, independently of one another, denote H, an alkyl or        alkenyl radical having up to 15 C atoms which is unsubstituted,        monosubstituted by CN or CF₃ or at least monosubstituted by        halogen, where, in addition, one or more CH₂ groups in these        radicals may be replaced by —O—, —S—,

-   -    —C≡C—, —CF₂O—, —OCF₂—, —OC—O— or —O—CO— in such a way that O        atoms are not linked directly to one another, a cyclopropyl        ring, cyclobutyl ring or cyclopentyl ring, and    -   w and x each, independently of one another, denote 1 to 6.    -   Particular preference is given to mixtures comprising at least        one compound of the formula V-9 and/or of the formula V-10.

-   d) Liquid-crystalline medium which additionally comprises one or    more compounds of the formulae Y-1 to Y-6,

-   -   in which R¹⁴-R¹⁹ each, independently of one another, denote an        alkyl or alkoxy radical having 1-6 C atoms; z and m each,        independently of one another, denote 1-6; x denotes 0, 1, 2 or        3.    -   The medium according to the invention particularly preferably        comprises one or more compounds of the formulae Y-1 to Y-6,        preferably in amounts of ≥5% by weight.

-   e) Liquid-crystalline medium additionally comprising one or more    fluorinated terphenyls of the formulae T-1 to T-22,

-   -   in which    -   R denotes a straight-chain alkyl or alkoxy radical having 1-7 C        atoms, and m=0, 1, 2, 3, 4, 5 or 6 and n denotes 0, 1, 2, 3 or        4.    -   R preferably denotes methyl, ethyl, propyl, butyl, pentyl,        hexyl, methoxy, ethoxy, propoxy, butoxy, or pentoxy.    -   The medium according to the invention preferably comprises the        terphenyls of the formulae T-1 to T-22 in amounts of 2-30% by        weight, in particular 5-20% by weight.    -   Particular preference is given to compounds of the formulae T-1,        T-2, T-5, T-20 and T-21. In these compounds, R preferably        denotes alkyl, furthermore alkoxy, each having 1-6 C atoms. In        the compounds of the formula T-20, R preferably denotes alkyl or        alkenyl, in particular alkyl. In the compound of the formula        T-21, R preferably denotes alkyl.    -   The terphenyls are preferably employed in the mixtures according        to the invention if the Δn value of the mixture is to be ≥0.1.        Preferred mixtures comprise 2-20% by weight of one or more        terphenyl compounds selected from the group of the compounds T-1        to T-22.

-   f) Liquid-crystalline medium additionally comprising one or more    biphenyls of the formulae B-1 to B-3,

-   -   in which    -   alkyl and alkyl* each, independently of one another, denote a        straight-chain alkyl radical having 1-6 C atoms, and    -   alkenyl and alkenyl* each, independently of one another, denote        a straight-chain alkenyl radical having 2-6 C atoms.    -   The proportion of the biphenyls of the formulae B-1 to B-3 in        the mixture as a whole is preferably at least 3% by weight, in        particular ≥5% by weight.    -   Of the compounds of the formulae B-1 to B-3, the compounds of        the formulae B-1 and B-2 are particularly preferred.    -   Particularly preferred biphenyls are

-   -   in which alkyl* denotes an alkyl radical having 1-6 C atoms. The        medium according to the invention particularly preferably        comprises one or more compounds of the formulae B-1a and/or        B-2c.    -   Preferred compounds of the formula B-1a are, in particular, the        compounds of the formulae

-   g) Liquid-crystalline medium additionally comprising at least one    compound of the formulae Z-1 to Z-7,

-   -   in which R denotes FI, an alkyl or alkenyl radical having up to        15 C atoms which is unsubstituted, monosubstituted by CN or CF₃        or at least monosubstituted by halogen, where, in addition, one        or more CH₂ groups in these radicals may be replaced by —O—,        —S—,

-   -    —C≡C—, —CF₂O—, —OCF₂—, —OC—O— or —O—CO— in such a way that O        atoms are not linked directly to one another, a cyclopropyl        ring, cyclobutyl ring or cyclopentyl ring, and alkyl denotes an        alkyl radical having 1-6 C atoms.

-   h) Liquid-crystalline medium additionally comprising at least one    compound of the formulae O-1 to O-17,

-   -   in which R¹ and R² each, independently of one another, denote H,        an alkyl or alkenyl radical having up to 15 C atoms which is        unsubstituted, monosubstituted by CN or CF₃ or at least        monosubstituted by halogen, where, in addition, one or more CH₂        groups in these radicals may be replaced by —O—, —S—,

-   -    —C≡C—, —CF₂O—, —OCF₂—, —OC—O— or —O—CO— in such a way that O        atoms are not linked directly to one another, a cyclopropyl        ring, cyclobutyl ring or cyclopentyl ring. R¹ and R² preferably        each, independently of one another, denote straight-chain alkyl        or alkenyl, where the compounds of the formula O-17 are not        identical with the compounds of the formulae IA and IB.    -   Preferred media comprise one or more compounds of the formulae        O-1, O-3, O-4, O-6, O-7, O-10, O-11, O-12, O-14, O-15, O-16        and/or O-17.    -   Mixtures according to the invention very particularly preferably        comprise the compounds of the formula O-10, O-12, O-16 and/or        O-17, in particular in amounts of 5-30% by weight.    -   Preferred compounds of the formula O-17 are selected from the        group of the compounds of the formulae

-   -   Preference is furthermore given to compounds of the formula O-17        which contain a non-terminal double bond in the alkenyl side        chain:

-   -   The proportion of compounds of the formula O-17 in the mixture        as a whole is preferably at least 5% by weight.

-   i) Liquid-crystalline medium additionally comprising at least one    compound of the formula

-   -   preferably in total amounts of ≥5% by weight, in particular ≥10%        by weight.    -   Preference is furthermore given to mixtures according to the        invention comprising the compound (acronym: CC-3-V1)

-   -   preferably in amounts of 2-15% by weight.    -   Preferred mixtures comprise 5-60% by weight, preferably 10-55%        by weight, in particular 20-50% by weight, of the compound of        the formula (acronym: CC-3-V)

-   -   Preference is furthermore given to mixtures which comprise a        compound of the formula (acronym: CC-3-V)

-   -   and a compound of the formula (acronym: CC-3-V1)

-   -   preferably in amounts of 10-60% by weight.

-   j) Liquid-crystalline medium additionally comprising at least one    compound of the formula O-10 and at least one compound of the    formula O-17 selected from the group of the following compounds:

-   -   The medium according to the invention particularly preferably        comprises the tricyclic compounds of the formula O-10a and/or of        the formula O-10b in combination with one or more bicyclic        compounds of the formulae O-17a to O-17d. The total proportion        of the compounds of the formulae O-10a and/or O-10b in        combination with one or more compounds selected from the        bicyclic compounds of the formulae O-17a to O-17d is 5-40%, very        particularly preferably 15-35%.    -   Very particularly preferred mixtures comprise compounds O-10a        and O-17a:

-   -   Compounds O-10a and O-17a are preferably present in the mixture        in a concentration of 15-35%, particularly preferably 15-25% and        especially preferably 18-22%, based on the mixture as a whole.    -   Very particularly preferred mixtures comprise the compounds        O-10b and O-17a:

-   -   The compounds O-10b and O-17a are preferably present in the        mixture in a concentration of 15-35%, particularly preferably        15-25% and especially preferably 18-22%, based on the mixture as        a whole.    -   Very particularly preferred mixtures comprise the following        three compounds:

-   -   The compounds O-10a, O-10b and O-17a are preferably present in        the mixture in a concentration of 15-35%, particularly        preferably 15-25% and especially preferably 18-22%, based on the        mixture as a whole.    -   Preferred mixtures comprise at least one compound selected from        the group of the compounds

-   -   in which R¹ and R² have the meanings indicated above. In the        compounds O-6, O-7 and O-17, R¹ preferably denotes alkyl or        alkenyl having 1-6 or 2-6 C atoms respectively, and R²        preferably denotes alkenyl having 2-6 C atoms. In the compounds        of the formula O-10, R¹ preferably denotes alkyl or alkenyl        having 1-6 or 2-6 C atoms respectively, and R² preferably        denotes alkyl having 1-6 C atoms.    -   Preferred mixtures comprise at least one compound selected from        the group of the compounds of the formulae O-6a, O-6b, O-7a,        O-7b, O-17e, O-17f, O-17g and O-17h:

-   -   in which alkyl denotes an alkyl radical having 1-6 C atoms.    -   The compounds of the formulae O-6, O-7 and O-17e-h are        preferably present in the mixtures according to the invention in        amounts of 1 40% by weight, in particular 2-35% by weight and        very particularly preferably 2-30% by weight.

-   k) Preferred liquid-crystalline media according to the invention    comprise one or more substances which contain a tetrahydronaphthyl    or naphthyl unit, such as, for example, the compounds of the    formulae N-1 to N-5,

-   -   in which R^(1N) and R^(2N) each, independently of one another,        denote H, an alkyl or alkenyl radical having up to 15 C atoms        which is unsubstituted, monosubstituted by CN or CF₃ or at least        monosubstituted by halogen, where, in addition, one or more CH₂        groups in these radicals may be replaced by —O—, —S—,

-   -    —C≡C—, —CF₂O—, —OCF₂—, —OC—O— or —O—CO— in such a way that O        atoms are not linked directly to one another, a cyclopropyl        ring, cyclobutyl ring or cyclopentyl ring, preferably denote        straight-chain alkyl, straight-chain alkoxy or straight-chain        alkenyl, and    -   Z¹ and Z² each, independently of one another, denote —C₂H₄—,        —CH═CH—, —(CH₂)₄—, —(CH₂)₃O—, —O(CH₂)₃—, —CH═CHCH₂CH₂—,        —CH₂CH₂CH═CH—, —CH₂O—, —OCH₂—, —COO—, —OCO—, —C₂F₄—, —CF═CF—,        —CF═CH—, —CH═CF—, —C≡C—, —CF₂O—, —OCF₂—, —CH₂— or a single bond.

-   l) Preferred mixtures comprise one or more compounds selected from    the group of the compounds of the formulae BC, CR, PH-1, PH-2, BF1,    BF-2, BS-1 and BS-2,

-   -   in which    -   R^(B1), R^(B2), R^(CR1), R^(CR2), R¹, R² each, independently of        one another, denote H, an alkyl or alkenyl radical having up to        15 C atoms which is unsubstituted, monosubstituted by CN or CF₃        or at least monosubstituted by halogen, where, in addition, one        or more CH₂ groups in these radicals may be replaced by —O—,        —S—,

-   -    —C≡C—, —CF₂O—, —OCF₂—, —OC—O— or —O—CO— in such a way that O        atoms are not linked directly to one another, a cyclopropyl        ring, cyclobutyl ring or cyclopentyl ring, c is 0, 1 or 2 and d        is 1 or 2. R¹ and R² preferably, independently of one another,        denote alkyl, alkoxy, alkenyl or alkenyloxy having 1 or 2 to 6 C        atoms respectively.    -   The mixtures according to the invention preferably comprise the        compounds of the formulae BC, CR, PH-1, PH-2 and/or BF in        amounts of 3 to 20% by weight, in particular in amounts of 3 to        15% by weight.    -   Particularly preferred compounds of the formulae BC and CR, are        the compounds BF-1, BF-2, BS-1 and BS-2,

-   -   in which    -   alkyl and alkyl* each, independently of one another, denote a        straight-chain alkyl radical having 1-6 C atoms,    -   alkenyl and alkenyl* each, independently of one another, denote        a straight-chain alkenyl radical having 2-6 C atoms, and    -   (O)alkyl and (O)alkyl* denote alkyl or Oalkyl and alkyl* or        Oalkyl* respectively.    -   Very particular preference is given to mixtures comprising one,        two or three compounds of the formula BC-2, BF-1a and/or BS-1a.

-   m) Preferred mixtures comprise one or more indane compounds of the    formula In,

-   -   In    -   in which    -   R¹¹, R¹², R¹³ each, independently of one another, denote a        straight-chain alkyl, alkoxy, alkoxyalkyl or alkenyl radical        having 1-6 C atoms,    -   R¹² and R¹³ additionally denote halogen, preferably F,

-   -    denotes

-   -   i denotes 0, 1 or 2.    -   Preferred compounds of the formula In are the compounds of the        formulae In-1 to In-16 indicated below:

-   -   Particular preference is given to the compounds of the formulae        In-1, In-2, In-3 and In-4.    -   The compounds of the formula In and the sub-formulae In-1 to        In-16 are preferably employed in the mixtures according to the        invention in concentrations ≥5% by weight, in particular 5-30%        by weight and very particularly preferably 5-25% by weight.

-   n) Preferred mixtures additionally comprise one or more compounds of    the formulae L-1 to L-11,

-   -   in which    -   R, R¹ and R² each, independently of one another, denote H, an        alkyl or alkenyl radical having up to 15 C atoms which is        unsubstituted, monosubstituted by CN or CF₃ or at least        monosubstituted by halogen, where, in addition, one or more CH₂        groups in these radicals may be replaced by —O—, —S—,

-   -    —C≡C—, —CF₂O—, —OCF₂—, —OC—O— or —O—CO— in such a way that O        atoms are not linked directly to one another, a cyclopropyl        ring, cyclobutyl ring or cyclopentyl ring, and alkyl denotes an        alkyl radical having 1-6 C atoms, s denotes 1 or 2.    -   Particular preference is given to the compounds of the formulae        L-1 and L-4, in particular L-4.    -   The compounds of the formulae L-1 to L-11 are preferably        employed in concentrations of 5-50% by weight, in particular        5-40% by weight and very particularly preferably 10-40% by        weight.

Particularly preferred mixture concepts are indicated below: (theacronyms used are explained in Table A). n and m here each,independently of one another, denote 1-15, preferably 1-6.

The mixtures according to the invention preferably comprise

-   -   CPY-n-Om, in particular CPY-2-O2, CPY-3-O2 and/or CPY-5-O2,        preferably in concentrations >5%, in particular 10-30%, based on        the mixture as a whole,        and/or    -   CY-n-Om, preferably CY-3-O2, CY-3-O4, CY-5-O2 and/or CY-5-O4,        preferably in concentrations >5%, in particular 15-50%, based on        the mixture as a whole,        and/or    -   CCY-n-Om, preferably CCY-4-O2, CCY-3-O2, CCY-3-O3, CCY-3-O1        and/or CCY-5-O2, preferably in concentrations >5%, in particular        10-30%, based on the mixture as a whole,        and/or    -   CLY-n-Om, preferably CLY-2-O4, CLY-3-O2 and/or CLY-3-O3,        preferably in concentrations >5%, in particular 10-30%, based on        the mixture as a whole,        and/or    -   CK-n-F, preferably CK-3-F, CK-4-F and/or CK-5-F, preferably >5%,        in particular 5-25%, based on the mixture as a whole.

Preference is furthermore given to mixtures according to the inventionwhich comprise the following mixture concepts: (n and m each,independently of one another, denote 1-6.)

-   -   CPY-n-Om and CY-n-Om, preferably in concentrations of 10-80%,        based on the mixture as a whole,        and/or    -   CPY-n-Om and CK-n-F, preferably in concentrations of 10-70%,        based on the mixture as a whole,        and/or    -   Y-nO-Om, preferably Y-40-04, in particular in concentrations of        2-20% by weight, based on the mixture as a whole,        and/or    -   CPY-n-Om and PY-n-Om, preferably CPY-2-O2 and/or CPY-3-O2 and        PY-3-O2, preferably in concentrations of 10-45%, based on the        mixture as a whole,        and/or    -   CPY-n-Om and CLY-n-Om, preferably in concentrations of 10-80%,        based on the mixture as a whole,        and/or    -   CCVC-n-V, preferably CCVC-3-V, preferably in concentrations of 2        10%, based on the mixture as a whole,        and/or    -   CCC-n-V, preferably CCC-2-V and/or CCC-3-V, preferably in        concentrations of 2-10%, based on the mixture as a whole,        and/or    -   CC-1V-V2, preferably in concentrations of 5-50%, based on the        mixture as a whole,        and/or    -   CC-2V-V2, preferably in concentrations of 5-50%, based on the        mixture as a whole.

Preferred mixture concepts according to the invention comprise one ofthe following combinations of liquid-crystalline compounds (n, m=1, 2,3, 4, 5 or 6, unless defined otherwise):

-   -   CC-4-V1+CCH-nm+CY-3-O2    -   CC-4-V1+CCH-nm+CY-3-O2+CCY-3-O2    -   CC-4-V1+CCOY-n-O2, where n=2, 3 or 4, for example    -   CC-4-V1+CCOY-V-Om, where m=2 or 3, for example    -   CC-4-V1+CCY-1V-O2    -   CC-4-V1+CCY-V-O1    -   CC-4-V1+CCY-V-O2    -   CC-4-V1+CCY-V-O4    -   CC-4-V1+CCY-V2-O2    -   CC-4-V1+PY-3-O2    -   CC-4-V1+COY-n-O2, where n=2 or 3    -   CC-4-V1+COY-1V-O2    -   CC-4-V1+COY-1V-O1    -   CC-4-V1+CPY-V-Om, where m=2 or 4    -   CC-4-V1+CY-V-Om, where m=2 or 4    -   CC-4-V1+PY-V2-O2    -   CC-4-V1+CC-3-V1    -   CC-3-V2+CCH-nm+CY-3-O2    -   CC-3-V2+CCH-nm+CY-3-O2+CCY-3-O2    -   CC-3-V2+CCOY-n-O2, where n=2, 3 or 4    -   CC-3-V2+CCOY-V-Om, where m=2 or 3    -   CC-3-V2+CCY-1V-O2    -   CC-3-V2+CCY-V-O1    -   CC-3-V2+CCY-V-O2    -   CC-3-V2+CCY-V-O4    -   CC-3-V2+CCY-V2-O2    -   CC-3-V2+PY-3-O2    -   CC-3-V2+COY-n-O2, where n=2 or 3    -   CC-3-V2+COY-1V-O2    -   CC-3-V2+COY-1V-O1    -   CC-3-V2+CPY-V-Om, where m=2 or 4    -   CC-3-V2+CY-V-Om, where m=2 or 4    -   CC-3-V2+PY-V2-O2    -   CC-3-V2+CC-3-V1.

The medium according to the invention preferably comprises more than onecompound of the formula CC-n-Vm, where n=2-6 and m=1-6. The compounds ofthe formula CC-n-Vm include, in particular, compounds of the formulaeCC-4-V1, CC-3-V1 and CC-3-V2. The total concentration of compounds ofthe formula CC-n-Vm in the mixture according to the invention ispreferably 5-45% by weight, in particular 15-35%.

In a preferred embodiment, the medium according to the invention,besides one or more compounds of the formulae IA to IH, comprises atleast one compound selected from the group of the compounds of theformulae T-20, T-21, IIA-26, IIA-28, IIIA-33, IIA-39, IIA-50, IIA-51,IIB-16, BF-1, BF-2, V-10, 0-6a, L-4 and CC-3-V.

The invention furthermore relates to an electro-optical display havingactive-matrix addressing based on the ECB, VA, PS-VA, PA-VA, IPS,PS-IPS, SA-VA, UB-FFS, FFS or PS-FFS effect, characterised in that itcontains, as dielectric, a liquid-crystalline medium as described above.

The liquid-crystalline medium according to the invention preferably hasa nematic phase from ≤−20° C. to ≥70° C., particularly preferably from≤−30° C. to ≥80° C., very particularly preferably from ≤−40° C. to ≥90°C.

The expression “have a nematic phase” here means on the one hand that nosmectic phase and no crystallisation are observed at low temperatures atthe corresponding temperature and on the other hand that clearing stilldoes not occur on heating from the nematic phase. The investigation atlow temperatures is carried out in a flow viscometer at thecorresponding temperature and checked by storage in test cells having alayer thickness corresponding to the electro-optical use for at least100 hours. If the storage stability at a temperature of −20° C. in acorresponding test cell is 1000 h or more, the medium is referred to asstable at this temperature. At temperatures of −30° C. and −40° C., thecorresponding times are 500 h and 250 h respectively. At hightemperatures, the clearing point is measured by conventional methods incapillaries.

The liquid-crystal mixture preferably has a nematic phase range of atleast 60 K and a flow viscosity v₂₀ of at most 30 mm²·s⁻¹ at 20° C.

The values of the birefringence Δn in the liquid-crystal mixture aregenerally between 0.07 and 0.16, preferably between 0.08 and 0.13. Theliquid-crystal mixture according to the invention has a Δε of −0.5 to−8.0, in particular −2.5 to −6.0, where Δε denotes the dielectricanisotropy. The rotational viscosity γ₁ at 20° C. is preferably ≤150mPa·s, in particular ≤120 mPa s.

The liquid-crystal media according to the invention have relatively lowvalues for the threshold voltage (V₀). They are preferably in the rangefrom 1.7 V to 3.0 V, particularly preferably ≤2.5 V and veryparticularly preferably ≤2.3 V.

For the present invention, the term “threshold voltage” relates to thecapacitive threshold (V₀), also known as the Freedericks threshold,unless explicitly indicated otherwise.

In addition, the liquid-crystal media according to the invention havehigh values for the voltage holding ratio in liquid-crystal cells.

In general, liquid-crystal media having a low addressing voltage orthreshold voltage exhibit a lower voltage holding ratio than thosehaving a higher addressing voltage or threshold voltage and vice versa.

For the present invention, the term “dielectrically positive compounds”denotes compounds having a Δε>1.5, the term “dielectrically neutralcompounds” denotes those having −1.5≤Δε≤1.5 and the term “dielectricallynegative compounds” denotes those having Δε<−1.5. The dielectricanisotropy of the compounds is determined here by dissolving 10% of thecompounds in a liquid-crystalline host and determining the capacitanceof the resultant mixture in at least one test cell in each case having alayer thickness of 20 μm with homeotropic and with homogeneous surfacealignment at 1 kHz. The measurement voltage is typically 0.5 V to 1.0 V,but is always lower than the capacitive threshold of the respectiveliquid-crystal mixture investigated.

All temperature values indicated for the present invention are in ° C.

The mixtures according to the invention are suitable for all VA-TFTapplications, such as, for example, VAN, MVA, (S)-PVA, ASV, PSA (polymersustained VA) and PS-VA (polymer stabilized VA), SA-VA (surfacealignment VA), SS-VA (surface stablised VA). They are furthermoresuitable for IPS (in-plane switching) and FFS (fringe field switching)applications having negative Δε.

The nematic liquid-crystal mixtures in the displays according to theinvention may comprise two components A and B, which themselves consistof one or more individual compounds.

Component A has significantly negative dielectric anisotropy and givesthe nematic phase a dielectric anisotropy of ≤−0.5. Besides one or morecompounds of the formulae IA to IH, it preferably comprises thecompounds of the formulae IIA, IIB and/or IIC, furthermore one or morecompounds of the formula O-17.

The proportion of component A is preferably between 45 and 100%, inparticular between 60 and 100%.

For component A, one (or more) individual compound(s) which has (have) avalue of Δε≤−0.8 is (are) preferably selected. This value would be morenegative, the smaller the proportion A in the mixture as a whole.

Component B has pronounced nematogeneity and a flow viscosity of notgreater than 30 mm²·s⁻¹, preferably not greater than 25 mm²·s⁻¹, at 20°C.

A multiplicity of suitable materials is known to the person skilled inthe art from the literature for this purpose. Particular preference isgiven to compounds of the formula O-17.

Particularly preferred individual compounds in component B are extremelylow-viscosity nematic liquid crystals having a flow viscosity of notgreater than 18 mm²·s⁻¹, preferably not greater than 12 mm²·s⁻¹, at 20°C.

Component B is monotropically or enantiotropically nematic, has nosmectic phases and is able to prevent the occurrence of smectic phasesdown to very low temperatures in liquid-crystal mixtures. For example,if various materials of high nematogeneity are added to a smecticliquid-crystal mixture, the nematogeneity of these materials can becompared through the degree of suppression of smectic phases that isachieved.

The mixture may optionally also comprise a component C, comprisingcompounds having a dielectric anisotropy of Δε≥1.5. These so-calledpositive compounds are generally present in a mixture of negativedielectric anisotropy in amounts of ≤20% by weight, based on the mixtureas a whole.

If the mixture according to the invention comprises one or morecompounds having a dielectric anisotropy of Δε≥1.5, these are preferablyone or more compounds selected from the group of the compounds of theformulae P-1 to P-5,

in which

-   R denotes straight-chain alkyl, alkoxy or alkenyl, each having 1 or    2 to 6 C atoms respectively or a cycloalkyl ring having 3, 4 or 5 C    atoms, and-   X denotes F, Cl, CF₃, OCF₃, OCHFCF₃ or CCF₂CHFCF₃, preferably F or    OCF₃.

The compounds of the formulae P-1 to P-5 are preferably employed in themixtures according to the invention in concentrations of 1-15%, inparticular 2-10%.

Particular preference is given to the compound of the formula

which is preferably employed in the mixtures according to the inventionin amounts of 2-15%.

In addition, these liquid-crystal phases may also comprise more than 18components, preferably 18 to 25 components.

Besides one or more compounds of the formulae IA to IH, the phasespreferably comprise 4 to 15, in particular 5 to 12, and particularlypreferably <10, compounds of the formulae IIA, IIB and/or IIC andoptionally one or more compounds of the formula O-17.

Besides compounds of the formulae IA to IH and the compounds of theformulae IIA, IIB and/or IIC and optionally O-17, other constituents mayalso be present, for example in an amount of up to 45% of the mixture asa whole, but preferably up to 35%, in particular up to 10%.

The other constituents are preferably selected from nematic ornematogenic substances, in particular known substances, from the classesof the azoxybenzenes, benzylideneanilines, biphenyls, terphenyls, phenylor cyclohexyl benzoates, phenyl or cyclohexyl cyclohexanecarboxylates,phenylcyclohexanes, cyclohexylbiphenyls, cyclohexylcyclohexanes,cyclohexylnaphthalenes, 1,4-biscyclohexylbiphenyls orcyclohexylpyrimidines, phenyl- or cyclohexyldioxanes, optionallyhalogenated stilbenes, benzyl phenyl ethers, tolans and substitutedcinnamic acid esters.

The most important compounds which are suitable as constituents ofliquid-crystal phases of this type can be characterised by the formulaIV

R²⁰-L-G-E-R²¹  IV

in which L and E each denote a carbo- or heterocyclic ring system fromthe group formed by 1,4-disubstituted benzene and cyclohexane rings,4,4′-disubstituted biphenyl, phenylcyclohexane and cyclohexylcyclohexanesystems, 2,5-disubstituted pyrimidine and 1,3-dioxane rings,2,6-disubstituted naphthalene, di- and tetrahydronaphthalene,quinazoline and tetrahydroquinazoline,

-   G denotes —CH═CH— —N(O)═N—    -   —CH═CQ- —CH═N(O)—    -   —C≡C— —CH₂—CH₂—    -   —CO—O— —CH₂—O—    -   —CO—S— —CH₂—S—    -   —CH═N— —COO-Phe-COO—    -   —CF₂O— —CF═CF—    -   —OCF₂— —OCH₂—    -   —(CH₂)₄— —(CH₂)₃O—        or a C—C single bond, Q denotes halogen, preferably chlorine, or        —CN, and R²⁰ and R²¹ each denote alkyl, alkenyl, alkoxy,        alkoxyalkyl or alkoxycarbonyloxy having up to 18, preferably up        to 8, carbon atoms, or one of these radicals alternatively        denotes CN, NC, NO₂, NCS, CF₃, SF₅, OCF₃, F, Cl or Br.

In most of these compounds, R²⁰ and R²¹ are different from one another,one of these radicals usually being an alkyl or alkoxy group. Othervariants of the proposed substituents are also common. Many suchsubstances or also mixtures thereof are commercially available. Allthese substances can be prepared by methods known from the literature.

It goes without saying for the person skilled in the art that the VA,IPS or FFS mixture according to the invention may also comprisecompounds in which, for example, H, N, O, Cl and F have been replaced bythe corresponding isotopes.

Polymerisable compounds, so-called reactive mesogens (RMs), for exampleas disclosed in U.S. Pat. No. 6,861,107, may furthermore be added to themixtures according to the invention in concentrations of preferably0.01-5% by weight, particularly preferably 0.2-2% by weight, based onthe mixture. These mixtures may optionally also comprise an initiator,as described, for example, in U.S. Pat. No. 6,781,665. The initiator,for example Irganox-1076 from BASF, is preferably added to the mixturecomprising polymerisable compounds in amounts of 0-1%. Mixtures of thistype can be used for so-called polymer-stabilised VA modes (PS-VA) orPSA (polymer sustained VA), in which polymerisation of the reactivemesogens is intended to take place in the liquid-crystalline mixture.The prerequisite for this is that the liquid-crystal mixture itself doesnot comprise any polymerisable components.

In a preferred embodiment of the invention, the polymerisable compoundsare selected from the compounds of the formula M

R^(Ma)-A^(M1)-(Z^(M1)-A^(M2))_(m1)-R^(Mb)  M

in which the individual radicals have the following meaning:

-   R^(Ma) and R^(Mb) each, independently of one another, denote P,    P-Sp-, H, halogen, SF₅, NO₂, an alkyl, alkenyl or alkynyl group,    where at least one of the radicals R^(Ma) and R^(Mb) preferably    denotes or contains a group P or P-Sp-,-   P denotes a polymerisable group,-   Sp denotes a spacer group or a single bond,-   A^(M1) and A^(M2) each, independently of one another, denote an    aromatic, heteroaromatic, alicyclic or heterocyclic group,    preferably having 4 to 25 ring atoms, preferably C atoms, which also    includes or may contain annellated rings, and which may optionally    be mono- or polysubstituted by L,-   L denotes P, P-Sp-, OH, CH₂OH, F, Cl, Br, I, —CN, —NO₂, —NCO, —NCS,    —OCN, —SCN, —C(═O)N(R^(x))₂, —C(═O)Y¹, —C(═O)R^(x), —N(R^(x))₂,    optionally substituted silyl, optionally substituted aryl having 6    to 20 C atoms, or straight-chain or branched alkyl, alkoxy,    alkylcarbonyl, alkoxycarbonyl, alkylcarbonyloxy or alkoxycarbonyloxy    having 1 to 25 C atoms, in which, in addition, one or more H atoms    may be replaced by F, Cl, P or P-Sp-, preferably P, P-Sp-, H, OH,    CH₂OH, halogen, SF₅, NO₂, an alkyl, alkenyl or alkynyl group,-   Y¹ denotes halogen,-   Z^(M1) denotes —O—, —S—, —CO—, —CO—O—, —OCO—, —O—CO—O—, —OCH₂—,    —CH₂O—, —SCH₂—, —CH₂S—, —CF₂O—, —OCF₂—, —CF₂S—, —SCF₂—,    —(CH₂)_(n1)—, —CF₂CH₂—, —CH₂CF₂—, —(CF₂)_(n1)—, —CH═CH—, —CF═CF—,    —C≡C—, —CH═CH—, —COO—, —OCO—CH═CH—, CR⁰R⁰⁰ or a single bond,-   R⁰ and R⁰⁰ each, independently of one another, denote H or alkyl    having 1 to 12 C atoms,-   R^(x) denotes P, P-Sp-, H, halogen, straight-chain, branched or    cyclic alkyl having 1 to 25 C atoms, in which, in addition, one or    more non-adjacent CH₂ groups may be replaced by —O—, —S—, —CO—,    —CO—O—, —O—CO—, —O—CO—O— in such a way that O and/or S atoms are not    linked directly to one another, and in which, in addition, one or    more H atoms may be replaced by F, Cl, P or P-Sp-, an optionally    substituted aryl or aryloxy group having 6 to 40 C atoms, or an    optionally substituted heteroaryl or heteroaryloxy group having 2 to    40 C atoms,-   m1 denotes 0, 1, 2, 3 or 4 and-   n1 denotes 1, 2, 3 or 4,    -   where at least one, preferably one, two or three, particularly        preferably one or two, from the group R^(Ma), R^(Mb) and the        substituents L present denotes a group P or P-Sp- or contains at        least one group P or P-Sp-.

Particularly preferred compounds of the formula M are those in which

-   R^(Ma) and R^(Mb) each, independently of one another, denote P,    P-Sp-, H, F, Cl, Br, I, —CN, —NO₂, —NCO, —NCS, —OCN, —SCN, SF₅ or    straight-chain or branched alkyl having 1 to 25 C atoms, in which,    in addition, one or more non-adjacent CH₂ groups may each be    replaced, independently of one another, by —C(R⁰)═C(R⁰⁰)—, —C≡C—,    —N(R⁰⁰)—, —O—, —S—, —CO—, —CO—O—, —O—CO—, —O—CO—O— in such a way    that O and/or S atoms are not linked directly to one another, and in    which, in addition, one or more FI atoms may be replaced by F, Cl,    Br, I, CN, P or P-Sp-, where at least one of the radicals R^(Ma) and    R^(Mb) preferably denotes or contains a group P or P-Sp-,-   A^(M1) and A^(M2) each, independently of one another, denote    1,4-phenylene, naphthalene-1,4-diyl, naphthalene-2,6-diyl,    phenanthrene-2,7-diyl, anthracene-2,7-diyl, fluorene-2,7-diyl,    coumarine, flavone, where, in addition, one or more CH groups in    these groups may be replaced by N, cyclohexane-1,4-diyl, in which,    in addition, one or more non-adjacent CH₂ groups may be replaced by    O and/or S, 1,4-cyclohexenylene, bicyclo[1.1.1]-pentane-1,3-diyl,    bicyclo[2.2.2]octane-1,4-diyl, spiro[3.3]heptane-2,6-diyl,    piperidine-1,4-diyl, decahydronaphthalene-2,6-diyl,    1,2,3,4-tetrahydronaphthalene-2,6-diyl, indane-2,5-diyl or    octahydro-4,7-methanoindane-2,5-diyl, where all these groups may be    unsubstituted or mono- or polysubstituted by L,-   L denotes P, P-Sp-, OH, CH₂OH, F, Cl, Br, I, —CN, —NO₂, —NCO, —NCS,    —OCN, —SCN, —C(═O)N(R^(x))₂, —C(═O)Y¹, —C(═O)R^(x), —N(R^(x))₂,    optionally substituted silyl, optionally substituted aryl having 6    to 20 C atoms, or straight-chain or branched alkyl, alkoxy,    alkylcarbonyl, alkoxycarbonyl, alkylcarbonyloxy or alkoxycarbonyloxy    having 1 to 25 C atoms, in which, in addition, one or more H atoms    may be replaced by F, Cl, P or P-Sp-,-   P denotes a polymerisable group,-   Y¹ denotes halogen,-   R^(x) denotes P, P-Sp-, H, halogen, straight-chain, branched or    cyclic alkyl having 1 to 25 C atoms, in which, in addition, one or    more non-adjacent CH₂ groups may be replaced by —O—, —S—, —CO—,    —CO—O—, —O—CO—, —O—CO—O— in such a way that O and/or S atoms are not    linked directly to one another, and in which, in addition, one or    more H atoms may be replaced by F, Cl, P or P-Sp-, an optionally    substituted aryl or aryloxy group having 6 to 40 C atoms, or an    optionally substituted heteroaryl or heteroaryloxy group having 2 to    40 C atoms.

Very particular preference is given to compounds of the formula M inwhich one of R^(Ma) and R^(Mb) or both denote P or P-Sp-.

Suitable and preferred RMs or monomers or comonomers for use inliquid-crystalline media and PS-VA displays or PSA displays according tothe invention are selected, for example from the following formulae:

in which the individual radicals have the following meanings:

-   P¹, P² and P³ each, identically or differently, denote a    polymerisable group, preferably having one of the meanings indicated    above and below for P, particularly preferably an acrylate,    methacrylate, fluoroacrylate, oxetane, vinyloxy or epoxy group,-   Sp¹, Sp² and Sp³ each, independently of one another, denote a single    bond or a spacer group, preferably having one of the meanings    indicated above and below for Sp^(a), and particularly preferably    —(CH₂)_(p1)—, —(CH₂)_(p1)—O—, —(CH₂)_(p1)—CO—O— or    —(CH₂)_(p1)—O—CO—O—, in which p1 is an integer from 1 to 12, and    where in the last-mentioned groups the linking to the adjacent ring    takes place via the O atom,    -   where one or more of the radicals P¹-Sp¹-, P²-Sp²- and P³-Sp³-        may also denote R^(aa), with the proviso that at least one of        the radicals P¹-Sp¹-, P²-Sp²- and P³-Sp³- present does not        denote R^(aa),-   R^(aa) denotes H, F, Cl, CN or straight-chain or branched alkyl    having 1 to 25 C atoms, in which, in addition, one or more    nonadjacent CH₂ groups may each be replaced, independently of one    another, by C(R⁰)═C(R⁰⁰)—, —C≡C—, —N(R⁰)—, —O—, —S—, —CO—, —CO—O—,    —O—CO—, —O—CO—O— in such a way that O and/or S atoms are not linked    directly to one another, and in which, in addition, one or more H    atoms may be replaced by F, Cl, CN or P¹-Sp¹-, particularly    preferably straight-chain or branched, optionally mono- or    polyfluorinated, alkyl, alkoxy, alkenyl, alkynyl, alkylcarbonyl,    alkoxycarbonyl or alkylcarbonyloxy having 1 to 12 C atoms (where the    alkenyl and alkynyl radicals have at least two and the branched    radicals at least three C atoms),-   R⁰, R⁰⁰ each, independently of one another and on each occurrence    identically or differently, denote FI or alkyl having 1 to 12 C    atoms,-   R^(y) and R^(z) each, independently of one another, denote FI, F,    CH₃ or CF₃,-   X¹, X² and X³ each, independently of one another, denote —CO—O—,    O—CO— or a single bond,-   Z¹ denotes —O—, —CO—, —C(R^(y)R^(z))— or —CF₂CF₂—,-   Z² and Z³ each, independently of one another, denote —CO—O—, —O—CO—,    —CH₂O—, —OCH₂—, —CF₂O—, —OCF₂— or —(CH₂)_(n)—, where n is 2, 3 or 4,-   L on each occurrence, identically or differently, denotes F, Cl, CN,    SCN, SF₅ or straight-chain or branched, optionally mono- or    polyfluorinated, alkyl, alkoxy, alkenyl, alkynyl, alkylcarbonyl,    alkoxycarbonyl, alkylcarbonyloxy or alkoxycarbonyloxy having 1 to 12    C atoms, preferably F or CH₃,-   L′ and L″ each, independently of one another, denote H, CH₃, F or    Cl,-   r denotes 0, 1, 2, 3 or 4,-   s denotes 0, 1, 2 or 3,-   t denotes 0, 1 or 2,-   x denotes 0 or 1.

In the compounds of the formulae M1 to M36,

preferably denotes

in which L, identically or differently on each occurrence, has one ofthe above meanings and preferably denotes F, Cl, CN, NO₂, CH₃, C₂H₅,C(CH₃)₃, CH(CH₃)₂, CH₂CH(CH₃)C₂H₅, OCH₃, OC₂H₅, COCH₃, COC₂H₅, COOCH₃,COOC₂H₅, CF₃, OCF₃, OCHF₂, OC₂F₅ or P-Sp-, particularly preferably F,Cl, CN, CH₃, C₂H₅, OCH₃, COCH₃, OCF₃ or P-Sp-, very particularlypreferably F, Cl, CH₃, OCH₃, COCH₃ or OCF₃, in particular F or CH₃.

Suitable polymerisable compounds are listed, for example, in Table D.

The liquid-crystalline media in accordance with the present applicationpreferably comprise in total 0.1 to 10%, preferably 0.2 to 4.0%,particularly preferably 0.2 to 2.0%, of polymerisable compounds.

Particular preference is given to the polymerisable compounds of theformula M and the formulae RM-1 to RM-102.

The mixtures according to the invention may furthermore compriseconventional additives, such as, for example, stabilisers, antioxidants,UV absorbers, nanoparticles, microparticles, etc.

The structure of the liquid-crystal displays according to the inventioncorresponds to the usual geometry, as described, for example, in EP-A 0240 379.

The following examples are intended to explain the invention withoutlimiting it. Above and below, percent data denote percent by weight; alltemperatures are indicated in degrees Celsius.

Throughout the patent application, 1,4-cyclohexylene rings and1,4-phenylene rings are depicted as follows:

The cyclohexylene rings are trans-1,4-cyclohexylene rings.

Throughout the patent application and in the working examples, thestructures of the liquid-crystal compounds are indicated by means ofacronyms. Unless indicated otherwise, the transformation into chemicalformulae is carried out in accordance with Tables 1-3. All radicalsC_(n)H_(2n+1), C_(m)H_(2m+1) and C_(m) H_(2m′+1) or C_(n)H_(2n) andC_(m)H_(2m) are straight-chain alkyl radicals or alkylene radicalsrespectively, in each case having n, m, m′ or z C atoms respectively, n,m, m′, z each denote, independently of one another, 1, 2, 3, 4, 5, 6, 7,8, 9, 10, 11 or 12, preferably 1, 2, 3, 4, 5 or 6. In Table 1 the ringelements of the respective compound are coded, in Table 2 the bridgingmembers are listed and in Table 3 the meanings of the symbols for theleft-hand or right-hand side chains of the compounds are indicated.

TABLE 1 Ring elements

TABLE 2 Bridging members E —CH₂CH₂— V —CH═CH— T —C≡C— W —CF₂CF₂— Z —COO—ZI —OCO— O —CH₂O— OI —OCH₂— Q —CF₂O— QI —OCF₂—

TABLE 3 Side chains Left-hand side chain n- C_(n)C_(2n+1)— nO—C_(n)H_(2n+1)—O— nS— C_(n)H_(2n+1)—S— V— CH₂═CH— nV—C_(n)H_(2n+1)—CH═CH— Vn— CH₂═CH—C_(n)H_(2n)— nVm—C_(n)H_(2n+1)—CH═CH—C_(m)H_(2m)— N— N≡C— F— F— Cl— Cl— M— CFH₂— D— CF₂H—T— CF₃— MO— CFH₂O— DO— CF₂HO— TO— CF₃O— T— CF₃— A— H—C≡C— C3—

C4—

C5—

Right-hand side chain -n —C_(n)H_(2n+1) —On —O—C_(n)H_(2n+1) —Sn—S—C_(n)H_(2n+1) —V —CH═CH₂ —nV —C_(n)H_(2n)—CH═CH₂ —Vn—CH═CH—C_(n)H_(2n+1) —nVm —C_(n)H_(2n)—CH═CH—C_(m)H_(2m+1) —N —C≡N —F —F—Cl —Cl —M —CFH₂ —D —CF₂H —T —CF₃ —OM —OCFH₂ —OD —OCF₂H —OT —OCF₃ —T—CF₃ —A —C≡C—H —3C

—4C

—5C

Besides one or more compounds of the formulae IA to IH, the mixturesaccording to the invention preferably comprise one or more compounds ofthe compounds from Table A mentioned below.

TABLE A The following abbreviations are used: (n, m, m′, z: each,independently of one another, 1, 2, 3, 4, 5 or 6; (O)C_(m)H_(2m+1) meansOC_(m)H_(2m+1) or C_(m)H_(2m+1))

The liquid-crystal mixtures which can be used in accordance with theinvention are prepared in a manner which is conventional per se. Ingeneral, the desired amount of the components used in lesser amount isdissolved in the components making up the principal constituent,advantageously at elevated temperature. It is also possible to mixsolutions of the components in an organic solvent, for example inacetone, chloroform or methanol, and to remove the solvent again, forexample by distillation, after thorough mixing.

By means of suitable additives, the liquid-crystal phases according tothe invention can be modified in such a way that they can be employed inany type of, for example, ECB, VAN, IPS, GFI or ASM-VA LCD display thathas been disclosed to date.

The dielectrics may also comprise further additives known to the personskilled in the art and described in the literature, such as, forexample, UV absorbers, antioxidants, nanoparticles and free-radicalscavengers. For example, 0-15% of pleochroic dyes, stabilisers, such as,for example, phenols, HALS (hindered amine light stabilisers), forexample Tinuvin 770 (=bis(2,2,6,6-tetramethyl-4-piperidyl) sebacinate),or chiral dopants may be added. Suitable stabilisers for the mixturesaccording to the invention are, in particular, those listed in Table B.

For example, 0-15% of pleochroic dyes may be added, furthermoreconductive salts, preferably ethyldimethyldodecylammonium4-hexoxybenzoate, tetrabutylammonium tetraphenylboranate or complexsalts of crown ethers (cf., for example, Haller et al., Mol. Cryst. Liq.Cryst., Volume 24, pages 249-258 (1973)), may be added in order toimprove the conductivity or substances may be added in order to modifythe dielectric anisotropy, the viscosity and/or the alignment of thenematic phases. Substances of this type are described, for example, inDE-A 22 09 127, 22 40 864, 23 21 632, 23 38 281, 24 50 088, 26 37 430and 28 53 728.

TABLE B

Table B shows possible dopants which can be added to the mixturesaccording to the invention. If the mixtures comprise a dopant, it isadded in amounts of 0.01-4% by weight, preferably 0.01-3% by weight.

TABLE C Stabilisers which can be added, for example, to the mixturesaccording to the invention in amounts of 0-10% by weight, preferably0.001-5% by weight, in particular 0.001-1% by weight, are shown below.

TABLE D

RM-1

RM-2

RM-3

RM-4

RM-5

RM-6

RM-7

RM-8

RM-9

RM-10

RM-11

RM-12

RM-13

RM-14

RM-15

RM-16

RM-17

RM-18

RM-19

RM-20

RM-21

RM-22

RM-23

RM-24

RM-25

RM-26

RM-27

RM-28

RM-29

RM-30

RM-31

RM-32

RM-33

RM-34

RM-35

RM-36

RM-37

RM-38

RM-39

RM-40

RM-41

RM-42

RM-43

RM-44

RM-45

RM-46

RM-47

RM-48

RM-49

RM-50

RM-51

RM-52

RM-53

RM-54

RM-55

RM-56

RM-57

RM-58

RM-59

RM-60

RM-61

RM-62

RM-63

RM-64

RM-65

RM-66

RM-67

RM-68

RM-69

RM-70

RM-71

RM-72

RM-73

RM-74

RM-75

RM-76

RM-77

RM-78

RM-79

RM-80

RM-81

RM-82

RM-83

RM-84

RM-85

RM-86

RM-87

RM-88

RM-89

RM-90

RM-91

RM-92

RM-93

RM-94

RM-95

RM-96

RM-97

RM-98

RM-99

RM-100

RM-101

RM-102

Table D shows example compounds which can preferably be used as reactivemesogenic compounds in the LC media in accordance with the presentinvention. If the mixtures according to the invention comprise one ormore reactive compounds, they are preferably employed in amounts of0.01-5% by weight. It may also be necessary to add an initiator or amixture of two or more initiators for the polymerisation. The initiatoror initiator mixture is preferably added in amounts of 0.001-2% byweight, based on the mixture. A suitable initiator is, for example,Irgacure (BASF) or Irganox (BASF).

In a preferred embodiment, the mixtures according to the inventioncomprise one or more polymerisable compounds, preferably selected fromthe polymerisable compounds of the formulae RM-1 to RM-102. Media ofthis type are suitable, in particular, for PS-VA, PS-FFS and PS-IPSapplications. Of the reactive mesogens shown in Table D, compounds RM-1,RM-2, RM-3, RM-4, RM-5, RM-11, RM-15, RM-17, RM-35, RM-41, RM-44, RM-64,RM-83, RM-95, RM-98 and RM-100 are particularly preferred.

If the medium comprises more than one mesogenic compound, it ispreferred to employ two mesogenic compounds. The following mesogeniccompounds are preferably employed together:

WORKING EXAMPLES

The following examples are intended to explain the invention withoutlimiting it. In the examples, m.p. denotes the melting point and Cdenotes the clearing point of a liquid-crystalline substance in degreesCelsius; boiling temperatures are denoted by m.p. Furthermore:

C denotes crystalline solid state, S denotes smectic phase (the indexdenotes the phase type), N denotes nematic state, Ch denotes cholestericphase, I denotes isotropic phase, T_(g) denotes glass-transitiontemperature. The number between two symbols indicates the conversiontemperature in Celsius an.

The host mixture used for determination of the optical anisotropy Δn ofthe compounds of the formulae IA to IH is the commercial mixtureZLI-4792 (Merck KGaA). The dielectric anisotropy Δε is determined usingcommercial mixture ZLI-2857. The physical data of the compound to beinvestigated are obtained from the change in the dielectric constants ofthe host mixture after addition of the compound to be investigated andextrapolation to 100% of the compound employed. In general, 10% of thecompound to be investigated are dissolved in the host mixture, dependingon the solubility.

Unless indicated otherwise, parts or percent data denote parts by weightor percent by weight.

Above and below:

-   V_(o) denotes threshold voltage, capacitive [V] at 20° C.,-   n_(e) denotes extraordinary refractive index at 20° C. and 589 nm,-   n₀ denotes ordinary refractive index at 20° C. and 589 nm,-   Δn denotes optical anisotropy at 20° C. and 589 nm,-   ε_(⊥) denotes dielectric permittivity perpendicular to the director    at 20° C. and 1 kHz,-   ε_(∥) denotes dielectric permittivity parallel to the director at    20° C. and 1 kHz,-   Δε denotes dielectric anisotropy at 20° C. and 1 kHz,-   cl.p., T(N,I) denotes clearing point [° C.],-   γ₁ denotes rotational viscosity measured at 20° C. [mPa·s],    determined by the rotation method in a magnetic field,-   K₁ denotes elastic constant, “splay” deformation at 20° C. [pN],-   K₂ denotes elastic constant, “twist” deformation at 20° C. [pN],-   K₃ denotes elastic constant, “bend” deformation at 20° C. [pN],-   LTS denotes low-temperature stability (nematic phase), determined in    a bulk sample.

Unless explicitly noted otherwise, all values indicated in the presentapplication for temperatures, such as, for example, the melting pointT(C,N), the transition from the smectic (S) to the nematic (N) phaseT(S,N) and the clearing point T(N,I), are indicated in degrees Celsius(° C.). M.p. denotes melting point, cl.p.=clearing point. Furthermore,Tg=glass state, C=crystalline state, N=nematic phase, S=smectic phaseand I=isotropic phase. The numbers between these symbols represent thetransition temperatures.

The term “threshold voltage” for the present invention relates to thecapacitive threshold (V₀), also called the Freedericksz threshold,unless explicitly indicated otherwise. In the examples, as is generallyusual, the optical threshold can also be indicated for 10% relativecontrast (V₁₀).

The display used for measurement of the capacitive threshold voltageconsists of two plane-parallel glass outer plates at a separation of 20μm, which each have on the insides an electrode layer and an unrubbedpolyimide alignment layer on top, which cause a homeotropic edgealignment of the liquid-crystal molecules.

The display or test cell used for measurement of the tilt angle consistsof two plane-parallel glass outer plates at a separation of 4 μm, whicheach have on the insides an electrode layer and a polyimide alignmentlayer on top, where the two polyimide layers are rubbed antiparallel toone another and cause a homeotropic edge alignment of the liquid-crystalmolecules.

The polymerisable compounds are polymerised in the display or test cellby irradiation with UVA light (usually 365 nm) of a defined intensityfor a pre-specified time, with a voltage simultaneously being applied tothe display (usually 10 V to 30 V alternating current, 1 kHz). In theexamples, unless indicated otherwise, a 50 mW/cm² mercury vapour lamp isused, and the intensity is measured using a standard UV meter (makeUshio UNI meter) fitted with a 365 nm band-pass filter.

The tilt angle is determined by a rotational crystal experiment(Autronic-Melchers TBA-105). A low value (i.e. a large deviation fromthe 90° angle) corresponds to a large tilt here.

The VHR value is measured as follows: 0.3% of a polymerisable monomericcompound are added to the LC host mixture, and the resultant mixture isintroduced into TN-VHR test cells (rubbed at 90°, alignment layer TNpolyimide, layer thickness d 6 μm). The HR value is determined after 5min at 100° C. before and after UV exposure for 2 h (sun test) at 1 V,60 Hz, 64 ρs pulse (measuring instrument: Autronic-Melchers VHRM-105).

In order to investigate the low-temperature stability, also known as“LTS”, i.e. the stability of the LC mixture to spontaneouscrystallisation-out of individual components at low temperatures,bottles containing 1 g of LC/RM mixture are stored at −10° C., and it isregularly checked whether the mixtures have crystallised out.

The so-called “HTP” denotes the helical twisting power of an opticallyactive or chiral substance in an LC medium (in μm). Unless indicatedotherwise, the HTP is measured in the commercially available nematic LChost mixture MLD-6260 (Merck KGaA) at a temperature of 20° C.

Unless explicitly noted otherwise, all concentrations in the presentapplication are indicated in percent by weight and relate to thecorresponding mixture as a whole, comprising all solid orliquid-crystalline components, without solvents. All physical propertiesare determined in accordance with “Merck Liquid Crystals, PhysicalProperties of Liquid Crystals”, Status November 1997, Merck KGaA,Germany, and apply for a temperature of 20° C., unless explicitlyindicated otherwise.

The following mixture examples having negative dielectric anisotropy aresuitable, in particular, for liquid-crystal displays which have at leastone planar alignment layer, such as, for example, IPS and FFS displays,in particular UB-FFS (=ultra-bright FFS), and for VA displays.

MIXTURE EXAMPLES Example M1

BCH-32 8.00% Clearing point [° C.]: 76 CC-3-V1 9.00% Δn [589 nm, 20°C.]: 0.1096 CC-3-V2 17.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1 4.50%ε_(⊥) [1 kHz, 20° C.]: 6.8 CCP-V2-1 4.50% Δε [1 kHz, 20° C.]: −3.3CCY-3-O1 4.00% K₁ [pN, 20° C.]: 14.9 CCY-3-O2 10.50% K₃ [pN, 20° C.]:17.1 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.42 CPY-3-O2 4.50% γ₁ [mPa s, 20°C.]: 111 CY-3-O2 15.50% LTS bulk [−20° C.]: >1000 h PCH-301 3.50%PY-3-O2 18.00%

Example M2

B(S)-2O-O5 4.00% Clearing point [° C.]: 74.5 B(S)-2O-O4 3.00% Δn [589nm, 20° C.]: 0.1098 BCH-32 6.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V16.00% ε_(⊥) [1 kHz, 20° C.]: 6.7 CC-3-V2 22.00% Δε [1 kHz, 20° C.]: −3.1CCP-3-1 11.50% K₁ [pN, 20° C.]: 15.1 CCY-3-O2 10.50% K₃ [pN, 20° C.]:16.1 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.43 CY-3-O2 12.50% γ₁ [mPa s, 20°C.]: 96 PCH-3O1 8.50% LTS bulk [−20° C.]: >1000 h PY-3-O2 12.00% PYP-2-33.00%

Example M3

CC-3-V1 9.00% Clearing point [° C.]: 74.5 CC-3-V2 10.00% Δn [589 nm, 20°C.]: 0.1089 CCP-V2-1 5.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-3O1 3.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CCH-34 8.00% Δε [1 kHz, 20° C.]: −3.1 BCH-323.50% K₁ [pN, 20° C.]: 14.1 CLY-3-O2 10.00% K₃ [pN, 20° C.]: 16.0CPY-2-O2 3.00% V₀ [pN, 20° C.]: 2.40 CPY-3-O2 9.50% γ₁ [mPa s, 20° C.]:97 CY-3-O2 8.00% PY-1-O2 6.50% PCH-3O1 17.50% B(S)-2O-O5 4.00%B(S)-2O-O4 3.00%

Example M4

B-2O-O5 4.00% Clearing point [° C.]: 74.5 BCH-32 8.00% Δn [589 nm, 20°C.]: 0.1096 CC-3-V1 9.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V2 17.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCP-3-1 8.00% Δε [1 kHz, 20° C.]: −3.2CCP-V2-1 5.00% K₁ [pN, 20° C.]: 14.8 CCY-3-O2 10.50% K₃ [pN, 20° C.]:16.7 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.43 CPY-3-O2 2.50% γ₁ [mPa s, 20°C.]: 104 CY-3-O2 14.00% LTS bulk [−20° C.]: >1000 h PCH-301 5.50%PY-3-O2 15.50%

Example M5

B(S)-2O-O5 4.00% Clearing point [° C.]: 74.5 B(S)-2O-O4 3.00% Δn [589nm, 20° C.]: 0.1096 BCH-32 8.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V19.00% ε_(⊥) [1 kHz, 20° C.]: 6.8 CC-3-V2 17.00% Δε [1 kHz, 20° C.]: −3.2CCP-3-1 10.50% K₁ [pN, 20° C.]: 14.6 CCP-V2-1 5.00% K₃ [pN, 20° C.]:16.3 CCY-3-O2 8.00% V₀ [pN, 20° C.]: 2.40 CLY-3-O2 1.00% γ₁ [mPa s, 20°C.]: 94 CY-3-O2 15.00% LTS bulk [−20° C.]: >1000 h PCH-3O1 6.00% PY-1-O26.50% PY-2-O2 7.00%

Example M6

CC-3-V1 7.00% Clearing point [° C.]: 74.5 CC-3-V2 17.00% Δn [589 nm, 20°C.]: 0.0992 CCH-34 4.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-35 7.00% ε_(⊥)[1 kHz, 20° C.]: 7.1 CCP-3-1 6.50% Δε [1 kHz, 20° C.]: −3.6 CCY-3-O211.00% K₁ [pN, 20° C.]: 15.1 CPY-2-O2 3.00% K₃ [pN, 20° C.]: 16.6CPY-3-O2 11.00% V₀ [pN, 20° C.]: 2.28 CY-3-O2 15.50% γ₁ [mPa s, 20° C.]:108 CY-3-O4 7.00% LTS bulk [−20° C.]: >1000 h PY-3-O2 11.00%

Example M7

CC-3-V1 8.00% Clearing point [° C.]: 74 CC-3-V2 16.50% Δn [589 nm, 20°C.]: 0.0999 CCH-34 5.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCH-35 4.00% ε_(⊥)[1 kHz, 20° C.]: 7.2 CCP-3-1 14.00% Δε [1 kHz, 20° C.]: −3.5 CCY-3-O16.50% K₁ [pN, 20° C.]: 15.7 CCY-3-O2 10.00% K₃ [pN, 20° C.]: 16.2CPY-3-O2 2.00% V₀ [pN, 20° C.]: 2.27 CY-3-O2 10.00% γ₁ [mPa s, 20° C.]:95 B(S)-2O-O5 4.00% B(S)-2O-O4 3.00% PP-1-3 3.50% Y-4O-O4 4.50% PY-1-O27.00% PY-2-O2 2.00%

Example M8

BCH-32 8.00% Clearing point [° C.]: 75 CC-3-V1 9.00% Δn [589 nm, 20°C.]: 0.1096 CC-4-V1 17.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1 3.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CCP-V2-1 5.00% Δε [1 kHz, 20° C.]: −3.2CCY-3-O1 3.50% K₁ [pN, 20° C.]: 14.5 CCY-3-O2 10.50% K₃ [pN, 20° C.]:16.8 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.41 CPY-3-O2 4.50% γ₁ [mPa s, 20°C.]: 111 CY-3-O2 15.50% LTS bulk [−20° C.]: >1000 h PCH-3O1 5.00%PY-3-O2 18.00%

Example M9

CC-3-V1 5.50% Clearing point [° C.]: 75 CC-4-V1 10.00% Δn [589 nm, 20°C.]: 0.1094 CCP-V2-1 5.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-3O1 5.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CCH-34 5.00% Δε [1 kHz, 20° C.]: −3.1 CCH-355.00% K₁ [pN, 20° C.]: 14.2 BCH-32 3.50% K₃ [pN, 20° C.]: 15.9 CLY-3-O210.00% V₀ [pN, 20° C.]: 2.40 CPY-2-O2 3.00% γ₁ [mPa s, 20° C.]: 99CPY-3-O2 9.50% LTS bulk [−20° C.]: >1000 h CY-3-O2 6.00% PY-1-O2 8.00%PCH-301 17.50% B(S)-2O-O5 4.00% B(S)-2O-O4 3.00%

Example M10

B-2O-O5 4.00% Clearing point [° C.]: 74.5 BCH-32 8.00% Δn [589 nm, 20°C.]: 0.1093 CC-3-V1 9.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-4-V1 17.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CCP-3-1 7.50% Δε [1 kHz, 20° C.]: −3.2CCP-V2-1 5.00% K₁ [pN, 20° C.]: 14.4 CCY-3-O2 10.00% K₃ [pN, 20° C.]:16.6 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.42 CPY-3-O2 2.50% γ₁ [mPa s, 20°C.]: 104 CY-3-O2 15.00% PCH-301 6.00% PY-3-O2 15.00%

Example M11

B-2O-O5 4.00% Clearing point [° C.]: 75.5 BCH-32 8.00% Δn [589 nm, 20°C.]: 0.1088 CC-3-V1 9.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-4-V1 23.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CCP-3-1 6.50% Δε [1 kHz, 20° C.]: −3.2CCP-V2-1 5.00% K₁ [pN, 20° C.]: 15.2 CCY-3-O2 8.00% K₃ [pN, 20° C.]:16.6 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.43 CPY-3-O2 3.50% γ₁ [mPa s, 20°C.]: 104 CY-3-O2 16.00% LTS bulk [−20° C.]: >1000 h PY-3-O2 16.00%

Example M12

B(S)-2O-O5 4.00% Clearing point [° C.]: 75.5 B(S)-2O-O4 3.00% Δn [589nm, 20° C.]: 0.1100 BCH-32 8.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V19.00% ε_(⊥) [1 kHz, 20° C.]: 6.7 CC-4-V1 23.00% Δε [1 kHz, 20° C.]: −3.2CCP-3-1 9.00% K₁ [pN, 20° C.]: 15.5 CCP-V2-1 5.00% K₃ [pN, 20° C.]: 16.2CCY-3-O2 6.00% V₀ [pN, 20° C.]: 2.38 CLY-3-O2 1.00% γ₁ [mPa s, 20° C.]:98 CY-3-O2 15.50% LTS bulk [−20° C.]: >1000 h PY-3-O2 14.00% PY-1-O42.50%

Example M13

B(S)-2O-O5 4.00% Clearing point [° C.]: 75 B(S)-2O-O4 3.00% Δn [589 nm,20° C.]: 0.1095 BCH-32 8.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V1 9.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CC-4-V1 23.00% Δε [1 kHz, 20° C.]: −3.1CCP-3-1 10.50% K₁ [pN, 20° C.]: 14.6 CCP-V2-1 5.00% K₃ [pN, 20° C.]:15.9 CCY-3-O2 5.00% V₀ [pN, 20° C.]: 2.39 CLY-3-O2 1.00% γ₁ [mPa s, 20°C.]: 92 CY-3-O2 15.50% LTS bulk [−20° C.]: >1000 h PY-1-O2 8.00% PY-2-O28.00%

Example M14

CC-3-V1 5.00% Clearing point [° C.]: 109.6 CC-4-V1 5.00% Δn [589 nm, 20°C.]: 0.0976 CCH-301 8.50% ε_(∥) [1 kHz, 20° C.]: 3.4 CCH-303 5.00% ε_(⊥)[1 kHz, 20° C.]: 6.8 CCH-501 3.00% Δε [1 kHz, 20° C.]: −3.5 CCP-3-16.00% K₁ [pN, 20° C.]: 17.5 CCPC-33 2.00% K₃ [pN, 20° C.]: 20.2 CCY-3-O15.00% V₀ [pN, 20° C.]: 2.55 CCY-3-O2 9.00% γ₁ [mPa s, 20° C.]: 206CCY-3-O3 7.00% CCY-4-O2 8.00% CCY-5-O2 5.00% CPY-2-O2 6.00% CPY-3-O210.00% CY-3-O2 5.50% PCH-301 10.00%

Example M15

CC-3-V1 7.50% Clearing point [° C.]: 74.5 CC-4-V1 19.50% Δn [589 nm, 20°C.]: 0.0982 CCH-34 5.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCH-35 4.00% ε_(⊥)[1 kHz, 20° C.]: 7.1 CCP-3-1 12.50% Δε [1 kHz, 20° C.]: −3.4 CCY-3-O16.00% K₁ [pN, 20° C.]: 15.5 CCY-3-O2 10.50% K₃ [pN, 20° C.]: 15.8CPY-3-O2 2.00% V₀ [pN, 20° C.]: 2.26 CY-3-O2 9.00% γ₁ [mPa s, 20° C.]:94 B(S)-2O-O5 4.00% LTS bulk [−20° C.]: >1000 h B(S)-2O-O4 3.00% PP-1-33.00% Y-4O-O4 5.00% PY-1-O2 6.00% PY-2-O2 3.00%

Example M16

B(S)-2O-O5 4.00% Clearing point [° C.]: 75 B(S)-2O-O4 3.00% Δn [589 nm,20° C.]: 0.1094 BCH-32 7.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V1 9.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CC-3-V2 11.00% Δε [1 kHz, 20° C.]: −3.1CC-4-V1 12.00% K₁ [pN, 20° C.]: 15.6 CCP-3-1 10.00% K₃ [pN, 20° C.]:16.1 CCP-V2-1 5.00% V₀ [pN, 20° C.]: 2.40 CCY-3-O2 5.50% γ₁ [mPa s, 20°C.]: 94 CLY-3-O2 1.00% LTS bulk [−20° C.]: >1000 h CY-3-O2 15.00%PY-3-O2 14.00% PY-1-O4 3.00%

Example M17

B(S)-2O-O5 4.00% Clearing point [° C.]: 74 B(S)-2O-O4 3.00% Δn [589 nm,20° C.]: 0.1091 BCH-32 8.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-3-V1 7.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CC-3-V2 10.00% Δε [1 kHz, 20° C.]: −3.0CC-4-V1 15.00% K₁ [pN, 20° C.]: 15.3 CCP-3-1 10.50% K₃ [pN, 20° C.]:15.7 CCP-V2-1 5.00% V₀ [pN, 20° C.]: 2.40 CCY-3-O2 4.50% γ₁ [mPa s, 20°C.]: 94 CLY-3-O2 1.00% CY-3-O2 15.50% PY-3-O2 14.00% PY-1-O4 2.50%

Example M18

CC-3-V1 5.00% Clearing point [° C.]: 75 CC-4-V1 23.00% Δn [589 nm, 20°C.]: 0.0985 CC-3-V2 14.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCY-3-O1 7.50%ε_(⊥) [1 kHz, 20° C.]: 7.1 CCY-3-O2 11.00% Δε [1 kHz, 20° C.]: −3.6CPY-3-O2 9.50% K₁ [pN, 20° C.]: 14.7 CY-3-O2 15.50% K₃ [pN, 20° C.]:16.4 PY-3-O2 5.50% V₀ [pN, 20° C.]: 2.27 PY-1-O2 9.00% γ₁ [mPa s, 20°C.]: 102

Example M19

PCH-302 8.00% Clearing point [° C.]: 76.5 CC-3-V1 9.00% Δn [589 nm, 20°C.]: 0.1017 CC-3-V2 11.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-4-V1 12.00%ε_(⊥) [1 kHz, 20° C.]: 7.0 CCP-V-1 2.50% Δε [1 kHz, 20° C.]: −3.5CLY-2-O4 4.00% K₁ [pN, 20° C.]: 15.2 CLY-3-O2 6.00% K₃ [pN, 20° C.]:16.6 CLY-3-O3 5.00% V₀ [pN, 20° C.]: 2.29 CLY-4-O2 4.00% γ₁ [mPa s, 20°C.]: 113 CLY-5-O2 4.00% LTS bulk [−20° C.]: >1000 h CPY-3-O2 7.00%CY-3-O2 15.00% CY-3-O4 2.50% PY-3-O2 10.00%

Example M20

CCH-35 6.00% Clearing point [° C.]: 76 CC-3-V1 9.00% Δn [589 nm, 20°C.]: 0.1024 CC-3-V2 11.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-4-V1 12.00%ε_(⊥) [1 kHz, 20° C.]: 7.3 CCP-V-1 3.00% Δε [1 kHz, 20° C.]: −3.7CLY-2-O4 4.00% K₁ [pN, 20° C.]: 15.7 CLY-3-O2 6.00% K₃ [pN, 20° C.]:16.3 CLY-3-O3 5.00% V₀ [pN, 20° C.]: 2.23 CLY-4-O2 4.00% γ₁ [mPa s, 20°C.]: 107 CLY-5-O2 4.00% LTS bulk [−20° C.]: >1000 h CPY-3-O2 4.50%CY-3-O2 15.00% PY-3-O2 7.50% PY-1-O2 9.00%

Example M21

PCH-302 17.50% Clearing point [° C.]: 75.5 CC-3-V1 9.00% Δn [589 nm, 20°C.]: 0.1018 CC-3-V2 11.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-4-V1 12.00%ε_(⊥) [1 kHz, 20° C.]: 7.2 CLY-2-O4 4.00% Δε [1 kHz, 20° C.]: −3.7CLY-3-O2 6.00% K₁ [pN, 20° C.]: 15.7 CLY-3-O3 5.00% K₃ [pN, 20° C.]:16.8 CLY-4-O2 4.00% V₀ [pN, 20° C.]: 2.27 CLY-5-O2 4.00% γ₁ [mPa s, 20°C.]: 107 CPY-3-O2 2.50% LTS bulk [−20° C.]: >1000 h CY-3-O2 14.00%PY-3-O2 3.00% B(S)-2O-O5 4.00% B(S)-2O-O4 4.00%

Example M22

PCH-3O2 5.50% Clearing point [° C.]: 76 CCH-34 8.00% Δn [589 nm, 20°C.]: 0.1025 CCH-35 7.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-3-V1 5.00% ε_(⊥)[1 kHz, 20° C.]: 7.3 CC-3-V2 11.00% Δε [1 kHz, 20° C.]: −3.7 CC-4-V111.50% K₁ [pN, 20° C.]: 17.0 CLY-2-O4 4.00% K₃ [pN, 20° C.]: 15.4CLY-3-O2 6.00% V₀ [pN, 20° C.]: 2.15 CLY-3-O3 5.00% γ₁ [mPa s, 20° C.]:98 CLY-4-O2 4.00% CLY-5-O2 4.00% CY-3-O2 6.50% PY-3-O2 5.50% PY-1-O29.00% B(S)-2O-O5 4.00% B(S)-2O-O4 4.00%

Example M23

CCY-3-O1 3.00% Clearing point [° C.]: 94.5 CCY-3-O2 10.50% Δn [589 nm,20° C.]: 0.0999 CLY-2-O4 4.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CLY-3-O2 5.00%ε_(⊥) [1 kHz, 20° C.]: 8.5 CLY-3-O3 5.00% Δε [1 kHz, 20° C.]: −4.9CLY-4-O2 4.00% K₁ [pN, 20° C.]: 17.7 CLY-5-O2 5.00% K₃ [pN, 20° C.]:18.0 CPY-3-O2 4.50% V₀ [pN, 20° C.]: 2.03 CC-3-V 11.00% γ₁ [mPa s, 20°C.]: 148 CC-3-V2 11.00% CC-4-V1 12.00% CY-3-O2 15.00% CY-3-O4 3.00%B(S)-2O-O5 4.00% B(S)-2O-O4 3.00%

Example M24

CCY-3-O2 5.50% Clearing point [° C.]: 88.5 CLY-2-O4 4.00% Δn [589 nm,20° C.]: 0.1003 CLY-3-O2 5.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CLY-3-O3 5.00%ε_(⊥) [1 kHz, 20° C.]: 8.1 CLY-4-O2 4.00% Δε [1 kHz, 20° C.]: −4.5CLY-5-O2 5.00% K₁ [pN, 20° C.]: 16.7 CPY-3-O2 8.50% K₃ [pN, 20° C.]:16.9 CC-3-V 14.00% V₀ [pN, 20° C.]: 2.04 CC-3-V2 11.00% γ₁ [mPa s, 20°C.]: 127 CC-4-V1 12.00% CY-3-O2 15.00% CY-3-O4 4.00% B(S)-2O-O5 4.00%B(S)-2O-O4 3.00%

Example M25

B(S)-2O-O5 4.00% Clearing point [° C.]: 73.5 B(S)-2O-O4 3.00% Δn [589nm, 20° C.]: 0.1093 BCH--32 8.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V19.00% ε_(⊥) [1 kHz, 20° C.]: 6.7 CC-3-V2 11.00% Δε [1 kHz, 20° C.]: −3.1CC-4-V1 12.00% K₁ [pN, 20° C.]: 14.8 CCP-3-1 11.00% K₃ [pN, 20° C.]:15.7 CCP-V2-1 5.00% V₀ [pN, 20° C.]: 2.39 CCY-3-O2 4.50% γ₁ [mPa s, 20°C.]: 88 CLY-3-O2 1.00% LTS bulk [−20° C.]: >1000 h CY-3-O2 15.00%PY-1-O2 8.00% PY-1-O2 8.50%

Example M26

CCH-34 6.00% Clearing point [° C.]: 76 CCH-35 6.00% Δn [589 nm, 20° C.]:0.1029 CCH-23 8.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-3-V1 5.00% ε_(⊥) [1kHz, 20° C.]: 7.2 CC-3-V2 11.00% Δε [1 kHz, 20° C.]: −3.7 CC-4-V1 11.00%K₁ [pN, 20° C.]: 17.3 CLY-2-O4 4.00% K₃ [pN, 20° C.]: 14.8 CLY-3-O26.00% V₀ [pN, 20° C.]: 2.12 CLY-3-O3 5.00% γ₁ [mPa s, 20° C.]: 94CLY-4-O2 4.00% CLY-5-O2 4.00% CPY-3-O2 1.00% CY-3-O2 3.00% PY-3-O2 8.00%PY-1-O2 10.00% B(S)-2O-O5 4.00% B(S)-2O-O4 4.00%

Example M27

CC-3-V1 4.00% Clearing point [° C.]: 74.5 CC-4-V1 18.00% Δn [589 nm, 20°C.]: 0.0976 CC-3-V2 15.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCP-3-1 12.50%ε_(⊥) [1 kHz, 20° C.]: 7.0 CCY-3-O1 6.00% Δε [1 kHz, 20° C.]: −3.4CCY-3-O2 10.50% K₁ [pN, 20° C.]: 15.3 CPY-3-O2 2.00% K₃ [pN, 20° C.]:15.6 CY-3-O2 9.50% V₀ [pN, 20° C.]: 2.27 B(S)-2O-O5 4.00% γ₁ [mPa s, 20°C.]: 91 B(S)-2O-O4 3.00% LTS bulk [−20° C.]: >1000 h PP-1-3 2.50%Y-4O-O4 5.00% PY-1-O2 5.00% PY-2-O2 3.00%

Example M28

BCH-32 3.00% Clearing point [° C.]: 76 CC-3-V1 9.00% Δn [589 nm, 20°C.]: 0.1023 CC-3-V2 11.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-4-V1 12.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCP-3-1 9.00% Δε [1 kHz, 20° C.]: −3.2CCY-3-O1 5.50% K₁ [pN, 20° C.]: 14.9 CCY-3-O2 10.50% K₃ [pN, 20° C.]:17.1 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.45 CPY-3-O2 4.00% γ₁ [mPa s, 20°C.]: 105 CY-3-O2 15.00% LTS bulk [−20° C.]: >1000 h PCH-301 3.00%PY-3-O2 17.00%

Example M29

BCH-32 3.00% Clearing point [° C.]: 76 CC-3-V1 9.00% Δn [589 nm, 20°C.]: 0.1103 CC-3-V2 11.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-4-V1 12.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CCP-3-1 7.50% Δε [1 kHz, 20° C.]: −3.3CCY-3-O2 7.00% K₁ [pN, 20° C.]: 14.9 CLY-3-O2 1.00% K₃ [pN, 20° C.]:17.1 CPY-2-O2 4.50% V₀ [pN, 20° C.]: 2.40 CPY-3-O2 11.00% γ₁ [mPa s, 20°C.]: 110 CY-3-O2 14.50% LTS bulk [−20° C.]: >1000 h PCH-301 3.00%PY-3-O2 16.50%

Example M30

BCH-32 3.00% Clearing point [° C.]: 75.9 CC-3-V1 9.00% Δn [589 nm, 20°C.]: 0.1108 CC-3-V2 11.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-4-V1 12.00%ε_(⊥) [1 kHz, 20° C.]: 7.1 CCP-3-1 5.00% Δε [1 kHz, 20° C.]: −3.5CCY-3-O2 9.50% K₁ [pN, 20° C.]: 15.0 CLY-3-O2 1.00% K₃ [pN, 20° C.]:17.1 CPY-2-O2 4.50% V₀ [pN, 20° C.]: 2.34 CPY-3-O2 11.00% γ₁ [mPa s, 20°C.]: 113 CY-3-O2 14.50% LTS bulk [−20° C.]: >1000 h PCH-301 3.00%PY-3-O2 16.50%

Example M31

CCH-34 5.00% Clearing point [° C.]: 76 CCH-35 5.00% Δn [589 nm, 20° C.]:0.1033 CCH-23 10.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-3-V1 5.00% ε_(⊥) [1kHz, 20° C.]: 7.2 CC-3-V2 11.00% Δε [1 kHz, 20° C.]: −3.7 CC-4-V1 11.00%K₁ [pN, 20° C.]: 17.1 CLY-2-O4 4.00% K₃ [pN, 20° C.]: 14.7 CLY-3-O26.00% V₀ [pN, 20° C.]: 2.11 CLY-3-O3 5.00% γ₁ [mPa s, 20° C.]: 94CLY-4-O2 4.00% CLY-5-O2 4.00% CPY-3-O2 1.50% CY-3-O2 2.50% PY-3-O2 8.00%PY-1-O2 10.00% B(S)-2O-O5 4.00% B(S)-2O-O4 4.00%

Example M32

CCH-34 5.00% Clearing point [° C.]: 76 CCH-35 5.00% Δn [589 nm, 20° C.]:0.1018 CCH-23 10.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-3-V1 5.00% ε_(⊥)[1kHz, 20° C.]: 7.2 CC-3-V2 11.00% Δε [1 kHz, 20° C.]: −3.7 CC-4-V1 11.00%K₁ [pN, 20° C.]: 17.2 CLY-2-O4 4.00% K₃ [pN, 20° C.]: 14.7 CLY-3-O26.00% V₀ [pN, 20° C.]: 2.12 CLY-3-O3 5.00% γ₁ [mPa s, 20° C.]: 94CLY-4-O2 4.00% CLY-5-O2 4.00% CPY-3-O2 1.50% CY-3-O2 4.00% PY-3-O2 8.00%PY-1-O2 8.50% B(S)-2O-O5 4.00% B(S)-2O-O4 4.00%

Example M33

PCH-302 17.50% Clearing point [° C.]: 76 CC-3-V1 9.00% Δn [589 nm, 20°C.]: 0.1022 CC-3-V2 11.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-4-V1 12.00%ε_(⊥) [1 kHz, 20° C.]: 7.2 CLY-2-O4 4.00% Δε [1 kHz, 20° C.]: −3.7CLY-3-O2 6.00% K₁ [pN, 20° C.]: 15.6 CLY-3-O3 5.00% K₃ [pN, 20° C.]:16.5 CLY-4-O2 4.00% V₀ [pN, 20° C.]: 2.24 CLY-5-O2 4.00% γ₁ [mPa s, 20°C.]: 108 CY-3-O2 16.00% LTS bulk [−20° C.]: >1000 h PGIY-2-O4 3.50%B(S)-2O-O5 4.00% B(S)-2O-O4 4.00%

Example M34

CCP-V-1 10.00% Clearing point [° C.]: 86 CCY-3-O2 8.00% Δn [589 nm, 20°C.]: 0.1010 CLY-2-O4 5.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-4-O2 5.00%ε_(⊥) [1 kHz, 20° C.]: 7.2 CPY-2-O2 11.00% Δε [1 kHz, 20° C.]: −3.7PGIY-2-O4 3.00% K₁ [pN, 20° C.]: 16.2 B-2O-O5 4.00% K₃ [pN, 20° C.]:15.4 CC-3-V2 17.00% V₀ [pN, 20° C.]: 2.15 CC-3-V1 8.00% γ₁ [mPa s, 20°C.]: 130 CC-4-V1 8.00% CY-3-O4 20.00% CY-3-O4 1.00%

Example M35

CCY-3-O2 2.00% Clearing point [° C.]: 87 CLY-2-O4 4.00% Δn [589 nm, 20°C.]: 0.1004 CLY-3-O2 5.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CLY-3-O3 5.00%ε_(⊥) [1 kHz, 20° C.]: 8.2 CLY-4-O2 4.00% Δε [1 kHz, 20° C.]: −4.5CLY-5-O2 5.00% K₁ [pN, 20° C.]: 17.1 CPY-3-O2 8.00% K₃ [pN, 20° C.]:16.4 CC-3-V2 14.00% V₀ [pN, 20° C.]: 2.01 CC-4-V1 23.00% γ₁ [mPa s, 20°C.]: 135 CY-3-O2 15.50% LTS bulk [−20° C.]: >1000 h CY-3-O4 7.50%B(S)-2O-O5 4.00% B(S)-2O-O5 3.00%

Example M36

CCY-3-O2 8.00% Clearing point [° C.]: 85 CLY-2-O4 5.00% Δn [589 nm, 20°C.]: 0.1001 CLY-4-O2 5.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-5-O2 5.00%ε_(⊥) [1 kHz, 20° C.]: 7.3 CPY-2-O2 11.00% Δε [1 kHz, 20° C.]: −3.8PGIY-2-O4 6.00% K₁ [pN, 20° C.]: 16.7 B-2O-O5 4.00% K₃ [pN, 20° C.]:15.0 CC-3-V2 17.00% V₀ [pN, 20° C.]: 2.10 CC-3-V1 8.00% γ₁ [mPa s, 20°C.]: 127 CC-4-V1 6.00% CY-3-O4 15.00% CCH-23 10.00%

Example M37

CCY-3-O2 2.00% Clearing point [° C.]: 83.5 CLY-2-O4 5.00% Δn [589 nm,20° C.]: 0.1005 CLY-4-O2 5.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-5-O2 4.50%ε_(⊥) [1 kHz, 20° C.]: 7.2 CLY-3-O3 5.00% Δε [1 kHz, 20° C.]: −3.8PGIY-2-O4 6.00% K₁ [pN, 20° C.]: 16.6 CY-3-O4 19.00% K₃ [pN, 20° C.]:15.0 CC-3-V2 17.00% V₀ [pN, 20° C.]: 2.11 CC-3-V1 8.00% γ₁ [mPa s, 20°C.]: 119 CC-4-V1 0.50% LTS bulk [−20° C.]: >1000 h CCP-V1 10.00% CCH-2310.00% B(S)-2O-O5 4.00% B(S)-2O-O4 4.00%

Example M38

CCY-3-O2 7.00% Clearing point [° C.]: 84 CLY-4-O2 5.00% Δn [589 nm, 20°C.]: 0.1011 CLY-5-O2 2.50% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-3-O3 2.50%ε_(⊥) [1 kHz, 20° C.]: 7.1 PGIY-2-O4 5.50% Δε [1 kHz, 20° C.]: −3.7CY-3-O4 16.00% K₁ [pN, 20° C.]: 17.2 CC-3-V2 17.00% K₃ [pN, 20° C.]:15.5 CC-3-V1 8.00% V₀ [pN, 20° C.]: 2.17 CC-4-V1 4.50% γ₁ [mPa s, 20°C.]: 112 CCP-V1 10.00% CCH-23 10.00% B(S)-2O-O5 4.00% B(S)-2O-O4 4.00%B(S)-2O-O6 4.00%

Example M39

CCY-3-O2 5.50% Clearing point [° C.]: 84 CLY-4-O2 5.00% Δn [589 nm, 20°C.]: 0.1018 CLY-5-O2 2.50% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-3-O3 2.50%ε_(⊥) [1 kHz, 20° C.]: 7.4 PGIY-2-O4 2.00% Δε [1 kHz, 20° C.]: −3.9CY-3-O4 14.50% K₁ [pN, 20° C.]: 17.4 CC-3-V2 17.00% K₃ [pN, 20° C.]:15.7 CC-3-V1 8.00% V₀ [pN, 20° C.]: 2.13 CC-4-V1 2.00% γ₁ [mPa s, 20°C.]: 111 CCP-V1 15.00% CCH-23 10.00% B(S)-2O-O5 4.00% B(S)-2O-O4 4.00%B(S)-2O-O6 4.00% B-2O-O5 4.00%

Example M40

CCY-3-O2 6.00% Clearing point [° C.]: 84 CLY-4-O2 5.00% Δn [589 nm, 20°C.]: 0.1014 CLY-2-O4 3.50% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-5-O2 2.50%ε_(⊥) [1 kHz, 20° C.]: 7.4 CLY-3-O3 2.50% Δε [1 kHz, 20° C.]: −3.9PGIY-2-O4 5.00% K₁ [pN, 20° C.]: 17.2 CY-3-O4 14.50% K₃ [pN, 20° C.]:15.3 CC-3-V2 17.00% V₀ [pN, 20° C.]: 2.11 CC-3-V1 8.00% γ₁ [mPa s, 20°C.]: 114 CC-4-V1 4.00% CCP-V1 10.00% CCH-23 10.00% B(S)-2O-O5 4.00%B(S)-2O-O4 4.00% B-2O-O5 4.00%

Example M41

CCY-3-O2 7.00% Clearing point [° C.]: 84 CLY-4-O2 5.00% Δn [589 nm, 20°C.]: 0.1020 CLY-3-O3 3.00% ε_(∥) [1 kHz, 20° C.]: 3.4 PGIY-2-O4 5.00%ε_(⊥) [1 kHz, 20° C.]: 7.1 CY-3-O4 12.00% Δε [1 kHz, 20° C.]: −3.7CC-3-V2 17.00% K₁ [pN, 20° C.]: 18.2 CC-3-V1 8.00% K₃ [pN, 20° C.]: 15.4CC-4-V1 9.00% V₀ [pN, 20° C.]: 2.16 CCP-V1 8.00% γ₁ [mPa s, 20° C.]: 104CCH-23 10.00% B(S)-2O-O5 4.00% B(S)-2O-O4 4.00% B(S)-2O-O6 4.00%B(S)-4O-O5 4.00%

Example M42

CCY-3-O2 11.00% Clearing point [° C.]: 93.5 CLY-4-O2 5.00% Δn [589 nm,20° C.]: 0.1002 CLY-3-O2 9.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-5-O2 9.00%ε_(⊥) [1 kHz, 20° C.]: 7.9 CLY-3-O3 1.00% Δε [1 kHz, 20° C.]: −4.4PGIY-2-O4 3.00% K₁ [pN, 20° C.]: 18.5 CY-3-O4 15.00% K₃ [pN, 20° C.]:18.4 CC-3-V 15.00% V₀ [pN, 20° C.]: 2.17 CC-3-V1 7.00% γ₁ [mPa s, 20°C.]: 137 CC-3-V2 12.00% CC-4-V1 5.00% B(S)-2O-O5 4.00% B(S)-2O-O4 4.00%

Example M43

CCY-3-O2 6.00% Clearing point [° C.]: 87 CLY-4-O2 5.00% Δn [589 nm, 20°C.]: 0.0996 CLY-3-O3 4.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-3-O2 5.00%ε_(⊥) [1 kHz, 20° C.]: 7.4 CLY-5-O2 9.00% Δε [1 kHz, 20° C.]: −3.9PGIY-2-O4 6.00% K₁ [pN, 20° C.]: 16.9 CY-3-O4 14.00% K₃ [pN, 20° C.]:16.5 CC-3-V 22.50% V₀ [pN, 20° C.]: 2.17 CC-3-V1 7.00% γ₁ [mPa s, 20°C.]: 113 CC-3-V2 10.00% CC-4-V1 3.50% B(S)-2O-O5 4.00% B(S)-2O-O4 4.00%

Example M44

CCY-3-O2 10.00% Clearing point [° C.]: 86 CLY-4-O2 5.00% Δn [589 nm, 20°C.]: 0.1014 CLY-3-O3 4.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-3-O2 5.00%ε_(⊥) [1 kHz, 20° C.]: 7.4 CLY-5-O2 0.50% Δε [1 kHz, 20° C.]: −3.9PGIY-2-O4 6.00% K₁ [pN, 20° C.]: 17.3 CY-3-O4 11.00% K₃ [pN, 20° C.]:16.2 CC-3-V 20.50% V₀ [pN, 20° C.]: 2.15 CC-3-V1 7.00% γ₁ [mPa s, 20°C.]: 108 CC-3-V2 10.00% CC-4-V1 9.00% B(S)-2O-O5 4.00% B(S)-2O-O4 4.00%B(S)-2O-O6 4.00%

Example M45

CC-3-V2 20.00% Clearing point [° C.]: 75 CC-4-V1 7.50% Δn [589 nm, 20°C.]: 0.0997 CCH-34 3.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-35 4.00% ε_(⊥)[1kHz, 20° C.]: 7 CCP-3-1 8.50% Δε [1 kHz, 20° C.]: −3.5 CCY-3-O2 11.50%K₁ [pN, 20° C.]: 15.1 CPY-3-O2 11.00% K₃ [pN, 20° C.]: 16.5 CY-3-O215.50% V₀ [pN, 20° C.]: 2.29 CY-5-O2 6.00% γ₁ [mPa s, 20° C.]: 108PY-3-O2 6.00% PY-1-O2 7.00%

Example M46

CC-3-V2 20.00% Clearing point [° C.]: 74.5 CC-4-V1 14.00% Δn [589 nm,20° C.]: 0.0982 CCH-24 5.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCP-3-1 6.50%ε_(⊥)[1 kHz, 20° C.]: 6.7 CCY-3-O1 5.50% Δε [1 kHz, 20° C.]: −3.2CCY-3-O2 11.00% K₁ [pN, 20° C.]: 14.6 CPY-3-O2 8.00% K₃ [pN, 20° C.]:15.5 CY-3-O2 13.00% V₀ [pN, 20° C.]: 2.31 PY-3-O2 10.00% γ₁ [mPa s, 20°C.]: 98 PY-1-O2 7.00%

Example M47

CC-3-V1 7.50% Clearing point [° C.]: 75 CC-4-V1 17.00% Δn [589 nm, 20°C.]: 0.0984 CC-3-V2 11.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-24 6.50% ε_(⊥)[1 kHz, 20° C.]: 6.9 CCY-3-O1 7.50% Δε [1 kHz, 20° C.]: −3.4 CCY-3-O211.00% K₁ [pN, 20° C.]: 14.1 CPY-3-O2 10.00% K₃ [pN, 20° C.]: 15.3CCP-3-1 2.00% V₀ [pN, 20° C.]: 2.25 CY-3-O2 11.50% γ₁ [mPa s, 20° C.]:98 PY-1-O2 8.00% PY-1-O2 8.00%

Example M48

CC-3-V1 7.00% Clearing point [° C.]: 74.2 CC-4-V1 18.00% Δn [589 nm, 20°C.]: 0.1000 CCH-34 3.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-35 7.00% ε_(⊥)[1 kHz, 20° C.]: 6.9 CCP-3-1 9.00% Δε [1 kHz, 20° C.]: −3.4 CCY-3-O210.00% K₁ [pN, 20° C.]: 15.1 CPY-3-O2 9.50% K₃ [pN, 20° C.]: 16.5CY-3-O2 15.50% V₀ [pN, 20° C.]: 2.34 CY-3-O4 7.50% γ₁ [mPa s, 20° C.]:110 PY-3-O2 11.50% LTS bulk [−20° C.]: >1000 h PGIY-2-O4 2.00%

Example M49

CC-3-V1 7.00% Clearing point [° C.]: 74.1 CC-4-V1 18.00% Δn [589 nm, 20°C.]: 0.0975 CCH-34 7.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-35 2.00% ε_(⊥)[1 kHz, 20° C.]: 7.0 CCP-3-1 9.00% Δε [1 kHz, 20° C.]: −3.4 CCY-3-O110.00% K₁ [pN, 20° C.]: 14.2 CPY-3-O2 9.50% K₃ [pN, 20° C.]: 15.3CY-3-O2 15.50% V₀ [pN, 20° C.]: 2.24 CY-3-O4 11.00% γ₁ [mPa s, 20° C.]:112 PGIY-2-O4 4.50% PY-3-O2 6.50%

Example M50

CC-3-V1 8.50% Clearing point [° C.]: 74 CC-4-V1 18.00% Δn [589 nm, 20°C.]: 0.0988 CCH-34 5.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-35 5.00% ε_(⊥)[1 kHz, 20° C.]: 7.0 CCP-3-1 6.50% Δε [1 kHz, 20° C.]: −3.4 CCY-3-O210.00% K₁ [pN, 20° C.]: 14.8 CPY-3-O2 10.00% K₃ [pN, 20° C.]: 16.1CY-3-O2 15.50% V₀ [pN, 20° C.]: 2.29 CY-3-O4 9.00% γ₁ [mPa s, 20° C.]:109 PGIY-2-O4 4.00% LTS bulk [−20° C.]: >1000 h PY-3-O2 8.50%

Example M51

CC-3-V1 8.50% Clearing point [° C.]: 74.4 CC-4-V1 18.00% Δn [589 nm, 20°C.]: 0.0992 CCH-34 5.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-35 5.00% ε_(⊥)[1 kHz, 20° C.]: 7.0 CCP-3-1 8.50% Δε [1 kHz, 20° C.]: −3.4 CCY-3-O210.00% K₁ [pN, 20° C.]: 15.1 CPY-3-O2 7.00% K₃ [pN, 20° C.]: 16.1CY-3-O2 15.50% V₀ [pN, 20° C.]: 2.29 CY-3-O4 7.50% γ₁ [mPa s, 20° C.]:109 PGIY-2-O4 4.00% LTS bulk [−20° C.]: >1000 h PY-3-O2 9.00% B(S)-2O-O52.00%

Example M52

CC-3-V1 8.50% Clearing point [° C.]: 74.1 CC-4-V1 18.00% Δn [589 nm, 20°C.]: 0.0990 CCH-34 5.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-35 5.00% ε_(⊥)[1 kHz, 20° C.]: 7.0 CCP-3-1 10.50% Δε [1 kHz, 20° C.]: −3.4 CCY-3-O210.00% K₁ [pN, 20° C.]: 15.1 CPY-3-O2 2.50% K₃ [pN, 20° C.]: 15.7CY-3-O2 15.50% V₀ [pN, 20° C.]: 2.26 CY-3-O4 7.50% γ₁ [mPa s, 20° C.]:104 PGIY-2-O4 5.50% PY-3-O2 8.00% B(S)-2O-O5 4.00%

Example M53

CC-3-V1 5.50% Clearing point [° C.]: 74 CC-4-V1 22.00% Δn [589 nm, 20°C.]: 0.0985 CCH-34 4.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-35 5.00% ε_(⊥)[1 kHz, 20° C.]: 7.0 CCP-3-1 6.50% Δε [1 kHz, 20° C.]: −3.4 CCY-3-O110.00% K₁ [pN, 20° C.]: 14.8 CCY-3-O2 10.00% K₃ [pN, 20° C.]: 15.7CY-3-O2 15.50% V₀ [pN, 20° C.]: 2.27 PGIY-2-O4 4.00% γ₁ [mPa s, 20° C.]:105 PY-3-O2 17.00%

Example M54

B(S)-2O-O5 4.00% Clearing point [° C.]: 75 B(S)-2O-O4 3.00% Δn [589 nm,20° C.]: 0.1093 BCH-32 7.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V1 9.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CC-4-V1 23.00% Δε [1 kHz, 20° C.]: −3.2CCP-3-1 10.00% K₁ [pN, 20° C.]: 15.4 CCP-V2-1 5.00% K₃ [pN, 20° C.]:16.1 CCY-3-O2 5.00% V₀ [pN, 20° C.]: 2.39 CLY-3-O2 1.00% γ₁ [mPa s, 20°C.]: 96 CY-3-O2 15.50% LTS bulk [−20° C.]: >1000 h PY-3-O2 14.00%PY-1-O4 3.00%

Example M55

B(S)-2O-O5 4.00% Clearing point [° C.]: 74 B(S)-2O-O4 3.00% Δn [589 nm,20° C.]: 0.1092 BCH-32 8.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V1 9.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CC-4-V1 23.00% Δε [1 kHz, 20° C.]: −3.0CCP-3-1 11.50% K₁ [pN, 20° C.]: 14.6 CCP-V2-1 5.00% K₃ [pN, 20° C.]:15.7 CCY-3-O2 3.50% V₀ [pN, 20° C.]: 2.41 CLY-3-O2 1.00% γ₁ [mPa s, 20°C.]: 89 CY-3-O2 15.50% LTS bulk [−20° C.]: >1000 h PY-1-O2 8.00% PY-2-O28.50%

Example M56

B-2O-O5 4.00% Clearing point [° C.]: 75 BCH-32 8.00% Δn [589 nm, 20°C.]: 0.1088 CC-3-V1 9.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-4-V1 20.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CCP-3-1 7.00% Δε [1 kHz, 20° C.]: −3.2CCP-V2-1 5.00% K₁ [pN, 20° C.]: 14.9 CCY-3-O2 10.00% K₃ [pN, 20° C.]:16.6 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.40 CPY-3-O2 2.00% γ₁ [mPa s, 20°C.]: 105 CY-3-O2 15.50% LTS bulk [−20° C.]: >1000 h PCH-301 6.00%PY-3-O2 16.00%

Example M57

PCH-302 17.50% Clearing point [° C.]: 76 CC-3-V1 9.00% Δn [589 nm, 20°C.]: 0.1020 CC-4-V1 23.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-2-O4 4.00%ε_(⊥) [1 kHz, 20° C.]: 7.2 CLY-3-O2 6.00% Δε [1 kHz, 20° C.]: −3.7CLY-3-O3 5.00% K₁ [pN, 20° C.]: 15.7 CLY-4-O2 4.00% K₃ [pN, 20° C.]:16.9 CLY-5-O2 4.00% V₀ [pN, 20° C.]: 2.26 CPY-3-O2 2.00% γ₁ [mPa s, 20°C.]: 110 CY-3-O2 14.00% LTS bulk [−20° C.]: >1000 h PY-3-O2 3.50%B(S)-2O-O5 4.00% B(S)-2O-O4 4.00%

Example M58

PCH-302 8.00% Clearing point [° C.]: 75.5 CCH-23 8.00% Δn [589 nm, 20°C.]: 0.1017 CC-3-V1 9.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-4-V1 23.00%ε_(⊥) [1 kHz, 20° C.]: 7.2 CLY-2-O4 4.00% Δε [1 kHz, 20° C.]: −3.7CLY-3-O2 6.00% K₁ [pN, 20° C.]: 15.8 CLY-3-O3 5.00% K₃ [pN, 20° C.]:15.7 CLY-4-O2 4.00% V₀ [pN, 20° C.]: 2.19 CLY-5-O2 4.00% γ₁ [mPa s, 20°C.]: 99 CPY-3-O2 2.00% LTS bulk [−20° C.]: >1000 h CY-3-O2 9.00% PY-3-O210.00% B(S)-2O-O5 4.00% B(S)-2O-O4 4.00%

Example M59

CC-3-V1 7.00% Clearing point [° C.]: 74.5 CC-4-V1 18.00% Δn [589 nm, 20°C.]: 0.0997 CCH-34 3.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-35 6.00% ε_(⊥)[1 kHz, 20° C.]: 7.0 CCP-3-1 11.00% Δε [1 kHz, 20° C.]: −3.4 CCY-3-O26.00% K₁ [pN, 20° C.]: 14.4 CPY-3-O2 11.00% K₃ [pN, 20° C.]: 15.4CPY-2-O2 4.00% V₀ [pN, 20° C.]: 2.25 CY-3-O2 15.50% γ₁ [mPa s, 20° C.]:108 CY-3-O4 5.00% LTS bulk [−20° C.]: >1000 h PY-3-O2 3.50% Y-4O-O45.00% PGIY-2-O4 5.00%

Example M60

B(S)-2O-O5 5.00% Clearing point [° C.]: 74 B(S)-2O-O4 4.00% Δn [589 nm,20° C.]: 0.1092 BCH-32 8.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V1 9.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CC-4-V1 22.00% Δε [1 kHz, 20° C.]: −3.0CCP-3-1 13.50% K₁ [pN, 20° C.]: 15.2 CCP-V2-1 5.00% K₃ [pN, 20° C.]:15.7 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.40 CY-3-O2 15.50% γ₁ [mPa s, 20°C.]: 93 CY-3-O4 3.00% PY-3-O2 14.00%

Example M61

B(S)-2-3 10.00% Clearing point [° C.]: 74 BCH-32 5.50% Δn [589 nm, 20°C.]: 0.1085 CC-3-V1 9.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-4-V1 22.00%ε_(⊥) [1 kHz, 20° C.]: 6.5 CCP-3-1 6.00% Δε [1 kHz, 20° C.]: −3.0CCP-V2-1 5.00% K₁ [pN, 20° C.]: 14.6 CCY-3-O2 10.50% K₃ [pN, 20° C.]:15.8 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.44 CPY-3-O2 5.00% γ₁ [mPa s, 20°C.]: 105 CY-3-O2 15.00% LTS bulk [−20° C.]: >1000 h PY-3-O2 11.00%

Example M62

B(S)-1-4 10.00% Clearing point [° C.]: 74.5 BCH-32 5.50% Δn [589 nm, 20°C.]: 0.1092 CC-3-V1 9.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-4-V1 22.00%ε_(⊥)[1 kHz, 20° C.]: 6.6 CCP-3-1 5.50% Δε [1 kHz, 20° C.]: −3.0CCP-V2-1 5.00% K₁ [pN, 20° C.]: 14.8 CCY-3-O2 10.50% K₃ [pN, 20° C.]:15.9 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.42 CPY-3-O2 5.00% γ₁ [mPa s, 20°C.]: 107 CY-3-O2 15.00% LTS bulk [−20° C.]: >1000 h PY-3-O2 11.50%

Example M63

B(S)-1-6 10.00% Clearing point [° C.]: 75.5 BCH-32 5.50% Δn [589 nm, 20°C.]: 0.1087 CC-3-V1 9.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-4-V1 22.00%ε_(⊥) [1 kHz, 20° C.]: 6.5 CCP-3-1 5.50% Δε [1 kHz, 20° C.]: −3.0CCP-V2-1 5.00% K₁ [pN, 20° C.]: 15.2 CCY-3-O2 10.50% K₃ [pN, 20° C.]:16.0 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.44 CPY-3-O2 5.00% γ₁ [mPa s, 20°C.]: 110 CY-3-O2 15.00% LTS bulk [−20° C.]: >1000 h PY-3-O2 11.50%

Example M64

CC-3-V1 6.00% Clearing point [° C.]: 75 CC-4-V1 24.00% Δn [589 nm, 20°C.]: 0.0981 CCH-34 4.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1 12.00% ε_(⊥)[1 kHz, 20° C.]: 7.0 CCY-3-O2 11.00% Δε [1 kHz, 20° C.]: −3.3 CPY-3-O27.50% K₁ [pN, 20° C.]: 14.5 CY-3-O2 15.50% K₃ [pN, 20° C.]: 15.8 CY-3-O44.00% V₀ [pN, 20° C.]: 2.30 PY-3-O2 6.00% γ₁ [mPa s, 20° C.]: 105Y-4O-O4 4.50% PGIY-2-O4 5.50%

Example M65

PCH-302 11.50% Clearing point [° C.]: 75.5 CCH-23 5.00% Δn [589 nm, 20°C.]: 0.1022 CC-3-V1 9.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-4-V1 23.00%ε_(⊥) [1 kHz, 20° C.]: 7.2 CLY-2-O4 4.00% Δε [1 kHz, 20° C.]: −3.7CLY-3-O2 6.00% K₁ [pN, 20° C.]: 15.8 CLY-3-O3 5.00% K₃ [pN, 20° C.]:16.1 CLY-4-O2 4.00% V₀ [pN, 20° C.]: 2.21 CLY-5-O2 4.00% γ₁ [mPa s, 20°C.]: 103 CPY-3-O2 2.00% LTS bulk [−20° C.]: >1000 h CY-3-O2 11.00%PY-3-O2 7.50% B(S)-2O-O5 4.00% B(S)-2O-O4 4.00%

Example M66

CCY-3-O2 5.50% Clearing point [° C.]: 89.5 CLY-2-O4 4.00% Δn [589 nm,20° C.]: 0.1005 CLY-3-O2 5.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CLY-3-O3 5.00%ε_(⊥) [1 kHz, 20° C.]: 8.1 CLY-4-O2 4.00% Δε [1 kHz, 20° C.]: −4.5CLY-5-O2 5.00% K₁ [pN, 20° C.]: 16.7 CPY-3-O2 8.50% K₃ [pN, 20° C.]:17.0 CC-3-V 14.00% V₀ [pN, 20° C.]: 2.05 CC-4-V1 23.00% γ₁ [mPa s, 20°C.]: 133 CY-3-O2 15.00% LTS bulk [−20° C.]: >1000 h CY-3-O4 4.00%B(S)-2O-O5 4.00% B(S)-2O-O4 3.00%

Example M67

CCY-3-O2 4.00% Clearing point [° C.]: 89.5 CLY-2-O4 4.00% Δn [589 nm,20° C.]: 0.0999 CLY-3-O2 5.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-3-O3 5.00%ε_(⊥) [1 kHz, 20° C.]: 8.0 CLY-4-O2 4.00% Δε [1 kHz, 20° C.]: −4.5CLY-5-O2 5.00% K₁ [pN, 20° C.]: 17.3 CPY-3-O2 11.00% K₃ [pN, 20° C.]:16.6 CCH-23 14.50% V₀ [pN, 20° C.]: 2.04 CC-4-V1 23.00% γ₁ [mPa s, 20°C.]: 139 CY-3-O2 14.50% LTS bulk [−20° C.]: >1000 h CY-3-O4 3.00%B(S)-2O-O5 4.00% B(S)-2O-O4 3.00%

Example M68

CC-3-V1 7.00% Clearing point [° C.]: 75 CC-4-V1 20.00% Δn [589 nm, 20°C.]: 0.0992 CCH-34 3.50% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-35 7.00% ε_(⊥)[1 kHz, 20° C.]: 7.1 CCP-3-1 2.00% Δε [1 kHz, 20° C.]: −3.6 CCY-3-O213.00% K₁ [pN, 20° C.]: 14.9 CPY-3-O2 11.50% K₃ [pN, 20° C.]: 16.4CY-3-O2 16.00% V₀ [pN, 20° C.]: 2.27 CY-3-O4 4.00% γ₁ [mPa s, 20° C.]:114 CY-5-O2 4.00% PY-3-O2 8.50% PYP-2-3 3.50%

Example M69

CC-3-V1 7.00% Clearing point [° C.]: 75 CC-4-V1 20.00% Δn [589 nm, 20°C.]: 0.0997 CCH-34 4.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-35 7.50% ε_(⊥)[1 kHz, 20° C.]: 7.1 CCP-3-1 3.00% Δε [1 kHz, 20° C.]: −3.6 CCY-3-O212.50% K₁ [pN, 20° C.]: 15.1 CPY-3-O2 10.00% K₃ [pN, 20° C.]: 16.3CY-3-O2 15.00% V₀ [pN, 20° C.]: 2.26 CY-3-O4 3.00% γ₁ [mPa s, 20° C.]:113 CY-5-O2 3.50% PY-3-O2 10.00% PGIY-2-O4 4.00%

Example M70

CC-3-V1 7.00% Clearing point [° C.]: 75 CC-4-V1 20.00% Δn [589 nm, 20°C.]: 0.1001 CCH-34 4.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-35 8.00% ε_(⊥)[1 kHz, 20° C.]: 7.0 CCY-3-O1 5.00% Δε [1 kHz, 20° C.]: −3.5 CCY-3-O212.50% K₁ [pN, 20° C.]: 15.1 CPY-3-O2 8.00% K₃ [pN, 20° C.]: 16.1CY-3-O2 15.50% V₀ [pN, 20° C.]: 2.26 CY-5-O2 4.50% γ₁ [mPa s, 20° C.]:113 PY-3-O2 11.00% PYP-2-3 4.50%

Example M71

CC-3-V1 7.00% Clearing point [° C.]: 75 CC-4-V1 20.00% Δn [589 nm, 20°C.]: 0.0991 CCH-34 4.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-35 4.00% ε_(⊥)[1 kHz, 20° C.]: 6.9 CCP-3-1 12.50% Δε [1 kHz, 20° C.]: −3.3 CCY-3-O26.00% K₁ [pN, 20° C.]: 14.9 CY-3-O2 12.50% K₃ [pN, 20° C.]: 15.2B(S)-2O-O5 4.00% V₀ [pN, 20° C.]: 2.26 B(S)-2O-O4 3.00% γ₁ [mPa s, 20°C.]: 91 PP-1-3 4.00% LTS bulk [−20° C.]: >1000 h Y-4O-O4 5.00% PY-V2-O24.00% CCY-V-O2 6.00% CPY-V-O2 3.00% CPY-V-O4 4.00%

Example M72

CC-3-V1 7.50% Clearing point [° C.]: 75 CC-4-V1 20.00% Δn [589 nm, 20°C.]: 0.0989 CCH-34 4.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-35 7.50% ε_(⊥)[1 kHz, 20° C.]: 7.1 CCP-3-1 2.50% Δε [1 kHz, 20° C.]: −3.6 CCY-3-O212.50% K₁ [pN, 20° C.]: 15.2 CPY-3-O2 12.50% K₃ [pN, 20° C.]: 16.8CY-3-O2 15.50% V₀ [pN, 20° C.]: 2.29 CY-3-O4 2.50% γ₁ [mPa s, 20° C.]:112 CY-5-O2 2.50% PY-3-O2 12.00% PGIY-2-O4 1.00%

Example M73

CC-3-V1 7.50% Clearing point [° C.]: 75 CC-4-V1 20.00% Δn [589 nm, 20°C.]: 0.0997 CCH-34 3.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-35 7.00% ε_(⊥)[1 kHz, 20° C.]: 7.1 CCP-3-1 3.50% Δε [1 kHz, 20° C.]: −3.6 CCY-3-O213.00% K₁ [pN, 20° C.]: 15.2 CPY-3-O2 12.00% K₃ [pN, 20° C.]: 16.9CY-3-O2 15.50% V₀ [pN, 20° C.]: 2.30 CY-3-O4 5.00% γ₁ [mPa s, 20° C.]:114 CY-5-O2 2.50% PY-3-O2 12.50% PYP-2-3 1.00%

Example M74

CC-3-V1 7.50% Clearing point [° C.]: 75.5 CC-4-V1 20.00% Δn [589 nm, 20°C.]: 0.0990 CCH-34 4.50% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-35 9.00% ε_(⊥)[1 kHz, 20° C.]: 7.0 CCY-3-O1 2.00% Δε [1 kHz, 20° C.]: −3.6 CCY-3-O212.50% K₁ [pN, 20° C.]: 15.5 CPY-3-O2 12.50% K₃ [pN, 20° C.]: 16.7CY-3-O2 15.50% V₀ [pN, 20° C.]: 2.30 CY-5-O2 2.50% γ₁ [mPa s, 20° C.]:112 PY-3-O2 13.00% PYP-2-3 1.00%

Example M75

CCY-3-O2 11.00% Clearing point [° C.]: 88 CLY-4-O2 5.00% Δn [589 nm, 20°C.]: 0.1015 CLY-3-O3 4.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-3-O2 5.00%ε_(⊥) [1 kHz, 20° C.]: 7.4 CLY-5-O2 2.00% Δε [1 kHz, 20° C.]: −3.9PGIY-2-O4 6.00% K₁ [pN, 20° C.]: 17.1 CY-3-O4 8.50% K₃ [pN, 20° C.]:16.8 CC-3-V 28.50% V₀ [pN, 20° C.]: 2.19 CC-3-V1 7.00% γ₁ [mPa s, 20°C.]: 107 CC-4-V1 11.00% B(S)-2O-O5 4.00% B(S)-2O-O4 4.00% B(S)-2O-O64.00%

Example M76

CC-3-V1 5.50% Clearing point [° C.]: 74.3 CC-4-V1 22.00% Δn [589 nm, 20°C.]: 0.0986 CCH-34 6.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-35 3.50% ε_(⊥)[1 kHz, 20° C.]: 7.0 CCP-3-1 6.50% Δε [1 kHz, 20° C.]: −3.4 CCY-3-O19.00% K₁ [pN, 20° C.]: 14.9 CCY-3-O2 10.00% K₃ [pN, 20° C.]: 15.8CPY-3-O2 2.00% V₀ [pN, 20° C.]: 2.27 CY-3-O2 15.50% γ₁ [mPa s, 20° C.]:107 PGIY-2-O4 3.00% PY-1-O4 2.00% PY-3-O2 15.00%

Example M77

CC-3-V1 5.50% Clearing point [° C.]: 74.1 CC-4-V1 22.00% Δn [589 nm, 20°C.]: 0.0984 CCH-34 5.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-35 5.00% ε_(⊥)[1 kHz, 20° C.]: 6.9 CCP-3-1 6.50% Δε [1 kHz, 20° C.]: −3.4 CCY-3-O15.00% K₁ [pN, 20° C.]: 14.8 CCY-3-O2 10.00% K₃ [pN, 20° C.]: 15.7CPY-2-O2 3.50% V₀ [pN, 20° C.]: 2.29 CPY-3-O2 3.00% γ₁ [mPa s, 20° C.]:105 CY-3-O2 15.50% LTS bulk [−20° C.]: >1000 h CY-5-O2 2.00% PGIY-2-O42.00% PY-3-O2 15.00%

Example M78

CC-3-V1 5.00% Clearing point [° C.]: 73.2 CC-4-V1 22.00% Δn [589 nm, 20°C.]: 0.1003 CCH-34 5.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-35 4.50% ε_(⊥)[1kHz, 20° C.]: 7.1 CCP-3-1 6.50% Δε [1 kHz, 20° C.]: −3.5 CCY-3-O1 5.00%K₁ [pN, 20° C.]: 14.6 CCY-3-O2 10.00% K₃ [pN, 20° C.]: 16.0 CPY-2-O22.50% V₀ [pN, 20° C.]: 2.26 CPY-3-O2 2.50% γ₁ [mPa s, 20° C.]: 107CY-3-O2 15.50% CY-5-O2 3.50% PGIY-2-O4 4.00% PY-1-O2 13.50%

Example M79

CC-3-V1 5.50% Clearing point [° C.]: 74.7 CC-4-V1 22.00% Δn [589 nm, 20°C.]: 0.0990 CCH-34 4.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-35 5.50% ε_(⊥)[1 kHz, 20° C.]: 7.1 CCP-3-1 7.00% Δε [1 kHz, 20° C.]: −3.5 CCY-3-O17.50% K₁ [pN, 20° C.]: 14.9 CCY-3-O2 10.00% K₃ [pN, 20° C.]: 16.3CPY-3-O2 2.00% V₀ [pN, 20° C.]: 2.29 CY-3-O2 15.50% γ₁ [mPa s, 20° C.]:108 CY-5-O2 3.00% PGIY-2-O4 4.00% PY-1-O2 14.00%

Example M80

CC-3-V1 5.50% Clearing point [° C.]: 74.3 CC-4-V1 22.00% Δn [589 nm, 20°C.]: 0.0992 CCH-34 4.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-35 5.50% ε_(⊥)[1 kHz, 20° C.]: 7.1 CCP-3-1 7.00% Δε [1 kHz, 20° C.]: −3.5 CCY-3-O17.50% K₁ [pN, 20° C.]: 14.8 CCY-3-O2 10.00% K₃ [pN, 20° C.]: 16.2CPY-3-O2 1.00% V₀ [pN, 20° C.]: 2.28 CY-3-O2 15.50% γ₁ [mPa s, 20° C.]:106 CY-5-O2 3.50% PGIY-2-O4 5.00% PY-1-O2 13.50%

Example M81

CC-4-V1 23.00% Clearing point [° C.]: 74.7 CC-3-V1 7.00% Δn [589 nm, 20°C.]: 0.0940 CCH-34 5.00% ε_(∥) [1 kHz, 20° C.]: 3.3 CCH-35 4.00% ε_(⊥)[1 kHz, 20° C.]: 6.3 CLY-3-O2 5.00% Δε [1 kHz, 20° C.]: −2.9 CLY-3-O36.00% K₁ [pN, 20° C.]: 14.5 CPY-2-O2 8.00% K₃ [pN, 20° C.]: 15.4CPY-3-O2 8.50% V₀ [pN, 20° C.]: 2.43 CY-3-O2 15.50% γ₁ [mPa s, 20° C.]:99 CY-3-O4 7.00% LTS bulk [−20° C.]: >1000 h PCH-302 10.00% PYP-2-31.00%

Example M82

CC-4-V1 23.00% Clearing point [° C.]: 75.2 CC-3-V1 7.00% Δn [589 nm, 20°C.]: 0.0948 CCH-34 5.00% ε_(∥) [1 kHz, 20° C.]: 3.4 CCH-35 4.50% ε_(⊥)[1 kHz, 20° C.]: 6.3 CCY-3-O1 8.00% Δε [1 kHz, 20° C.]: −2.9 CCY-3-O22.00% K₁ [pN, 20° C.]: 14.2 CPY-2-O2 6.00% K₃ [pN, 20° C.]: 15.4CPY-3-O2 11.00% V₀ [pN, 20° C.]: 2.42 CY-3-O2 16.00% γ₁ [mPa s, 20° C.]:101 CY-3-O4 7.00% LTS bulk [−20° C.]: >1000 h PCH-302 7.50% PYP-2-33.00%

Example M83

CC-3-V1 7.00% Clearing point [° C.]: 75.5 CC-4-V1 20.00% Δn [589 nm, 20°C.]: 0.0991 CCH-34 3.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-24 5.00% ε_(⊥)[1 kHz, 20° C.]: 7.0 CCP-3-1 7.50% Δε [1 kHz, 20° C.]: −3.5 CCY-3-O212.50% K₁ [pN, 20° C.]: 14.9 CPY-3-O2 12.50% K₃ [pN, 20° C.]: 16.5CY-3-O2 15.50% V₀ [pN, 20° C.]: 2.30 CY-3-O4 4.50% γ₁ [mPa s, 20° C.]:112 PY-3-O2 12.50% LTS bulk [−20° C.]: >1000 h

Example M84

CC-3-V1 8.00% Clearing point [° C.]: 86.9 CC-4-V1 8.00% Δn [589 nm, 20°C.]: 0.1050 CCH-34 16.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCY-3-O2 5.00%ε_(⊥) [1 kHz, 20° C.]: 8.0 CCY-3-O3 5.00% Δε [1 kHz, 20° C.]: −4.4CCY-4-O2 8.00% K₁ [pN, 20° C.]: 16.8 CLY-3-O2 8.00% K₃ [pN, 20° C.]:17.2 CPY-2-O2 8.00% V₀ [pN, 20° C.]: 2.09 CPY-3-O2 7.00% γ₁ [mPa s, 20°C.]: 146 CY-3-O2 15.00% PY-3-O2 12.00%

Example M85

CC-3-V1 1.00% Clearing point [° C.]: 74.5 CC-4-V1 23.00% Δn [589 nm, 20°C.]: 0.0996 CCH-34 5.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-35 5.00% ε_(⊥)[1 kHz, 20° C.]: 7.0 CCP-3-1 9.00% Δε [1 kHz, 20° C.]: −3.5 CCY-3-O212.00% K₁ [pN, 20° C.]: 15.1 CPY-3-O2 10.00% K₃ [pN, 20° C.]: 16.4CY-3-O2 15.50% V₀ [pN, 20° C.]: 2.30 CY-3-O4 4.00% γ₁ [mPa s, 20° C.]:111 PY-3-O2 15.50%

Example M86

CY-3-O2 14.00% Clearing point [° C.]: 86.8 CY-3-O4 2.00% Δn [589 nm, 20°C.]: 0.1029 CY-5-O2 12.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCY-3-O1 5.00%ε_(⊥) [1 kHz, 20° C.]: 8.0 CCY-3-O2 9.00% Δε [1 kHz, 20° C.]: −4.3CCY-4-O2 8.00% K₁ [pN, 20° C.]: 15.6 CPY-2-O2 8.00% K₃ [pN, 20° C.]:16.6 CPY-3-O2 8.00% V₀ [pN, 20° C.]: 2.07 PYP-2-3 5.00% γ₁ [mPa s, 20°C.]: 153 CC-3-V1 7.00% CCH-34 10.00% CC-4-V1 12.00%

Example M87

CY-3-O2 12.00% Clearing point [° C.]: 86.6 CY-3-O4 2.00% Δn [589 nm, 20°C.]: 0.1043 CY-5-O2 12.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCY-3-O1 5.00%ε_(⊥) [1 kHz, 20° C.]: 8.0 CCY-3-O2 9.00% Δε [1 kHz, 20° C.]: −4.3CCY-4-O2 8.00% K₁ [pN, 20° C.]: 16.3 CPY-2-O2 2.00% K₃ [pN, 20° C.]:16.2 CPY-3-O2 6.00% V₀ [pN, 20° C.]: 2.05 PYP-2-3 5.00% γ₁ [mPa s, 20°C.]: 145 CC-3-V1 7.00% BCH-32 4.00% CCH-34 13.00% CC-4-V1 10.00%B(S)-2O-O5 5.00%

Example M88

BCH-32 7.00% Clearing point [° C.]: 86.4 CC-3-V1 7.00% Δn [589 nm, 20°C.]: 0.1098 CC-4-V1 9.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCH-34 14.00% ε_(⊥)[1 kHz, 20° C.]: 8.0 CCY-3-O2 5.00% Δε [1 kHz, 20° C.]: −4.3 CCY-3-O35.00% K₁ [pN, 20° C.]: 17.0 CCY-4-O2 8.00% K₃ [pN, 20° C.]: 16.3CLY-3-O2 8.00% V₀ [pN, 20° C.]: 2.05 CPY-2-O2 6.00% γ₁ [mPa s, 20° C.]:139 CY-3-O2 14.00% PY-3-O2 12.00% B(S)-2O-O5 5.00%

Example M89

CC-3-V1 7.00% Clearing point [° C.]: 75 CC-4-V1 23.00% Δn [589 nm, 20°C.]: 0.1003 CCH-34 3.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-35 7.00% ε_(⊥)[1 kHz, 20° C.]: 7.1 CCP-3-1 2.50% Δε [1 kHz, 20° C.]: −3.5 CCY-3-O16.00% K₁ [pN, 20° C.]: 15.3 CCY-3-O2 10.00% K₃ [pN, 20° C.]: 16.8CPY-3-O2 10.00% V₀ [pN, 20° C.]: 2.31 CY-3-O2 14.50% γ₁ [mPa s, 20° C.]:105 PY-3-O2 10.00% LTS bulk [−20° C.]: >1000 h PY-1-O2 7.00% LTS bulk[−25° C.]: >1000 h

Example M90

CC-3-V1 7.00% Clearing point [° C.]: 75 CC-4-V1 20.00% Δn [589 nm, 20°C.]: 0.0998 CCH-34 3.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-35 7.00% ε_(⊥)[1 kHz, 20° C.]: 7.1 CCP-3-1 4.50% Δε [1 kHz, 20° C.]: −3.6 CCY-3-O212.50% K₁ [pN, 20° C.]: 15.2 CPY-3-O2 12.50% K₃ [pN, 20° C.]: 17.0CY-3-O2 15.50% V₀ [pN, 20° C.]: 2.30 CY-3-O4 4.50% γ₁ [mPa s, 20° C.]:113 PY-3-O2 13.50%

Example M91

CC-3-V1 7.50% Clearing point [° C.]: 75.5 CC-4-V1 23.00% Δn [589 nm, 20°C.]: 0.0993 CCH-25 7.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1 4.40% ε_(⊥)[1 kHz, 20° C.]: 7.1 CCY-3-O1 7.50% Δε [1 kHz, 20° C.]: −3.5 CCY-3-O212.00% K₁ [pN, 20° C.]: 14.6 CPY-3-O2 8.00% K₃ [pN, 20° C.]: 16.2CY-3-O2 13.00% V₀ [pN, 20° C.]: 2.26 PY-1-O2 9.00% γ₁ [mPa s, 20° C.]:107 PY-2-O2 8.00% LTS bulk [−20° C.]: >1000 h LTS bulk [−25° C.]: >1000h

Example M92

CC-3-V1 7.50% Clearing point [° C.]: 74 CC-4-V1 11.00% Δn [589 nm, 20°C.]: 0.0987 CCH-301 10.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-25 6.00% ε_(⊥)[1 kHz, 20° C.]: 6.9 CCH-24 6.00% Δε [1 kHz, 20° C.]: −3.3 CCP-V2-16.00% K₁ [pN, 20° C.]: 13.9 CCY-3-O1 7.00% K₃ [pN, 20° C.]: 15.1CCY-3-O2 11.00% V₀ [pN, 20° C.]: 2.28 CPY-3-O2 12.00% γ₁ [mPa s, 20°C.]: 102 CY-3-O2 6.00% LTS bulk [−20° C.]: >1000 h PY-1-O2 9.50% PY-2-O28.00%

Example M93

CC-3-V1 7.50% Clearing point [° C.]: 75 CC-4-V1 23.00% Δn [589 nm, 20°C.]: 0.0987 CCH-24 5.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-25 5.00% ε_(⊥)[1 kHz, 20° C.]: 6.9 CCP-3-1 3.00% Δε [1 kHz, 20° C.]: −3.4 CCY-3-O17.50% K₁ [pN, 20° C.]: 14.5 CCY-3-O2 11.50% K₃ [pN, 20° C.]: 15.6CPY-3-O2 9.50% V₀ [pN, 20° C.]: 2.27 CY-3-O2 11.00% γ₁ [mPa s, 20° C.]:103 PY-3-O2 4.00% LTS bulk [−20° C.]: >1000 h PY-1-O2 7.00% PY-2-O26.00%

Example M94

CC-3-V1 7.50% Clearing point [° C.]: 76.5 CC-4-V1 23.00% Δn [589 nm, 20°C.]: 0.0993 CCH-24 7.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1 4.50% ε_(⊥)[1 kHz, 20° C.]: 7.1 CCY-3-O1 7.50% Δε [1 kHz, 20° C.]: −3.5 CCY-3-O212.00% K₁ [pN, 20° C.]: 14.4 CPY-3-O2 9.50% K₃ [pN, 20° C.]: 15.9CY-3-O2 12.50% V₀ [pN, 20° C.]: 2.26 PY-3-O2 2.00% γ₁ [mPa s, 20° C.]:108 PY-1-O2 7.00% LTS bulk [−20° C.]: >1000 h PY-2-O2 7.00%

Example M95

CC-3-V1 7.50% Clearing point [° C.]: 73.5 CC-4-V1 20.50% Δn [589 nm, 20°C.]: 0.0989 CCH-24 9.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1 10.50% ε_(⊥)[1 kHz, 20° C.]: 6.9 CCY-3-O1 7.00% Δε [1 kHz, 20° C.]: −3.3 CCY-3-O211.50% K₁ [pN, 20° C.]: 14.9 CY-3-O2 12.00% K₃ [pN, 20° C.]: 15.3B(S)-2O-O5 4.00% V₀ [pN, 20° C.]: 2.27 B(S)-2O-O4 3.00% γ₁ [mPa s, 20°C.]: 94 PP-1-3 3.50% LTS bulk [−20° C.]: >1000 h PY-1-O2 8.00% LTS bulk[−25° C.]: >1000 h PY-2-O2 3.50%

Example M96

CC-3-V1 7.50% Clearing point [° C.]: 75 CC-4-V1 11.00% Δn [589 nm, 20°C.]: 0.0986 CCH-301 10.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-24 6.00% ε_(⊥)[1 kHz, 20° C.]: 7.0 CCH-34 6.00% Δε [1 kHz, 20° C.]: −3.4 CCP-V2-15.00% K₁ [pN, 20° C.]: 14.0 CCY-3-O1 7.00% K₃ [pN, 20° C.]: 15.2CCY-3-O2 11.50% V₀ [pN, 20° C.]: 2.25 CPY-3-O2 12.00% γ₁ [mPa s, 20°C.]: 103 CY-3-O2 6.50% LTS bulk [−20° C.]: >1000 h PY-1-O2 9.50% PY-2-O28.00%

Example M97

CC-3-V1 7.50% Clearing point [° C.]: 75 CC-4-V1 11.00% Δn [589 nm, 20°C.]: 0.0980 CCH-301 10.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-34 6.00% ε_(⊥)[1 kHz, 20° C.]: 7.1 CCH-35 6.00% Δε [1 kHz, 20° C.]: −3.5 CCP-V2-13.00% K₁ [pN, 20° C.]: 14.7 CCY-3-O1 7.00% K₃ [pN, 20° C.]: 16.2CCY-3-O2 11.00% V₀ [pN, 20° C.]: 2.28 CPY-3-O2 11.50% γ₁ [mPa s, 20°C.]: 108 CY-3-O2 11.00% LTS bulk [−20° C.]: >1000 h PY-3-O2 16.00%

Example M98

CC-3-V1 7.50% Clearing point [° C.]: 75 CC-4-V1 11.00% Δn [589 nm, 20°C.]: 0.0978 CCH-301 10.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-34 6.00% ε_(⊥)[1 kHz, 20° C.]: 7.1 CCH-35 6.00% Δε [1 kHz, 20° C.]: −3.5 CCP-3-1 3.00%K₁ [pN, 20° C.]: 14.8 CCY-3-O1 7.00% K₃ [pN, 20° C.]: 16.3 CCY-3-O211.00% V₀ [V, 20° C.]: 2.28 CPY-3-O2 11.50% γ₁ [mPa s, 20° C.]: 108CY-3-O2 11.00% LTS bulk [−20° C.]: >1000 h PY-3-O2 16.00% LTS bulk [−25°C.]: >1000 h

Example M99

CC-3-V1 7.50% Clearing point [° C.]: 74 CC-4-V1 11.00% Δn [589 nm, 20°C.]: 0.0981 CCH-301 16.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCH-24 6.00% ε_(⊥)[1 kHz, 20° C.]: 6.9 CCP-3-1 7.00% Δε [1 kHz, 20° C.]: −3.3 CCY-3-O17.00% K₁ [pN, 20° C.]: 13.7 CCY-3-O2 11.00% K₃ [pN, 20° C.]: 15.5CPY-3-O2 12.00% V₀ [V, 20° C.]: 2.30 CY-3-O2 5.50% γ₁ [mPa s, 20° C.]:103 PY-1-O2 9.00% LTS bulk [−20° C.]: >1000 h PY-2-O2 8.00%

Example M100

CC-3-V1 7.50% Clearing point [° C.]: 74.5 CC-4-V1 11.00% Δn [589 nm, 20°C.]: 0.0997 CCH-301 16.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCH-25 6.00% ε_(⊥)[1 kHz, 20° C.]: 7.1 CCP-V2-1 6.00% Δε [1 kHz, 20° C.]: −3.4 CCY-3-O17.00% K₁ [pN, 20° C.]: 13.9 CCY-3-O2 11.50% K₃ [pN, 20° C.]: 15.7CPY-3-O2 12.00% V₀ [V, 20° C.]: 2.28 CY-3-O2 5.50% γ₁ [mPa s, 20° C.]:106 PY-1-O2 9.50% LTS bulk [−20° C.]: >1000 h PY-2-O2 8.00%

Example M101

CC-3-V1 7.50% Clearing point [° C.]: 75.5 CC-4-V1 11.00% Δn [589 nm, 20°C.]: 0.0996 CCH-301 10.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCH-34 6.00% ε_(⊥)[1 kHz, 20° C.]: 7.2 CCH-35 6.00% Δε [1 kHz, 20° C.]: −3.5 CCP-V2-13.50% K₁ [pN, 20° C.]: 14.4 CCY-3-O1 7.00% K₃ [pN, 20° C.]: 16.0CCY-3-O2 11.00% V₀ [pN, 20° C.]: 2.26 CPY-3-O2 12.00% γ₁ [mPa s, 20°C.]: 105 CY-3-O2 8.50% PY-1-O2 9.00% PY-2-O2 8.50%

Example M102

CCP-V-1 12.00% Clearing point [° C.]: 74 CCP-V2-1 6.00% Δn [589 nm, 20°C.]: 0.1039 CCY-4-O2 12.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CPY-2-O2 9.50%ε_(⊥) [1 kHz, 20° C.]: 6.5 B(S)-2O-O4 0.50% Δε [1 kHz, 20° C.]: −2.9CC-3-V1 11.00% K₁ [pN, 20° C.]: 13.2 CC-4-V1 3.00% K₃ [pN, 20° C.]: 14.9CCH-24 4.00% V₀ [pN, 20° C.]: 2.39 CCH-35 6.50% γ₁ [mPa s, 20° C.]: 98CY-3-O2 10.00% LTS bulk [−20° C.]: >1000 h PCH-301 9.00% LTS bulk [−25°C.]: >1000 h PY-1-O2 10.00% PY-2-O2 6.50%

Example M103

BCH-32 8.00% Clearing point [° C.]: 75.5 CCH-23 15.00% Δn [589 nm, 20°C.]: 0.1166 CC-4-V1 12.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1 4.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CCY-4-O2 6.00% Δε [1 kHz, 20° C.]: −3.1CPY-2-O2 10.00% K₁ [pN, 20° C.]: 13.5 CPY-3-O2 10.00% K₃ [pN, 20° C.]:14.5 CY-3-O2 13.00% V₀ [pN, 20° C.]: 2.30 PCH-301 5.50% γ₁ [mPa s, 20°C.]: 111 PY-1-O2 9.00% LTS bulk [−20° C.]: >1000 h PP-1-2V1 2.50% LTSbulk [−25° C.]: >1000 h PGIY-2-O4 4.50%

Example M104

B-2O-O5 4.00% Clearing point [° C.]: 74 BCH-32 8.00% Δn [589 nm, 20°C.]: 0.1090 CC-3-V1 9.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CC-4-V1 20.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CCP-3-1 7.50% Δε [1 kHz, 20° C.]: −3.1CCP-V2-1 5.00% K₁ [pN, 20° C.]: 14.1 CCY-3-O2 9.00% K₃ [pN, 20° C.]:16.2 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.40 CPY-3-O 3.00% γ₁ [mPa s, 20°C.]: 100 CY-3-O2 14.50% LTS bulk [−20° C.]: >1000 h PCH-301 3.50% LTSbulk [−25° C.]: >1000 h PY-1-O2 8.00% PY-2-O2 7.50%

Example M105

BCH-32 8.00% Clearing point [° C.]: 75 CC-3-V1 9.00% Δn [589 nm, 20°C.]: 0.1097 CC-4-V1 17.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1 3.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CCP-V2-1 5.00% Δε [1 kHz, 20° C.]: −3.2CCY-3-O1 3.50% K₁ [pN, 20° C.]: 13.9 CCY-3-O2 10.50% K₃ [pN, 20° C.]:16.5 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.40 CPY-3-O2 5.50% γ₁ [mPa s, 20°C.]: 107 CY-3-O2 14.50% LTS bulk [−20° C.]: >1000 h PCH-301 6.00% LTSbulk [−25° C.]: >1000 h PY-1-O2 8.50% PY-2-O2 8.50%

Example M106

BCH-32 5.00% Clearing point [° C.]: 75 CC-3-V1 6.00% Δn [589 nm, 20°C.]: 0.1064 CC-4-V1 17.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1 8.00%ε_(⊥) [1 kHz, 20° C.]: 6.9 CCP-3-3 3.00% Δε [1 kHz, 20° C.]: −3.3CCY-3-1 2.00% K₁ [pN, 20° C.]: 14.3 CCY-3-O2 10.50% K₃ [pN, 20° C.]:16.6 CCY-4-O2 5.00% V₀ [pN, 20° C.]: 2.36 CPY-3-O2 3.50% γ₁ [mPa s, 20°C.]: 117 CY-3-O2 15.50% LTS bulk [−20° C.]: >1000 h PCH-301 5.50% LTSbulk [−25° C.]: >1000 h PY-1-O4 6.00% PY-3-O2 12.50%

Example M107

BCH-32 5.00% Clearing point [° C.]: 75 CC-3-V1 6.00% Δn [589 nm, 20°C.]: 0.1066 CC-4-V1 18.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCP-3-1 8.00%ε_(⊥) [1 kHz, 20° C.]: 7.0 CCP-3-3 3.00% Δε [1 kHz, 20° C.]: −3.3CCY-3-1 2.00% K₁ [pN, 20° C.]: 13.9 CCY-3-O2 10.50% K₃ [pN, 20° C.]:16.5 CCY-4-O2 5.00% V₀ [pN, 20° C.]: 2.35 CPY-3-O2 4.00% γ₁ [mPa s, 20°C.]: 112 CY-3-O2 15.50% LTS bulk [−20° C.]: >1000 h PCH-301 5.50% LTSbulk [−25° C.]: >1000 h PY-1-O2 9.00% PY-2-O2 8.50%

Example M108

CCP-V-1 12.00% Clearing point [° C.]: 75 CCY-4-O2 6.00% Δn [589 nm, 20°C.]: 0.1042 CPY-2-O2 11.50% ε_(∥) [1 kHz, 20° C.]: 3.5 CPY-3-O2 6.50%ε_(⊥) [1 kHz, 20° C.]: 6.5 CC-3-V1 11.00% Δε [1 kHz, 20° C.]: −2.9CC-4-V1 15.00% K₁ [pN, 20° C.]: 13.3 CCH-34 5.50% K₃ [pN, 20° C.]: 15.4CY-3-O2 14.50% V₀ [pN, 20° C.]: 2.41 PCH-301 7.00% γ₁ [mPa s, 20° C.]:97 PY-1-O2 10.00% LTS bulk [−20° C.]: >1000 h PY-2-O2 1.00%

Example M109

B-2O-O5 4.00% Clearing point [° C.]: 74.5 BCH-32 7.00% Δn [589 nm, 20°C.]: 0.1088 CC-3-V1 8.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-4-V1 14.00%ε_(⊥) [1 kHz, 20° C.]: 6.9 CC-1V-V2 14.00% Δε [1 kHz, 20° C.]: −3.3CCP-3-1 8.00% K₁ [pN, 20° C.]: 14.7 CCY-3-O2 11.00% K₃ [pN, 20° C.]:16.9 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.41 CPY-3-O2 3.00% γ₁ [mPa s, 20°C.]: 99 CY-3-O2 14.50% LTS bulk [−20° C.]: >1000 h PY-1-O2 8.00% LTSbulk [−25° C.]: >1000 h PY-2-O2 7.50%

Example M110

B-2O-O5 4.00% Clearing point [° C.]: 75 BCH-32 8.00% Δn [589 nm, 20°C.]: 0.1080 CC-3-V1 8.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-4-V1 15.00%ε_(⊥) [1 kHz, 20° C.]: 6.5 CC-2V-V2 15.00% Δε [1 kHz, 20° C.]: −2.9CCP-3-1 8.00% K₁ [pN, 20° C.]: 14.4 CCY-3-O2 9.00% K₃ [pN, 20° C.]: 15.2CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.41 CPY-3-O2 4.00% γ₁ [mPa s, 20° C.]:92 CY-3-O2 12.00% LTS bulk [−20° C.]: >1000 h PY-1-O2 8.00% PY-2-O28.00%

Example M111

BCH-32 4.00% Clearing point [° C.]: 76 CC-3-V1 7.00% Δn [589 nm, 20°C.]: 0.1090 CC-4-V1 14.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-1V-V2 14.00%ε_(⊥) [1 kHz, 20° C.]: 6.9 CCP-3-1 7.50% Δε [1 kHz, 20° C.]: −3.3CCY-3-O1 1.50% K₁ [pN, 20° C.]: 14.6 CCY-3-O2 10.50% K₃ [pN, 20° C.]:17.6 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.44 CPY-3-O2 7.50% γ₁ [mPa s, 20°C.]: 104 CY-3-O2 14.50% LTS bulk [−20° C.]: >1000 h PY-1-O2 9.50% LTSbulk [−25° C.]: >1000 h PY-2-O2 9.00%

Example M112

BCH-32 5.50% Clearing point [° C.]: 75.5 CC-3-V1 7.00% Δn [589 nm, 20°C.]: 0.1086 CC-4-V1 14.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-2V-V2 14.00%ε_(⊥) [1 kHz, 20° C.]: 6.5 CCP-3-1 9.00% Δε [1 kHz, 20° C.]: −3.0CCY-3-O2 8.00% K₁ [pN, 20° C.]: 14.3 CLY-3-O2 1.00% K₃ [pN, 20° C.]:15.8 CPY-3-O2 9.00% V₀ [pN, 20° C.]: 2.43 CY-3-O2 14.50% γ₁ [mPa s, 20°C.]: 97 PY-1-O2 9.00% LTS bulk [−20° C.]: >1000 h PY-2-O2 9.00% LTS bulk[−25° C.]: >1000 h

Example M113

CCP-V-1 12.00% Clearing point [° C.]: 74 CCY-4-O2 9.00% Δn [589 nm, 20°C.]: 0.1035 CPY-2-O2 12.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CPY-3-O2 3.00%ε_(⊥) [1 kHz, 20° C.]: 6.4 CC-3-V1 11.00% Δε [1 kHz, 20° C.]: −2.9CC-4-V1 15.00% K₁ [pN, 20° C.]: 13.0 CCH-34 4.50% K₃ [pN, 20° C.]: 14.9CY-3-O2 12.00% V₀ [pN, 20° C.]: 2.40 PCH-301 8.50% γ₁ [mPa s, 20° C.]:95 PY-1-O2 10.00% LTS bulk [−20° C.]: >1000 h PY-2-O2 3.00%

Example M114

BCH-32 5.50% Clearing point [° C.]: 75 CCP-V2-1 1.50% Δn [589 nm, 20°C.]: 0.1080 CCY-3-O2 11.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-3-O2 1.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CPY-3-O2 12.00% Δε [1 kHz, 20° C.]: −3.3CC-3-V1 11.00% K₁ [pN, 20° C.]: 15.1 CCH-34 8.00% K₃ [pN, 20° C.]: 16.7CCH-35 5.00% V₀ [pN, 20° C.]: 2.37 CY-3-O2 13.50% γ₁ [mPa s, 20° C.]:109 PCH-301 2.50% LTS bulk [−20° C.]: >1000 h PY-3-O2 18.00% CC-4-V111.00%

Example M115

BCH-32 4.00% Clearing point [° C.]: 74.50 CC-3-V1 7.00% Δn [589 nm, 20°C.]: 0.1089 CC-4-V1 14.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-1V-V2 14.00%ε_(⊥) [1 kHz, 20° C.]: 6.9 CCP-3-1 7.00% Δε [1 kHz, 20° C.]: −3.3CCY-3-O1 2.00% K₁ [pN, 20° C.]: 14.3 CCY-3-O2 10.50% K₃ [pN, 20° C.]:17.3 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.41 CPY-3-O2 7.00% γ₁ [mPa s, 20°C.]: 103 CY-3-O2 14.50% LTS bulk [−20° C.]: >1000 h PY-1-O2 9.50% LTSbulk [−25° C.]: >1000 h PY-2-O2 9.50%

Example M116

BCH-32 5.50% Clearing point [° C.]: 74.50 CC-3-V1 7.00% Δn [589 nm, 20°C.]: 0.1087 CC-4-V1 14.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-2V-V2 14.00%ε_(⊥)[1 kHz, 20° C.]: 6.6 CCP-3-1 8.50% Δε [1 kHz, 20° C.]: −3.0CCY-3-O1 8.50% K₁ [pN, 20° C.]: 14.1 CLY-3-O2 1.00% K₃ [pN, 20° C.]:15.7 CPY-3-O2 8.50% V₀ [pN, 20° C.]: 2.41 CY-3-O2 14.50% γ₁ [mPa s, 20°C.]: 97 PY-1-O2 9.50% LTS bulk [−20° C.]: >1000 h PY-2-O2 9.00% LTS bulk[−25° C.]: >1000 h

Example M117

CCP-3-1 1.00% Clearing point [° C.]: 89 CCP-V-1 10.00% Δn [589 nm, 20°C.]: 0.1031 CCY-3-O2 5.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CLY-2-O4 2.00%ε_(⊥) [1 kHz, 20° C.]: 8.0 CLY-3-O2 8.00% Δε [1 kHz, 20° C.]: −4.3CLY-3-O3 5.00% K₁ [pN, 20° C.]: 19.7 CLY-4-O2 5.00% K₃ [pN, 20° C.]:16.5 CPY-3-O2 0.50% V₀ [pN, 20° C.]: 2.07 PGIY-2-O4 3.50% γ₁ [mPa s, 20°C.]: 114 B(S)-2O-O4 4.00% B(S)-2O-O5 5.00% B(S)-2O-O6 3.00% CC-3-V18.00% CC-4-V1 20.00% CCH-34 5.00% CCH-35 5.00% Y-4O-O4 10.00%

Example M118

CCY-2-1 5.00% Clearing point [° C.]: 88 CCY-3-1 10.00% Δn [589 nm, 20°C.]: 0.1035 CCY-3-O2 4.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CLY-2-O4 2.00%ε_(⊥) [1 kHz, 20° C.]: 7.9 CLY-3-O2 8.00% Δε [1 kHz, 20° C.]: −4.2CLY-3-O3 5.00% K₁ [pN, 20° C.]: 20.2 CLY-4-O2 2.00% K₃ [pN, 20° C.]:16.7 PYP-2-3 5.00% V₀ [pN, 20° C.]: 2.10 B(S)-2O-O4 4.00% γ₁ [mPa s, 20°C.]: 121 B(S)-2O-O5 5.00% B(S)-2O-O6 3.00% CC-3-V1 8.00% CC-4-V1 21.00%CCH-34 5.00% CCH-35 5.00% Y-4O-O4 8.00%

Example M119

CCP-3-1 8.50% Clearing point [° C.]: 111.5 CCP-V-1 10.00% Δn [589 nm,20° C.]: 0.1024 CCY-3-1 5.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCY-3-O1 5.00%ε_(⊥) [1 kHz, 20° C.]: 8.4 CCY-3-O2 10.00% Δε [1 kHz, 20° C.]: −4.7CCY-3-O3 10.00% K₁ [pN, 20° C.]: 22.0 CCY-5-O2 8.00% K₃ [pN, 20° C.]:20.0 CLY-3-O3 1.00% V₀ [pN, 20° C.]: 2.17 B(S)-2O-O4 4.00% γ₁ [mPa s,20° C.]: 190 B(S)-2O-O5 5.00% B(S)-2O-O6 3.00% CCH-34 5.00% CC-4-V118.00% Y-4O-O4 7.50%

Example M120

CCP-V-1 10.00% Clearing point [° C.]: 11.5 CCY-3-1 7.00% Δn [589 nm, 20°C.]: 0.1018 CCY-3-O1 7.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCY-3-O2 9.00%ε_(⊥) [1 kHz, 20° C.]: 8.6 CCY-3-O3 9.00% Δε [1 kHz, 20° C.]: −5.0CCY-5-O2 8.00% K₁ [pN, 20° C.]: 22.2 CLY-3-O3 5.00% K₃ [pN, 20° C.]:19.7 B(S)-2O-O4 4.00% V₀ [pN, 20° C.]: 2.11 B(S)-2O-O5 5.00% γ₁ [mPa s,20° C.]: 192 B(S)-2O-O6 3.00% CCH-34 5.00% CC-4-V1 22.00% Y-4O-O4 6.00%

Example M121

CCP-3-1 10.00% Clearing point [° C.]: 85 CCP-V-1 10.00% Δn [589 nm, 20°C.]: 0.1033 CCY-3-O1 5.00% ε_(∥) [1 kHz, 20° C.]: 3.9 CCY-3-O2 5.00%ε_(⊥) [1 kHz, 20° C.]: 8.2 CLY-2-O4 2.00% Δε [1 kHz, 20° C.]: −4.3CLY-5-O2 1.50% K₁ [pN, 20° C.]: 16.6 CPY-3-O2 7.50% K₃ [pN, 20° C.]:16.7 B(S)-2O-O4 4.00% V₀ [pN, 20° C.]: 2.07 B(S)-2O-O5 5.00% γ₁ [mPa s,20° C.]: 119 B(S)-2O-O6 3.00% CC-3-V1 7.00% CC-4-V1 18.00% CCH-34 3.50%CY-3-O2 10.00% Y-4O-O4 8.50%

Example M122

CCP-V-1 8.50% Clearing point [° C.]: 85 CCY-2-1 5.00% Δn [589 nm, 20°C.]: 0.1030 CCY-3-1 5.00% ε_(∥) [1 kHz, 20° C.]: 3.9 CCY-3-O1 4.50%ε_(⊥) [1 kHz, 20° C.]: 8.2 CLY-3-O2 9.00% Δε [1 kHz, 20° C.]: −4.4CLY-2-O4 9.00% K₁ [pN, 20° C.]: 18.1 PYP-2-3 5.00% K₃ [pN, 20° C.]: 15.2B(S)-2O-O4 4.00% V₀ [pN, 20° C.]: 1.97 B(S)-2O-O5 5.00% γ₁ [mPa s, 20°C.]: 121 B(S)-2O-O6 3.00% CC-3-V1 7.00% CC-4-V1 15.00% CCH-34 5.00%CCH-35 5.00% Y-4O-O4 10.00%

Example M123

BCH-32 5.50% Clearing point [° C.]: 74.5 CC-3-V1 7.00% Δn [589 nm, 20°C.]: 0.1087 CC-4-V1 14.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-2V-V2 14.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CCP-3-1 7.50% Δε [1 kHz, 20° C.]: −3.0CCY-3-O2 8.50% K₁ [pN, 20° C.]: 14.8 CLY-3-O2 1.00% K₃ [pN, 20° C.]:16.1 CPY-3-O2 8.50% V₀ [pN, 20° C.]: 2.43 CY-3-O2 15.50% γ₁ [mPa s, 20°C.]: 102 PY-3-O2 18.50%

Example M124

BCH-32 5.50% Clearing point [° C.]: 74.5 CC-3-V1 7.00% Δn [589 nm, 20°C.]: 0.1091 CC-4-V1 14.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CC-2V-V2 14.00%ε_(⊥) [1 kHz, 20° C.]: 7.0 CCP-3-1 5.00% Δε [1 kHz, 20° C.]: −3.3CCY-3-O2 12.00% K₁ [pN, 20° C.]: 14.2 CLY-3-O2 1.00% K₃ [pN, 20° C.]:15.8 CPY-3-O2 8.50% V₀ [pN, 20° C.]: 2.31 CY-3-O2 14.50% γ₁ [mPa s, 20°C.]: 100 PY-1-O2 9.50% PY-2-O2 9.00%

Example M125

BCH-32 2.00% Clearing point [° C.]: 75 CC-3-V1 7.00% Δn [589 nm, 20°C.]: 0.1095 CC-4-V1 14.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CC-2V-V2 14.00%ε_(⊥) [1 kHz, 20° C.]: 7.3 CCP-3-1 5.00% Δε [1 kHz, 20° C.]: −3.6CCY-3-O2 12.00% K₁ [pN, 20° C.]: 14.3 CLY-3-O2 1.00% K₃ [pN, 20° C.]:16.3 CPY-3-O2 12.00% V₀ [pN, 20° C.]: 2.24 CY-3-O2 14.50% γ₁ [mPa s, 20°C.]: 107 PY-1-O2 9.50% PY-2-O2 9.00%

Example M126

BCH-32 1.00% Clearing point [° C.]: 74.50 CCP-V2-1 3.00% Δn [589 nm, 20°C.]: 0.1076 CCY-3-O2 11.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CLY-3-O2 1.00%ε_(⊥) [1 kHz, 20° C.]: 6.9 CPY-3-O2 12.00% Δε [1 kHz, 20° C.]: −3.3CC-3-V1 11.00% K₁ [pN, 20° C.]: 15.7 CCH-34 8.00% K₃ [pN, 20° C.]: 16.7CCH-35 5.00% V₀ [pN, 20° C.]: 2.36 CY-3-O2 6.50% γ₁ [mPa s, 20° C.]: 102PY-3-O2 9.50% PY-1-O2 9.00% PY-2-O2 7.00% CC-4-V1 17.00%

Example M127

BCH-32 2.50% Clearing point [° C.]: 73.40 CCP-V2-1 4.00% Δn [589 nm, 20°C.]: 0.1063 CCY-3-O2 11.50% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-3-O2 1.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CPY-3-O2 12.00% Δε [1 kHz, 20° C.]: −3.2CC-3-V1 11.00% K₁ [pN, 20° C.]: 14.8 CCH-24 8.00% K₃ [pN, 20° C.]: 15.9CCH-35 4.00% V₀ [pN, 20° C.]: 2.36 CY-3-O2 6.50% γ₁ [mPa s, 20° C.]: 102PY-3-O2 8.00% PY-1-O2 7.50% PY-2-O2 7.00% CC-4-V1 17.00%

Example M128

CCP-3-1 5.00% Clearing point [° C.]: 87 CCP-V-1 6.00% Δn [589 nm, 20°C.]: 0.1022 CLY-2-O4 2.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CLY-3-O2 8.00%ε_(⊥) [1 kHz, 20° C.]: 8.0 CLY-3-O3 5.00% Δε [1 kHz, 20° C.]: −4.3CLY-4-O2 5.00% K₁ [pN, 20° C.]: 18.6 CLY-5-O2 3.00% K₃ [pN, 20° C.]:16.4 CPY-3-O2 6.50% V₀ [pN, 20° C.]: 2.06 B(S)-2O-O4 4.00% γ₁ [mPa s,20° C.]: 111 B(S)-2O-O5 5.00% B(S)-2O-O6 3.00% CC-3-V1 8.00% CC-4-V120.00% CCH-23 9.50% Y-4O-O4 10.00%

Example M129

CCP-3-1 7.00% Clearing point [° C.]: 84 CCP-V-1 4.00% Δn [589 nm, 20°C.]: 0.1016 CLY-2-O4 2.00% ε_(∥) [1 kHz, 20° C.]: 3.8 CLY-3-O2 8.00%ε_(⊥) [1 kHz, 20° C.]: 8.0 CLY-3-O3 5.00% Δε [1 kHz, 20° C.]: −4.3CLY-4-O2 5.00% K₁ [pN, 20° C.]: 18.0 CLY-5-O2 3.00% K₃ [pN, 20° C.]:16.5 CPY-3-O2 6.50% V₀ [pN, 20° C.]: 2.08 B(S)-2O-O4 4.00% γ₁ [mPa s,20° C.]: 109 B(S)-2O-O5 5.00% B(S)-2O-O6 3.00% CC-3-V1 8.00% CC-4-V120.00% CCH-13 9.50% Y-4O-O4 10.00%

Example M130

BCH-32 6.50% Clearing point [° C.]: 74.50 CCP-3-1 2.00% Δn [589 nm, 20°C.]: 0.1080 CCY-3-O2 11.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCY-4-O2 2.00%ε_(⊥) [1 kHz, 20° C.]: 7.1 CPY-3-O2 12.00% Δε [1 kHz, 20° C.]: −3.5CCH-34 6.00% K₁ [pN, 20° C.]: 14.6 CCH-35 4.50% K₃ [pN, 20° C.]: 15.7CC-4-V1 19.00% V₀ [pN, 20° C.]: 2.25 CY-3-O2 15.00% γ₁ [mPa s, 20° C.]:115 CY-5-O2 1.00% PCH-301 5.00% PY-3-O2 16.00%

Example M131

CCP-V-1 10.50% Clearing point [° C.]: 86.5 CLY-2-O4 3.00% Δn [589 nm,20° C.]: 0.1019 CLY-3-O2 8.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CLY-3-O3 5.00%ε_(⊥) [1 kHz, 20° C.]: 7.9 CLY-4-O2 5.00% Δε [1 kHz, 20° C.]: −4.2CLY-5-O2 4.50% K₁ [pN, 20° C.]: 17.8 B(S)-2O-O4 4.00% K₃ [pN, 20° C.]:17.1 B(S)-2O-O5 4.00% V₀ [pN, 20° C.]: 2.14 B(S)-2O-O6 3.00% γ₁ [mPa s,20° C.]: 106 CC-3-V1 8.00% CC-4-V1 16.00% CC-1V-V2 15.00% CY-3-O2 5.00%Y-4O-O4 9.00%

Example M132

CCP-V-1 8.50% Clearing point [° C.]: 90 CCY-3-O2 5.00% Δn [589 nm, 20°C.]: 0.1013 CLY-2-O4 3.50% ε_(∥) [1 kHz, 20° C.]: 3.7 CLY-3-O2 8.00%ε_(⊥) [1 kHz, 20° C.]: 8.2 CLY-3-O3 5.00% Δε [1 kHz, 20° C.]: −4.4CLY-4-O2 5.00% K₁ [pN, 20° C.]: 18.8 CLY-5-O2 5.00% K₃ [pN, 20° C.]:16.6 B(S)-2O-O4 3.00% V₀ [pN, 20° C.]: 2.04 B(S)-2O-O5 4.00% γ₁ [mPa s,20° C.]: 115 B(S)-2O-O6 3.00% CC-3-V1 8.00% CC-4-V1 15.00% CC-2V-V214.00% CY-3-O2 4.00% Y-4O-O4 9.00%

Example M133

BCH-32 4.50% Clearing point [° C.]: 74 CCP-V2-1 1.50% Δn [589 nm, 20°C.]: 0.1068 CCY-3-O2 11.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-3-O2 1.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CPY-3-O2 12.00% Δε [1 kHz, 20° C.]: −3.2CC-3-V1 11.00% K₁ [pN, 20° C.]: 15.2 CY-3-O2 9.00% K₃ [pN, 20° C.]: 16.3PY-3-O2 7.00% V₀ [pN, 20° C.]: 2.37 PY-1-O2 8.00% γ₁ [mPa s, 20° C.]:103 PY-2-O2 6.00% CC-4-V1 17.00% CCH-25 8.00% CCH-35 4.00%

Example M134

CLP-V-1 9.00% Clearing point [° C.]: 84 CCP-V-1 2.00% Δn [589 nm, 20°C.]: 0.1050 CLY-2-O4 2.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CLY-3-O2 8.00%ε_(⊥) [1 kHz, 20° C.]: 8.0 CLY-3-O3 5.00% Δε [1 kHz, 20° C.]: −4.2CLY-4-O2 5.00% K₁ [pN, 20° C.]: 18.7 CLY-5-O2 3.00% K₃ [pN, 20° C.]:16.3 CPY-3-O2 6.00% V₀ [pN, 20° C.]: 2.07 B(S)-2O-O4 4.00% B(S)-2O-O55.00% B(S)-2O-O6 3.00% CC-3-V1 8.50% CC-4-V1 20.00% CCH-13 9.50% Y-4O-O410.00%

Example M135

CLP-1V-1 7.00% Clearing point [° C.]: 85 CCP-V-1 2.00% ε_(∥) [1 kHz, 20°C.]: 3.7 CLY-2-O4 2.50% ε_(⊥) [1 kHz, 20° C.]: 8.0 CLY-3-O2 8.00% Δε [1kHz, 20° C.]: −4.3 CLY-3-O3 5.00% K₁ [pN, 20° C.]: 18.9 CLY-4-O2 5.00%K₃ [pN, 20° C.]: 17.5 CLY-5-O2 3.00% V₀ [pN, 20° C.]: 2.13 CPY-3-O26.00% B(S)-2O-O4 4.00% B(S)-2O-O5 5.00% B(S)-2O-O6 3.00% CC-3-V1 10.00%CC-4-V1 20.00% CCH-13 9.50% Y-4O-O4 10.00%

Example M136

CC-3-V1 7.50% Clearing point [° C.]: 74.5 CC-4-V1 11.00% Δn [589 nm, 20°C.]: 0.0982 CCH-301 16.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCH-24 6.00% ε_(⊥)[1 kHz, 20° C.]: 6.9 CCP-V2-1 7.00% Δε [1 kHz, 20° C.]: −3.3 CCY-3-O17.00% K₁ [pN, 20° C.]: 13.6 CCY-3-O2 11.00% K₃ [pN, 20° C.]: 15.3CPY-3-O2 12.00% V₀ [pN, 20° C.]: 2.29 CY-3-O2 5.50% γ₁ [mPa s, 20° C.]:102 PY-1-O2 9.00% LTS bulk [−20° C.]: >1000 h PY-2-O2 8.00%

Example M137

CC-3-V1 7.00% Clearing point [° C.]: 74 CC-4-V1 17.00% Δn [589 nm, 20°C.]: 0.0979 CCH-301 12.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-24 6.00% ε_(⊥)[1 kHz, 20° C.]: 6.7 CCP-V2-1 7.00% Δε [1 kHz, 20° C.]: −3.1 CCY-3-O18.00% K₁ [pN, 20° C.]: 14.0 CCY-3-O2 12.00% K₃ [pN, 20° C.]: 15.3CPY-3-O2 7.50% V₀ [pN, 20° C.]: 2.35 CY-3-O2 2.50% γ₁ [mPa s, 20° C.]:97 PY-3-O2 5.00% LTS bulk [−20° C.]: >1000 h PY-1-O2 9.00% LTS bulk[−30° C.]: >1000 h PY-2-O2 7.00%

Example M138

CC-3-V1 7.50% Clearing point [° C.]: 73.5 CC-4-V1 23.00% Δn [589 nm, 20°C.]: 0.0982 CCH-24 7.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1 6.00%ε_(⊥)[1 kHz, 20° C.]: 6.9 CCY-3-O1 7.50% Δε [1 kHz, 20° C.]: −3.4CCY-3-O2 11.50% K₁ [pN, 20° C.]: 14.3 CPY-3-O2 7.50% K₃ [pN, 20° C.]:15.7 CY-3-O2 12.50% V₀ [pN, 20° C.]: 2.28 PY-3-O2 3.00% γ₁ [mPa s, 20°C.]: 103 PY-1-O2 7.00% LTS bulk [−20° C.]: >1000 h PY-2-O2 7.00% LTSbulk [−25° C.]: >1000 h

Example M139

BCH-32 8.00% Clearing point [° C.]: 75 CCH-23 14.00% Δn [589 nm, 20°C.]: 0.1158 CC-4-V1 16.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1 5.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CPY-2-O2 12.00% Δε [1 kHz, 20° C.]: −3.0CPY-3-O2 12.00% K₁ [pN, 20° C.]: 13.4 CY-3-O2 14.00% K₃ [pN, 20° C.]:14.4 PCH-301 5.50% V₀ [pN, 20° C.]: 2.31 PY-1-O2 9.00% γ₁ [mPa s, 20°C.]: 107 PGIY-2-O4 4.50% LTS bulk [−20° C.]: >1000 h

Example M140

BCH-32 8.00% Clearing point [° C.]: 75 CCH-23 16.50% Δn [589 nm, 20°C.]: 0.1161 CC-4-V1 12.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1 5.50%ε_(⊥)[1 kHz, 20° C.]: 6.6 CLY-3-O2 2.00% Δε [1 kHz, 20° C.]: −3.0CPY-2-O2 11.00% K₁ [pN, 20° C.]: 13.4 CPY-3-O2 11.00% K₃ [pN, 20° C.]:14.4 CY-3-O2 13.00% V₀ [pN, 20° C.]: 2.30 PCH-301 6.00% γ₁ [mPa s, 20°C.]: 107 PY-1-O2 9.50% LTS bulk [−20° C.]: >1000 h PGIY-2-O4 5.00%

Example M141

CC-3-V1 7.50% Clearing point [° C.]: 75.5 CC-4-V1 19.00% Δn [589 nm, 20°C.]: 0.0983 CCH-24 8.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-25 7.00% ε_(⊥)[1kHz, 20° C.]: 6.7 CCP-V2-1 4.00% Δε [1 kHz, 20° C.]: −3.2 CCY-3-O1 7.50%K₁ [pN, 20° C.]: 14.6 CCY-3-O2 11.00% K₃ [pN, 20° C.]: 15.1 CPY-3-O210.00% V₀ [pN, 20° C.]: 2.30 CY-3-O2 8.00% γ₁ [mPa s, 20° C.]: 98PY-3-O2 4.00% PY-1-O2 7.00% PY-2-O2 7.00%

Example M142

CC-3-V1 7.50% Clearing point [° C.]: 75 CC-4-V1 23.00% Δn [589 nm, 20°C.]: 0.0981 CCH-24 10.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCP-3-1 4.00% ε_(⊥)[1 kHz, 20° C.]: 6.8 CCY-3-O1 7.50% Δε [1 kHz, 20° C.]: −3.3 CCY-3-O211.50% K₁ [pN, 20° C.]: 14.4 CPY-3-O2 9.00% K₃ [pN, 20° C.]: 15.4CY-3-O2 10.50% V₀ [pN, 20° C.]: 2.29 PY-3-O2 4.00% γ₁ [mPa s, 20° C.]:100 PY-1-O2 7.00% LTS bulk [−20° C.]: >1000 h PY-2-O2 6.00%

Example M143

CC-3-V1 7.50% Clearing point [° C.]: 74 CC-4-V1 20.50% Δn [589 nm, 20°C.]: 0.0977 CCH-24 9.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCP-3-1 11.50%ε_(⊥)[1 kHz, 20° C.]: 6.7 CCY-3-O1 6.50% Δε [1 kHz, 20° C.]: −3.2CCY-3-O2 11.00% K₁ [pN, 20° C.]: 14.9 CY-3-O2 13.50% K₃ [pN, 20° C.]:15.3 B(S)-2O-O5 4.00% V₀ [pN, 20° C.]: 2.32 B(S)-2O-O4 3.00% γ₁ [mPa s,20° C.]: 92 PP-1-3 4.00% LTS bulk [−20° C.]: >1000 h PY-1-O2 6.50%PY-2-O2 3.00%

Example M144

CC-3-V1 7.50% Clearing point [° C.]: 74.5 CC-4-V1 21.00% Δn [589 nm, 20°C.]: 0.0971 CCH-24 6.50% ε_(∥) [1 kHz, 20° C.]: 3.7 CCP-3-1 7.50% ε_(⊥)[1 kHz, 20° C.]: 6.6 CCY-3-O1 7.50% Δε [1 kHz, 20° C.]: −3.0 CCY-3-O212.00% K₁ [pN, 20° C.]: 13.5 CPY-3-O2 11.50% K₃ [pN, 20° C.]: 14.4CY-3-S2 16.00% V₀ [pN, 20° C.]: 2.31 PY-1-O2 6.50% γ₁ [mPa s, 20° C.]:109 PY-2-O2 4.00% LTS bulk [−20° C.]: >1000 h

Example M145

B(S)-2O-O4 4.00% Clearing point [° C.]: 74.3 CC-3-V1 6.00% Δn [589 nm,20° C.]: 0.1020 CC-4-V1 18.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-34 7.00%ε_(⊥) [1 kHz, 20° C.]: 6.9 CCH-35 8.50% Δε [1 kHz, 20° C.]: −3.3CCY-3-O2 10.50% K₁ [pN, 20° C.]: 14.4 CCY-4-O2 5.50% K₃ [pN, 20° C.]:15.6 CLY-3-O2 1.00% V₀ [pN, 20° C.]: 2.27 CPY-3-O2 9.50% γ₁ [mPa s, 20°C.]: 101 CY-3-O2 5.50% PCH-301 8.50% PY-1-O2 8.00% PY-2-O2 8.00%

Example M146

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM145 is mixed with 0.35% of the polymerisable compound of the formula

Example M147

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM1 is mixed with 0.25% of the polymerisable compound of the formula

Example M148

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM2 is mixed with 0.2% of the polymerisable compound of the formula

Example M149

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM5 is mixed with 0.25% of the polymerisable compound of the formula

Example M150

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM11 is mixed with 0.25% of the polymerisable compound of the formula

Example M151

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM17 is mixed with 0.25% of the polymerisable compound of the formula

Example M152

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM18 is mixed with 0.2% of the polymerisable compound of the formula

Example M153

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM19 is mixed with 0.2% of the polymerisable compound of the formula

Example M154

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM20 is mixed with 0.25% of the polymerisable compound of the formula

Example M155

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM21 is mixed with 0.3% of the polymerisable compound of the formula

Example M156

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM21 is mixed with 0.3% of the polymerisable compound of the formula

Example M157

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM22 is mixed with 0.25% of the polymerisable compound of the formula

Example M158

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM22 is mixed with 0.3% of the polymerisable compound of the formula

Example M159

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM22 is mixed with 0.3% of the polymerisable compound of the formula

Example M160

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM23 is mixed with 0.25% of the polymerisable compound of the formula

Example M161

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM25 is mixed with 0.3% of the polymerisable compound of the formula

Example M162

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM30 is mixed with 0.25% of the polymerisable compound of the formula

Example M163

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM31 is mixed with 0.2% of the polymerisable compound of the formula

Example M164

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM32 is mixed with 0.3% of the polymerisable compound of the formula

Example M165

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM36 is mixed with 0.3% of the polymerisable compound of the formula

Example M166

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM37 is mixed with 0.3% of the polymerisable compound of the formula

Example M167

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM37 is mixed with 0.3% of the polymerisable compound of the formula

Example M168

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM40 is mixed with 0.3% of the polymerisable compound of the formula

Example M169

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM41 is mixed with 0.25% of the polymerisable compound of the formula

Example M170

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM44 is mixed with 0.25% of the polymerisable compound of the formula

Example M171

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM44 is mixed with 0.3% of the polymerisable compound of the formula

Example M172

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM52 is mixed with 0.3% of the polymerisable compound of the formula

Example M173

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM52 is mixed with 0.3% of the polymerisable compound of the formula

Example M174

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM52 is mixed with 0.3% of the polymerisable compound of the formula

Example M175

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM52 is mixed with 0.3% of the polymerisable compound of the formula

Example M176

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM52 is mixed with 0.3% of the polymerisable compound of the formula

Example M177

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM52 is mixed with 0.3% of the polymerisable compound of the formula

Example M178

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM55 is mixed with 0.25% of the polymerisable compound of the formula

Example M179

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM58 is mixed with 0.2% of the polymerisable compound of the formula

Example M180

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM89 is mixed with 0.25% of the polymerisable compound of the formula

Example M181

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM90 is mixed with 0.25% of the polymerisable compound of the formula

Example M182

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM91 is mixed with 0.25% of the polymerisable compound of the formula

Example M183

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM92 is mixed with 0.25% of the polymerisable compound of the formula

Example M184

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM92 is mixed with 0.3% of the polymerisable compound of the formula

Example M185

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM95 is mixed with 0.25% of the polymerisable compound of the formula

Example M186

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM96 is mixed with 0.3% of the polymerisable compound of the formula

Example M187

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM97 is mixed with 0.25% of the polymerisable compound of the formula

Example M188

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM98 is mixed with 0.3% of the polymerisable compound of the formula

Example M189

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM99 is mixed with 0.25% of the polymerisable compound of the formula

Example M190

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM99 is mixed with 0.25% of the polymerisable compound of the formula

Example M191

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM100 is mixed with 0.25% of the polymerisable compound of the formula

Example M192

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM100 is mixed with 0.25% of the polymerisable compound of the formula

Example M193

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM101 is mixed with 0.25% of the polymerisable compound of the formula

Example M194

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM102 is mixed with 0.25% of the polymerisable compound of the formula

Example M195

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM103 is mixed with 0.3% of the polymerisable compound of the formula

Example M196

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM104 is mixed with 0.3% of the polymerisable compound of the formula

Example M197

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM105 is mixed with 0.3% of the polymerisable compound of the formula

Example M198

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM105 is mixed with 0.3% of the polymerisable compound of the formula

Example M199

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM106 is mixed with 0.3% of the polymerisable compound of the formula

Example M200

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM107 is mixed with 0.25% of the polymerisable compound of the formula

Example M201

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM108 is mixed with 0.25% of the polymerisable compound of the formula

Example M202

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM109 is mixed with 0.25% of the polymerisable compound of the formula

Examples M1-M202 may additionally also comprise one of the twostabilisers selected from Table C.

The PS-VA mixtures according to the invention comprising a polymerisablecompound (reactive mesogen) exhibit higher polymerisation rates, astable tilt angle and very short response times.

Example M203

CC-3-V1 7.00% Clearing point [° C.]: 75 CC-4-V1 21.00% Δn [589 nm, 20°C.]: 0.0991 CCH-34 4.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-35 4.00% ε_(⊥)[1 kHz, 20° C.]: 8.9 CCP-3-1 12.50% Δε [1 kHz, 20° C.]: −3.3 CCY-3-O28.00% K₁ [pN, 20° C.]: 14.9 CY-3-O2 12.50% K₃ [pN, 20° C.]: 15.2B(S)-2O-O5 4.00% V₀ [pN, 20° C.]: 2.26 B(S)-2O-O4 3.00% γ₁ [mPa s, 20°C.]: 91 PP-1-3 4.00% LTS bulk [−20° C.]: >1000 h Y-4O-O4 5.00% PY-V2-O24.00% CCY-V-O2 8.00% CPY-V-O2 3.00% CPY-V-O4 4.00%

Example M204

CC-4-V1 25.00% Clearing point [° C.]: 80.5 PY-V2-O2 10.00% Δn [589 nm,20° C.]: 0.1087 CCY-V-O2 8.00% Δε [1 kHz, 20° C.]: −6.3 CPY-V-O2 4.00%K₁ [pN, 20° C.]: 12.4 CPY-V-O4 8.00% K₃ [pN, 20° C.]: 16.7 CY-V-O216.00% V₀ [pN, 20° C.]: 1.66 COY-3-O2 2.50% γ₁ [mPa s, 20° C.]: 166CCOY-2-O2 4.00% CCOY-3-O2 4.50% CCOY-V-O2 7.00% CCOY-V-O3 11.00%

Example M205

CC-4-V1 25.00% Clearing point [° C.]: 87 CC-3-V1 9.00% Δn [589 nm, 20°C.]: 0.1034 PY-3-O2 7.00% Δε [1 kHz, 20° C.]: −4.5 CEY-3-O2 15.00% K₁[pN, 20° C.]: 17.4 CCP-3-1 2.00% K₃ [pN, 20° C.]: 19.2 CAIY-3-O2 7.00%V₀ [pN, 20° C.]: 2.21 APY-3-O2 8.00% γ₁ [mPa s, 20° C.]: 178 CCOY-2-O28.00% CCOY-3-O2 14.00% PGP-2-5 5.00%

Example M206

B(S)-2O-O4 4.00% Clearing point [° C.]: 74.5 B(S)-2O-O5 5.00% Δn [589nm, 20° C.]: 0.1341 B(S)-2O-O6 2.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V16.00% ε_(⊥) [1 kHz, 20° C.]: 6.6 CC-4-V1 22.00% Δε [1 kHz, 20° C.]: −3.0CCH-35 4.00% K₁ [pN, 20° C.]: 16.5 PP-1-2V1 2.50% K₃ [pN, 20° C.]: 16.1PP-1-3 7.00% V₀ [pN, 20° C.]: 2.43 PY-1-O2 9.00% γ₁ [mPa s, 20° C.]: 99PY-2-O2 8.50% LTS bulk [−20° C.]: >1000 h BCH-32 5.00% LTS bulk [−25°C.]: >1000 h CCP-3-1 11.00% CPY-3-O2 10.50% PGIY-2-O4 3.00%

Example M207

B(S)-2O-O4 4.00% Clearing point [° C.]: 74.5 B(S)-2O-O5 5.00% Δn [589nm, 20° C.]: 0.1032 B(S)-2O-O6 2.50% Δε [1 kHz, 20° C.]: −3.2 CC-3-V18.00% K₁ [pN, 20° C.]: 16.7 CC-4-V1 22.00% K₃ [pN, 20° C.]: 15.8 CCH-355.00% V₀ [pN, 20° C.]: 2.33 PP-1-2V1 7.50% γ₁ [mPa s, 20° C.]: 99PY-1-O2 8.00% PY-2-O2 6.00% BCH-32 5.00% CCP-3-1 7.00% PGIY-2-O4 4.00%PY-V2-O2 5.00% CCY-V-O2 4.00% CPY-V-O2 3.00% CPY-V-O4 4.00%

Example M208

CC-3-V1 7.00% Clearing point [° C.]: 75 CCH-34 3.00% Δn [589 nm, 20°C.]: 0.0998 CCH-35 7.00% Δε [1 kHz, 20° C.]: −3.6 CC-4-V1 20.00% K₁ [pN,20° C.]: 15.2 CCP-3-1 4.50% K₃ [pN, 20° C.]: 17 CCY-3-O2 12.50% V₀ [V,20° C.]: 2.3 CPY-3-O2 12.50% γ₁ [mPa s, 20° C.]: 113 CY-3-O2 15.50%CY-3-O4 4.50% PY-3-O2 13.50%

Example M209

CC-3-V1 7.00% Clearing point [° C.]: 76 CCH-34 3.00% Δn [589 nm, 20°C.]: 0.1002 CCH-35 7.00% Δε [1 kHz, 20° C.]: −3.6 CC-4-V1 20.00% K₁ [pN,20° C.]: 15.6 CCP-3-1 4.50% K₃ [pN, 20° C.]: 17.1 CCY-3-O2 12.50% V₀ [V,20° C.]: 2.32 CPY-3-O2 12.50% γ₁ [mPa s, 20° C.]: 111 CY-3-O2 15.50%CY-3-O4 4.50% PY-3-O2 5.50% PY-V2-O2 8.00%

Example M210

CC-3-V1 7.00% Clearing point [° C.]: 73 CCH-34 3.00% Δn [589 nm, 20°C.]: 0.0987 CCH-35 7.00% Δε [1 kHz, 20° C.]: −3.6 CC-4-V1 20.00% K₁ [pN,20° C.]: 14.9 CCP-3-1 4.50% K₃ [pN, 20° C.]: 16.2 CCY-3-O2 3.50% V₀ [V,20° C.]: 2.28 CPY-3-O2 12.50% γ₁ [mPa s, 20° C.]: 110 CY-3-O2 15.50%CY-3-O4 4.50% PY-3-O2 13.50% CCY-V-O2 9.00%

Example M211

CC-3-V1 7.00% Clearing point [° C.]: 72.5 CCH-34 3.00% Δn [589 nm, 20°C.]: 0.0999 CCH-35 7.00% Δε [1 kHz, 20° C.]: −3.6 CC-4-V1 20.00% K₁ [pN,20° C.]: 14.4 CCP-3-1 4.50% K₃ [pN, 20° C.]: 15.7 CCY-3-O2 12.50% V₀ [V,20° C.]: 2.23 CY-3-O2 15.50% γ₁ [mPa s, 20° C.]: 108 CY-3-O4 4.50%PY-3-O2 13.50% CPY-V-O2 8.00% CPY-V-O4 4.50%

Example M212

CC-3-V1 7.00% Clearing point [° C.]: 72 CCH-34 3.00% Δn [589 nm, 20°C.]: 0.0998 CCH-35 7.00% Δε [1 kHz, 20° C.]: −3.6 CC-4-V1 20.00% K₁ [pN,20° C.]: 14.4 CCP-3-1 4.50% K₃ [pN, 20° C.]: 16 CPY-3-O2 6.00% V₀ [V,20° C.]: 2.18 CY-3-O2 15.50% γ₁ [mPa s, 20° C.]: 115 CY-3-O4 4.50%PY-3-O2 5.50% PY-V2-O2 8.00% CCY-V-O2 9.00% CAIY-3-O2 5.00% APY-3-O25.00%

Example M213

CC-3-V1 7.00% Clearing point [° C.]: 73.5 CCH-34 3.00% Δn [589 nm, 20°C.]: 0.1009 CCH-35 7.00% Δε [1 kHz, 20° C.]: −3.6 CC-4-V1 20.00% K₁ [pN,20° C.]: 14.7 CCP-3-1 4.50% K₃ [pN, 20° C.]: 16.6 CCY-3-O2 9.00% V₀ [V,20° C.]: 2.21 CPY-3-O2 6.00% γ₁ [mPa s, 20° C.]: 118 CY-3-O2 15.50%CY-3-O4 4.50% PY-3-O2 5.50% PY-V2-O2 8.00% CAIY-3-O2 5.00% APY-3-O25.00%

Example M214

CC-3-V1 7.00% Clearing point [° C.]: 70.5 CCH-34 3.00% Δn [589 nm, 20°C.]: 0.0991 CCH-35 7.00% Δε [1 kHz, 20° C.]: −3.6 CC-4-V1 20.00% K₁ [pN,20° C.]: 14 CCP-3-1 4.50% K₃ [pN, 20° C.]: 15.9 CPY-3-O2 6.00% V₀ [V,20° C.]: 2.17 CY-3-O2 15.50% γ₁ [mPa s, 20° C.]: 117 CY-3-O4 4.50%PY-3-O2 13.50% CCY-V-O2 9.00% CAIY-3-O2 5.00% APY-3-O2 5.00%

Example M215

CCP-3-1 5.00% Clearing point [° C.]: 84.5 CCP-V-1 3.00% Δn [589 nm, 20°C.]: 0.1008 CCP-V2-1 5.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCY-3-O2 8.00%ε_(⊥) [1 kHz, 20° C.]: 7.6 CLY-3-O2 7.00% Δε [1 kHz, 20° C.]: −3.9CLY-4-O2 4.50% K₁ [pN, 20° C.]: 18.3 CLY-5-O2 4.00% K₃ [pN, 20° C.]:16.7 B(S)-2O-O4 4.50% V₀ [V, 20° C.]: 2.18 B(S)-2O-O5 5.00% γ₁ [mPa s,20° C.]: 117 B-2O-O5 2.00% CC-4-V1 20.00% CCH-23 9.20% CCH-35 4.00%CY-3-O2 10.50% PP-1-3 4.00% Y-4O-O4 4.00% CCQU-3-F 0.30%

Example M216

CCP-3-1 5.50% Clearing point [° C.]: 89 CCP-V-1 11.00% Δn [589 nm, 20°C.]: 0.1030 CLY-2-O4 2.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CLY-3-O2 6.00%ε_(⊥) [1 kHz, 20° C.]: 7.6 CLY-3-O3 4.00% Δε [1 kHz, 20° C.]: −4.0CLY-4-O2 5.00% K₁ [pN, 20° C.]: 18.5 CLY-5-O2 3.00% K₃ [pN, 20° C.]:16.5 CPY-3-O2 6.00% V₀ [V, 20° C.]: 2.17 B(S)-2O-O4 4.00% γ₁ [mPa s, 20°C.]: 110 B(S)-2O-O5 5.00% B(S)-2O-O6 3.00% CC-3-V1 9.00% CC-4-V1 19.00%CCH-23 7.50% Y-4O-O4 10.00%

Example M217

CCP-3-1 9.50% Clearing point [° C.]: 101 CCP-V-1 12.00% Δn [589 nm, 20°C.]: 0.1109 CLY-3-O2 8.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CLY-4-O2 8.00%ε_(⊥) [1 kHz, 20° C.]: 8.0 CLY-5-O2 6.00% Δε [1 kHz, 20° C.]: −4.3CPY-3-O2 6.50% K₁ [pN, 20° C.]: 21.0 B(S)-2O-O4 4.00% K₃ [pN, 20° C.]:19.4 B(S)-2O-O5 5.00% V₀ [V, 20° C.]: 2.23 B(S)-2O-O6 3.00% γ₁ [mPa s,20° C.]: 142 CC-3-V1 8.00% CC-4-V1 20.00% Y-4O-O4 10.00%

Example M218

CLP-V-1 5.00% Clearing point [° C.]: 86.5 CCP-V-1 5.00% Δn [589 nm, 20°C.]: 0.1045 CLY-3-O2 8.00% ε_(∥) [1 kHz, 20° C.]: 3.8 CLY-4-O2 8.00%ε_(⊥) [1 kHz, 20° C.]: 7.9 CLY-5-O2 6.50% Δε [1 kHz, 20° C.]: −4.2CPY-3-O2 6.00% K₁ [pN, 20° C.]: 18.1 B(S)-2O-O4 4.00% K₃ [pN, 20° C.]:16.5 B(S)-2O-O5 5.00% V₀ [V, 20° C.]: 2.10 B(S)-2O-O6 3.00% γ₁ [mPa s,20° C.]: 108 CC-3-V1 8.00% CC-4-V1 20.00% CC-3-V 11.50% Y-4O-O4 10.00%

Example M219

CLP-1V-1 4.00% Clearing point [° C.]: 88 CCP-V-1 5.00% Δn [589 nm, 20°C.]: 0.1055 CLY-3-O2 8.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CLY-4-O2 8.00%ε_(⊥) [1 kHz, 20° C.]: 8.0 CLY-5-O2 7.00% Δε [1 kHz, 20° C.]: −4.2CPY-3-O2 6.50% K₁ [pN, 20° C.]: 18.3 B(S)-2O-O4 4.00% K₃ [pN, 20° C.]:17.3 B(S)-2O-O5 5.00% V₀ [V, 20° C.]: 2.13 B(S)-2O-O6 3.00% γ₁ [mPa s,20° C.]: 112 CC-3-V1 8.00% CC-4-V1 20.00% CC-3-V 11.50% Y-4O-O4 10.00%

Example M220

CVCP-V-O1 4.00% Clearing point [° C.]: 87.5 CCP-V-1 5.00% Δn [589 nm,20° C.]: 0.1033 CLY-3-O2 8.00% ε_(∥) [1 kHz, 20° C.]: 3.8 CLY-4-O2 8.00%ε_(⊥) [1 kHz, 20° C.]: 8.0 CLY-5-O2 7.00% Δε [1 kHz, 20° C.]: −4.2CPY-3-O2 6.50% K₁ [pN, 20° C.]: 17.3 B(S)-2O-O4 4.00% K₃ [pN, 20° C.]:16.5 B(S)-2O-O5 5.00% V₀ [V, 20° C.]: 2.08 B(S)-2O-O6 3.00% γ₁ [mPa s,20° C.]: 110 CC-3-V1 8.00% CC-4-V1 20.00% CC-3-V 11.50% Y-4O-O4 10.00%

Example M221

B(S)-2O-O5 4.00% Clearing point [° C.]: 74.3 CC-3-V1 6.00% Δn [589 nm,20° C.]: 0.1021 CC-4-V1 14.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-34 9.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCP-3-1 8.00% Δε [1 kHz, 20° C.]: −3.1CCY-3-O2 9.00% K₁ [pN, 20° C.]: 13.2 CCY-4-O2 2.50% K₃ [pN, 20° C.]:16.5 CLY-3-O2 1.00% V₀ [V, 20° C.]: 2.41 CPY-3-O2 10.50% γ₁ [mPa s, 20°C.]: 104 CY-3-O2 11.50% PCH-301 15.00% PY-1-O2 8.50% PY-2-O2 1.00%

Example M222

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM221 is mixed with 0.35% of the polymerisable compound of the formula

Example M223

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM221 is mixed with 0.3% of the polymerisable compound of the formula

Example M224

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM221 is mixed with 0.3% of the polymerisable compound of the formula

Example M225

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM221 is mixed with 0.3% of the polymerisable compound of the formula

Example M226

B(S)-2O-O5 4.00% Clearing point [° C.]: 74.3 CC-3-V1 6.00% Δn [589 nm,20° C.]: 0.1019 CC-4-V1 14.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-34 9.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCP-3-1 8.00% Δε [1 kHz, 20° C.]: −3.2CCY-3-O1 2.50% K₁ [pN, 20° C.]: 13.4 CCY-3-O2 10.00% K₃ [pN, 20° C.]:16.7 CPY-3-O2 10.50% V₀ [V, 20° C.]: 2.35 CY-3-O2 11.50% γ₁ [mPa s, 20°C.]: 105 PCH-301 15.00% PY-1-O2 9.50%

Example M227

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM226 is mixed with 0.35% of the polymerisable compound of the formula

Example M228

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM226 is mixed with 0.3% of the polymerisable compound of the formula

Example M229

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM226 is mixed with 0.3% of the polymerisable compound of the formula

Example M230

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM226 is mixed with 0.3% of the polymerisable compound of the formula

Example M231

BCH-32 8.00% Clearing point [° C.]: 74.7 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.1120 CC-4-V1 16.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-34 8.00% ε_(⊥)[1 kHz, 20° C.]: 6.7 CCH-35 5.50% Δε [1 kHz, 20° C.]: −3.2 CCY-3-O26.00% K₁ [pN, 20° C.]: 15.1 CPY-2-O2 9.00% K₃ [pN, 20° C.]: 15.3CPY-3-O2 9.00% V₀ [V, 20° C.]: 2.31 CY-3-O2 12.00% γ₁ [mPa s, 20° C.]:108 PY-1-O2 3.50% LTS bulk [h, −20° C.]: >1000 h PY-3-O2 15.00%

Example M232

BCH-32 2.50% Clearing point [° C.]: 74.1 CC-3-V1 8.00% ε_(∥) [1 kHz, 20°C.]: 3.5 CC-4-V1 12.00% ε_(⊥) [1 kHz, 20° C.]: 6.7 CCH-34 8.00% Δε [1kHz, 20° C.]: −3.2 CCH-35 5.00% K₁ [pN, 20° C.]: 15.0 CCY-3-O2 11.50% K₃[pN, 20° C.]: 15.3 CPY-2-O2 11.00% V₀ [V, 20° C.]: 2.31 CPY-3-O2 10.50%γ₁ [mPa s, 20° C.]: 114 CY-3-O2 12.00% LTS bulk [h, −20° C.]: >1000 hPP-1-4 8.50% PY-3-O2 11.00%

Example M233

BCH-32 5.50% Clearing point [° C.]: 74.1 CC-3-V1 8.00% ε_(∥) [1 kHz, 20°C.]: 3.7 CC-4-V1 16.00% ε_(⊥) [1 kHz, 20° C.]: 7.6 CCH-34 8.50% Δε [1kHz, 20° C.]: −3.9 CCY-3-O2 12.00% K₁ [pN, 20° C.]: 14.9 CPY-2-O2 6.00%K₃ [pN, 20° C.]: 16.1 CPY-3-O2 10.00% V₀ [V, 20° C.]: 2.15 CY-3-O215.50% γ₁ [mPa s, 20° C.]: 120 PY-1-O2 4.00% LTS bulk [h, −20°C.]: >1000 h PY-3-O2 14.50%

Example M234

BCH-32 5.00% Clearing point [° C.]: 74.1 CC-3-V1 8.00% ε_(∥) [1 kHz, 20°C.]: 3.8 CC-4-V1 16.00% ε_(⊥) [1 kHz, 20° C.]: 8.0 CCH-34 4.50% Δε [1kHz, 20° C.]: −4.2 CCY-3-O2 12.00% K₁ [pN, 20° C.]: 14.2 CPY-2-O2 10.00%K₃ [pN, 20° C.]: 15.7 CPY-3-O2 9.00% V₀ [V, 20° C.]: 2.03 CY-3-O2 15.50%γ₁ [mPa s, 20° C.]: 133 CY-3-O4 6.50% LTS bulk [h, −20° C.]: >1000 hPY-3-O2 13.50%

Example M235

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM234 is mixed with 0.3% of the polymerisable compound of the formula

Example M236

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM234 is mixed with 0.3% of the polymerisable compound of the formula

Example M237

BCH-32 6.00% Clearing point [° C.]: 73.6 CC-3-V1 4.00% ε_(∥) [1 kHz, 20°C.]: 3.8 CC-4-V1 16.00% ε_(⊥) [1 kHz, 20° C.]: 8.0 CCH-34 9.00% Δε [1kHz, 20° C.]: −4.1 CCY-3-O1 5.00% K₁ [pN, 20° C.]: 14.3 CCY-3-O2 11.00%K₃ [pN, 20° C.]: 15.5 CPY-3-O2 10.00% V₀ [V, 20° C.]: 2.04 CY-3-O214.00% γ₁ [mPa s, 20° C.]: 121 PY-1-O2 5.00% LTS bulk [h, −20°C.]: >1000 h PY-3-O2 12.00% PCH-301 4.00% B(S)-2O-O5 4.00%

Example M238

BCH-32 4.50% Clearing point [° C.]: 74.1 CCP-3-1 4.00% ε_(∥) [1 kHz, 20°C.]: 3.8 CCY-3-O1 9.00% ε_(⊥) [1 kHz, 20° C.]: 7.7 CCY-3-O2 5.00% Δε [1kHz, 20° C.]: −3.9 CPY-3-O2 11.00% K₁ [pN, 20° C.]: 14.0 B(S)-2O-O44.00% K₃ [pN, 20° C.]: 15.8 CC-3-V1 3.00% V₀ [V, 20° C.]: 2.11 CC-4-V117.00% γ₁ [mPa s, 20° C.]: 121 CCH-34 6.00% LTS bulk [h, −20° C.]: >1000h CY-3-O2 13.50% PCH-301 7.50% PY-1-O2 5.50% PY-3-O2 10.00%

Example M239

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM238 is mixed with 0.3% of the polymerisable compound of the formula

Example M240

CCY-3-O2 11.00% Clearing point [° C.]: 75 CPY-2-O2 11.00% Δn [589 nm,20° C.]: 0.1108 CPY-3-O2 8.50% ε_(∥) [1 kHz, 20° C.]: 3.8 B-2O-O5 4.00%ε_(⊥)[1 kHz, 20° C.]: 7.9 CC-3-V1 8.00% Δε [1 kHz, 20° C.]: −4.1 CC-4-V117.00% K₁ [pN, 20° C.]: 15.4 CCH-34 8.00% K₃ [pN, 20° C.]: 15.9 CCH-356.00% V₀ [V, 20° C.]: 2.05 CY-3-O2 8.50% γ₁ [mPa s, 20° C.]: 119 PY-1-O26.00% PY-3-O2 12.00%

Example M241

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM240 is mixed with 0.3% of the polymerisable compound of the formula

Example M242

CC-3-V1 12.00% Clearing point [° C.]: 75.2 CC-4-V1 5.50% Δn [589 nm, 20°C.]: 0.0810 CCH-301 9.50% ε_(∥) [1 kHz, 20° C.]: 3.4 CCH-303 6.00% ε_(⊥)[1 kHz, 20° C.]: 6.2 CCH-34 5.00% Δε [1 kHz, 20° C.]: −2.9 CCH-35 6.50%K₁ [pN, 20° C.]: 14.3 CCY-3-1 3.00% K₃ [pN, 20° C.]: 15.7 CCY-3-O1 7.50%V₀ [V, 20° C.]: 2.47 CCY-3-O2 12.00% γ₁ [mPa s, 20° C.]: 105 CPY-2-O24.50% CPY-3-O2 4.50% CY-3-O2 9.50% CY-3-O4 8.50% PCH-302 5.00% PY-3-O21.00%

Example 243

CC-3-V1 8.00% Clearing point [° C.]: 75 CC-4-V1 20.00% ε_(∥) [1 kHz, 20°C.]: 0.1028 CCH-34 7.00% ε_(⊥) [1 kHz, 20° C.]: 3.5 CCH-35 7.00% Δε [1kHz, 20° C.]: 7.0 CCY-3-O2 10.00% K₁ [pN, 20° C.]: −3.5 CPY-2-O2 8.00%K₃ [pN, 20° C.]: 14.9 CPY-3-O2 11.00% V₀ [V, 20° C.]: 16.1 CY-3-O214.00% γ₁ [mPa s, 20° C.]: 2.28 PY-3-O2 15.00% ε_(∥) [1 kHz, 20° C.]:112 LTS bulk [h, −20° C.]: >1000 h

Example M244

B(S)-2O-O4 2.00% Clearing point [° C.]: 75.2 CC-3-V1 9.00% Δn [589 nm,20° C.]: 0.1025 CC-4-V1 20.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-34 7.00%ε_(⊥) [1 kHz, 20° C.]: 6.9 CCH-35 5.00% Δε [1 kHz, 20° C.]: −3.4CCP-V2-1 3.50% K₁ [pN, 20° C.]: 14.8 CCY-3-O2 4.00% K₃ [pN, 20° C.]:15.6 CPY-2-O2 10.00% V₀ [V, 20° C.]: 2.26 CPY-3-O2 11.00% γ₁ [mPa s, 20°C.]: 108 CY-3-O2 15.00% LTS bulk [h, −20° C.]: >1000 h CY-5-O2 3.50%PY-3-O2 10.00%

Example 245

CY-3-O2 20.00% Clearing point [° C.]: 75 CY-5-O2 9.00% Δn [589 nm, 20°C.]: 0.0827 CCY-3-O2 5.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCY-3-O3 8.00%ε_(⊥) [1 kHz, 20° C.]: 7.3 CCY-4-O2 10.00% Δε [1 kHz, 20° C.]: −3.7CPY-2-O2 10.00% K₁ [pN, 20° C.]: 13.8 CC-5-V 20.00% K₃ [pN, 20° C.]:14.2 CC-3-V1 5.00% V₀ [V, 20° C.]: 2.08 CCH-35 5.00% γ₁ [mPa s, 20° C.]:110 CC-4-V1 8.00%

Example M246

CLP-V-1 5.00% Clearing point [° C.]: 87 CCP-V-1 6.00% Δn [589 nm, 20°C.]: 0.1045 CLY-2-O4 2.00% ε_(∥) [1 kHz, 20° C.]: 3.8 CLY-3-O2 8.00%ε_(⊥) [1 kHz, 20° C.]: 8.1 CLY-3-O3 5.00% Δε [1 kHz, 20° C.]: −4.3CLY-4-O2 5.00% K₁ [pN, 20° C.]: 18.9 CLY-5-O2 3.00% K₃ [pN, 20° C.]:16.1 CPY-3-O2 6.50% V₀ [V, 20° C.]: 2.04 B(S)-2O-O4 4.00% γ₁ [mPa s, 20°C.]: 116 B(S)-2O-O5 5.00% B(S)-2O-O6 3.00% CC-3-V1 8.00% CC-4-V1 20.00%CCH-23 9.50% Y-4O-O4 10.00%

Example M247

CLP-1V-1 5.00% Clearing point [° C.]: 88.5 CCP-V-1 6.00% Δn [589 nm, 20°C.]: 0.1049 CLY-2-O4 2.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CLY-3-O2 8.00%ε_(⊥) [1 kHz, 20° C.]: 8.1 CLY-3-O3 5.00% Δε [1 kHz, 20° C.]: −4.3CLY-4-O2 5.00% K₁ [pN, 20° C.]: 19.2 CLY-5-O2 3.00% K₃ [pN, 20° C.]:17.0 CPY-3-O2 6.50% V₀ [V, 20° C.]: 2.09 B(S)-2O-O4 4.00% γ₁ [mPa s, 20°C.]: 121 B(S)-2O-O5 5.00% B(S)-2O-O6 3.00% CC-3-V1 8.00% CC-4-V1 20.00%CCH-23 9.50% Y-4O-O4 10.00%

Example M248

B(S)-2O-O4 4.00% Clearing point [° C.]: 74.5 B(S)-2O-O5 5.00% Δn [589nm, 20° C.]: 0.1358 CC-3-V 20.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V17.00% ε_(⊥) [1 kHz, 20° C.]: 6.8 CC-4-V1 8.50% Δε [1 kHz, 20° C.]: −3.1PP-1-2V1 4.50% K₁ [pN, 20° C.]: 15.5 PY-1-O2 10.00% K₃ [pN, 20° C.]:16.0 PY-3-O2 6.50% V₀ [V, 20° C.]: 2.38 CCP-3-1 10.00% γ₁ [mPa s, 20°C.]: 94 CPY-3-O2 11.50% LTS bulk [h, −20° C.]: >1000 h PGIY-2-O4 5.00%LTS bulk [h, −25° C.]: >1000 h PYP-2-3 8.00%

Example M249

B(S)-2O-O4 4.00% Clearing point [° C.]: 74 B(S)-2O-O5 5.00% Δn [589 nm,20° C.]: 0.1368 CC-3-V 25.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CC-3-V1 7.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CC-4-V1 1.50% Δε [1 kHz, 20° C.]: −3.2PP-1-2V1 7.00% K₁ [pN, 20° C.]: 15.6 PY-1-O2 10.00% K₃ [pN, 20° C.]:16.0 PY-3-O2 4.50% V₀ [V, 20° C.]: 2.38 CCP-3-1 10.50% γ₁ [mPa s, 20°C.]: 93 CPY-2-O2 4.50% LTS bulk [h, −20° C.]: >1000 h CPY-3-O2 10.00%LTS bulk [h, −25° C.]: >1000 h PGIY-2-O4 6.00% PYP-2-3 5.00%

Example M250

B(S)-2O-O4 4.00% Clearing point [° C.]: 74 B(S)-2O-O5 5.00% Δn [589 nm,20° C.]: 0.1347 CC-3-V 21.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-4-V1 10.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCP-3-1 13.00% Δε [1 kHz, 20° C.]: −3.1CPY-3-O2 10.50% K₁ [pN, 20° C.]: 15.4 CPY-2-O2 4.00% K₃ [pN, 20° C.]:15.7 PP-1-2V1 6.00% V₀ [V, 20° C.]: 2.38 PY-1-O2 8.00% γ₁ [mPa s, 20°C.]: 93 PY-3-O2 10.00% LTS bulk [h, −20° C.]: >1000 h PYP-2-3 8.00%

Example M251

B(S)-2O-O4 4.00% Clearing point [° C.]: 73.5 B(S)-2O-O5 5.00% Δn [589nm, 20° C.]: 0.1334 CC-4-V1 30.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-354.00% ε_(⊥) [1 kHz, 20° C.]: 6.7 CCP-3-1 13.00% Δε [1 kHz, 20° C.]: −3.0CPY-3-O2 7.00% K₁ [pN, 20° C.]: 15.5 PP-1-2V1 3.00% K₃ [pN, 20° C.]:14.9 PY-1-O2 8.00% V₀ [V, 20° C.]: 2.34 PY-2-O2 7.00% γ₁ [mPa s, 20°C.]: 99 PY-3-O2 8.00% LTS bulk [h, −20° C.]: >1000 h PYP-2-3 7.00%PYP-2-4 4.00%

Example M252

CC-3-V1 8.00% Clearing point [° C.]: 72 CC-4-V1 21.00% Δn [589 nm, 20°C.]: 0.1329 CCH-35 6.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1 8.00% ε_(⊥)[1 kHz, 20° C.]: 6.5 CCY-3-O2 8.00% Δε [1 kHz, 20° C.]: −2.9 B(S)-2O-O55.00% K₁ [pN, 20° C.]: 15.3 B(S)-2O-O4 4.00% K₃ [pN, 20° C.]: 14.5PP-1-3 5.00% V₀ [V, 20° C.]: 2.37 PY-1-O2 10.00% γ₁ [mPa s, 20° C.]: 95PY-2-O2 8.00% PYP-2-3 11.00% PYP-2-4 6.00%

Example M253

BCH-32 8.00% Clearing point [° C.]: 73 CCH-23 15.00% Δn [589 nm, 20°C.]: 0.1342 CC-4-V1 12.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1 12.00%ε_(⊥) [1 kHz, 20° C.]: 6.5 CPY-3-O2 9.50% Δε [1 kHz, 20° C.]: −2.9PCH-301 2.50% K₁ [pN, 20° C.]: 15.0 PY-1-O2 10.00% K₃ [pN, 20° C.]: 15.0PY-2-O2 8.00% V₀ [V, 20° C.]: 2.41 PP-1-2V1 7.50% γ₁ [mPa s, 20° C.]: 97PGIY-2-O4 6.00% LTS bulk [h, −25° C.]: >1000 h B(S)-2O-O5 5.00%B(S)-2O-O4 4.00%

Example M254

B(S)-2O-O4 4.00% Clearing point [° C.]: 74 B(S)-2O-O5 5.00% Δn [589 nm,20° C.]: 0.1278 B(S)-2O-O6 2.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-4-V118.00% ε_(⊥) [1 kHz, 20° C.]: 6.7 CCH-35 6.00% Δε [1 kHz, 20° C.]: −3.1PP-1-3 8.00% K₁ [pN, 20° C.]: 16.5 PP-1-4 4.50% K₃ [pN, 20° C.]: 15.8PY-1-O2 10.00% V₀ [V, 20° C.]: 2.38 PY-2-O2 8.00% γ₁ [mPa s, 20° C.]:105 CCP-3-1 13.00% LTS bulk [h, −20° C.]: >1000 h CCP-3-3 7.50% CCY-3-O210.00% PGIY-2-O4 4.00%

Example M255

B(S)-2O-O4 4.00% Clearing point [° C.]: 73 B(S)-2O-O5 5.00% Δn [589 nm,20° C.]: 0.1348 B(S)-2O-O6 2.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-4-V118.00% ε_(⊥) [1 kHz, 20° C.]: 6.6 CCH-35 6.00% Δε [1 kHz, 20° C.]: −3.0PP-1-3 8.00% K₁ [pN, 20° C.]: 16.2 PP-1-4 4.50% K₃ [pN, 20° C.]: 15.5PY-1-O2 10.00% V₀ [V, 20° C.]: 2.38 PY-2-O2 8.00% γ₁ [mPa s, 20° C.]:105 CCP-3-1 13.00% LTS bulk [h, −25° C.]: >1000 h CCP-3-3 7.50% CPY-3-O210.00% PGIY-2-O4 4.00%

Example M256

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM255 is mixed with 0.3% of the polymerisable compound of the formula

Example M257

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM255 is mixed with 0.3% of the polymerisable compound of the formula

Example M258

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM255 is mixed with 0.3% of the polymerisable compound of the formula

Example M259

B(S)-2O-O4 4.00% Clearing point [° C.]: 72.5 B(S)-2O-O5 4.50% Δn [589nm, 20° C.]: 0.1340 B(S)-2O-O6 2.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CC-4-V120.00% ε_(⊥) [1 kHz, 20° C.]: 6.8 CCH-35 5.50% Δε [1 kHz, 20° C.]: −3.1PP-1-3 8.00% K₁ [pN, 20° C.]: 15.7 PY-1-O2 10.00% K₃ [pN, 20° C.]: 15.0PY-2-O2 11.00% V₀ [V, 20° C.]: 2.33 CCP-3-1 11.00% γ₁ [mPa s, 20° C.]:104 CCP-3-3 10.00% CPY-3-O2 5.50% PGIY-2-O4 4.50% PYP-2-3 4.00%

Example M260

B(S)-2O-O4 4.00% Clearing point [° C.]: 75 B(S)-2O-O5 5.00% Δn [589 nm,20° C.]: 0.1340 B(S)-2O-O6 2.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V10.00% ε_(⊥) [1 kHz, 20° C.]: 6.6 CC-3-V1 7.00% Δε [1 kHz, 20° C.]: −3.0CC-4-V1 18.00% K₁ [pN, 20° C.]: 15.8 PP-1-2V1 6.00% K₃ [pN, 20° C.]:15.8 PY-1-O2 9.00% V₀ [V, 20° C.]: 2.42 PY-2-O2 9.00% γ₁ [mPa s, 20°C.]: 91 BCH-32 7.00% CCP-3-1 7.50% CPY-3-O2 11.00% PYP-2-3 4.00%

Example M261

B(S)-2O-O4 4.00% Clearing point [° C.]: 74.5 B(S)-2O-O5 5.00% Δn [589nm, 20° C.]: 0.1343 B(S)-2O-O6 2.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V17.00% ε_(⊥) [1 kHz, 20° C.]: 6.7 CC-4-V1 7.50% Δε [1 kHz, 20° C.]: −3.1CCH-23 16.50% K₁ [pN, 20° C.]: 15.9 PP-1-2V1 7.00% K₃ [pN, 20° C.]: 15.7PY-1-O2 9.00% V₀ [V, 20° C.]: 2.38 PY-2-O2 8.00% γ₁ [mPa s, 20° C.]: 98BCH-32 7.00% CCP-3-1 10.50% CPY-3-O2 11.00% PGIY-2-O4 3.00% PYP-2-32.00%

Example M262

B(S)-2O-O4 4.00% Clearing point [° C.]: 73.5 B(S)-2O-O5 4.00% Δn [589nm, 20° C.]: 0.1338 B(S)-2O-O6 2.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V12.50% ε_(⊥) [1 kHz, 20° C.]: 6.8 CC-4-V1 19.00% Δε [1 kHz, 20° C.]:−3.2 CCP-3-1 13.50% K₁ [pN, 20° C.]: 16.1 CPY-2-O2 5.00% K₃ [pN, 20°C.]: 16.1 CPY-3-O2 8.50% V₀ [V, 20° C.]: 2.38 PP-1-2V1 8.00% γ₁ [mPa s,20° C.]: 96 PY-1-O2 9.00% PY-3-O2 10.00% PYP-2-3 4.00%

Example M263

B(S)-2O-O4 3.50% Clearing point [° C.]: 74 B(S)-2O-O5 4.00% Δn [589 nm,20° C.]: 0.1356 B(S)-2O-O6 3.00% ε_(∥) [1 kHz, 20° C.]: 3.6 BCH-32 8.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CC-4-V1 12.00% Δε [1 kHz, 20° C.]: −3.0CCH-23 14.00% K₁ [pN, 20° C.]: 15.3 CCP-3-1 14.00% K₃ [pN, 20° C.]: 15.0CPY-3-O2 7.50% V₀ [V, 20° C.]: 2.38 PCH-301 3.00% γ₁ [mPa s, 20° C.]: 99PGIY-2-O4 6.00% LTS bulk [h, −20° C.]: >1000 h PP-1-2V1 7.00% PY-1-O29.50% PY-2-O2 8.50%

Example M264

B(S)-2O-O4 3.00% Clearing point [° C.]: 74.5 B(S)-2O-O5 3.00% Δn [589nm, 20° C.]: 0.1341 CC-3-V 13.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V18.00% ε_(⊥) [1 kHz, 20° C.]: 6.7 CC-4-V1 18.00% Δε [1 kHz, 20° C.]: −3.1PP-1-2V1 8.00% K₁ [pN, 20° C.]: 15.6 PY-1-O2 10.00% K₃ [pN, 20° C.]:16.0 PY-3-O2 5.00% V₀ [V, 20° C.]: 2.39 CCP-3-1 3.00% γ₁ [mPa s, 20°C.]: 99 CPY-2-O2 9.00% CPY-3-O2 12.00% PGIY-2-O4 6.50% PYP-2-3 1.50%

Example M265

B(S)-2O-O4 3.00% Clearing point [° C.]: 74.5 B(S)-2O-O5 4.00% Δn [589nm, 20° C.]: 0.1331 CC-3-V 10.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V18.00% ε_(⊥) [1 kHz, 20° C.]: 6.7 CC-4-V1 22.00% Δε [1 kHz, 20° C.]: −3.1PP-1-2V1 8.00% K₁ [pN, 20° C.]: 15.8 PY-1-O2 10.00% K₃ [pN, 20° C.]:16.0 PY-3-O2 5.00% V₀ [V, 20° C.]: 2.40 CCP-3-1 3.00% γ₁ [mPa s, 20°C.]: 98 CPY-2-O2 6.00% CPY-3-O2 12.00% PGIY-2-O4 7.00% PYP-2-3 2.00%

Example M266

CC-3-V1 7.00% Clearing point [° C.]: 74 CCH-35 4.00% Δn [589 nm, 20°C.]: 0.1334 CC-4-V1 19.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCP-3-1 5.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCY-3-O1 6.50% Δε [1 kHz, 20° C.]: −3.0CCY-3-O2 11.00% K₁ [pN, 20° C.]: 16.1 CY-3-O2 1.00% K₃ [pN, 20° C.]:16.1 PP-1-2V1 10.00% V₀ [V, 20° C.]: 2.47 PY-1-O2 8.00% γ₁ [mPa s, 20°C.]: 112 PY-3-O2 7.00% LTS bulk [h, −20° C.]: >1000 h PY-2-O2 7.00%PYP-2-3 6.00% PGIY-2-O4 8.50%

Example M267

CC-4-V1 14.00% Clearing point [° C.]: 73.5 CC-3-V 10.00% Δn [589 nm, 20°C.]: 0.1337 CCP-3-1 12.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCY-3-O1 5.00%ε_(⊥) [1 kHz, 20° C.]: 6.5 CCY-3-O2 11.00% Δε [1 kHz, 20° C.]: −2.9CY-3-O2 2.50% K₁ [pN, 20° C.]: 15.1 PP-1-2V1 10.00% K₃ [pN, 20° C.]:16.3 PY-1-O2 7.50% V₀ [V, 20° C.]: 2.50 PY-3-O2 7.00% γ₁ [mPa s, 20°C.]: 107 PY-2-O2 7.00% LTS bulk [h, −20° C.]: >1000 h PYP-2-3 8.00%PGIY-2-O4 6.00%

Example M268

CC-3-V1 7.00% Clearing point [° C.]: 73 CC-4-V1 22.00% Δn [589 nm, 20°C.]: 0.1342 CCP-3-1 14.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCY-3-O2 4.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CY-3-O2 8.50% Δε [1 kHz, 20° C.]: −3.1PP-1-2V1 8.00% K₁ [pN, 20° C.]: 15.8 PY-1-O2 8.00% K₃ [pN, 20° C.]: 16.5PY-3-O2 7.00% V₀ [V, 20° C.]: 2.46 PYP-2-3 8.00% γ₁ [mPa s, 20° C.]: 102PGIY-2-O4 6.50% LTS bulk [h, −20° C.]: >1000 h B(S)-2O-O4 3.00%B(S)-2O-O5 4.00%

Example M269

CY-3-O4 17.50% Clearing point [° C.]: 86.5 CLY-2-O4 4.00% Δn [589 nm,20° C.]: 0.1087 CLY-3-O2 6.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-3-O3 5.00%ε_(⊥) [1 kHz, 20° C.]: 7.7 CLY-4-O2 4.00% Δε [1 kHz, 20° C.]: −4.2CLY-5-O2 4.00% K₁ [pN, 20° C.]: 17.2 CPY-3-O2 8.00% K₃ [pN, 20° C.]:16.1 PYP-2-3 6.50% V₀ [V, 20° C.]: 2.07 B(S)-2O-O5 4.00% γ₁ [mPa s, 20°C.]: 136 B(S)-2O-O4 4.00% LTS bulk [h, −20° C.]: >1000 h CC-4-V1 19.00%LTS bulk [h, −25° C.]: >1000 h CC-3-V1 8.00% LTS bulk [h, −30°C.]: >1000 h CCH-23 10.00%

Example M270

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM269 is mixed with 0.3% of the polymerisable compound of the formula

Example M271

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM269 is mixed with 0.3% of the polymerisable compound of the formula

Example M272

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM269 is mixed with 0.3% of the polymerisable compound of the formula

Example M273

CCH-23 16.50% Clearing point [° C.]: 76 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.1026 CC-4-V1 22.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-2-O4 4.00%ε_(⊥)[1 kHz, 20° C.]: 7.3 CLY-3-O2 6.00% Δε [1 kHz, 20° C.]: −3.7CLY-3-O3 5.00% K₁ [pN, 20° C.]: 16.3 CLY-4-O2 4.00% K₃ [pN, 20° C.]:15.1 CLY-5-O2 4.00% V₀ [V, 20° C.]: 2.12 CPY-3-O2 3.00% γ₁ [mPa s, 20°C.]: 95 CY-3-O2 4.50% LTS bulk [h, −20° C.]: >1000 h PY-3-O2 6.00%PY-1-O2 9.00% B(S)-2O-O5 4.00% B(S)-2O-O4 4.00%

Example M274

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM273 is mixed with 0.3% of the polymerisable compound of the formula

Example M395

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM273 is mixed with 0.25% of the polymerisable compound of the formula

Example M276

CVCP-V-O1 4.00% Clearing point [° C.]: 89 CCP-V-1 6.50% Δn [589 nm, 20°C.]: 0.1043 CLY-3-O2 8.00% ε_(∥) [1 kHz, 20° C.]: 3.8 CLY-4-O2 8.00%ε_(⊥) [1 kHz, 20° C.]: 8.0 CLY-5-O2 7.00% Δε [1 kHz, 20° C.]: −4.3CPY-3-O2 6.50% K₁ [pN, 20° C.]: 17.5 B(S)-2O-O4 4.00% K₃ [pN, 20° C.]:16.8 B(S)-2O-O5 5.00% V₀ [V, 20° C.]: 2.10 B(S)-2O-O6 3.00% γ₁ [mPa s,20° C.]: 112 CC-3-V1 8.00% CC-4-V1 20.00% CC-3-V 10.00% Y-4O-O4 10.00%

Example M277

CCP-3-1 3.00% Clearing point [° C.]: 88.5 CCP-V-1 2.50% Δn [589 nm, 20°C.]: 0.1061 CLY-3-O2 8.00% ε_(∥) [1 kHz, 20° C.]: 4.3 CLY-4-O2 8.00%ε_(⊥) [1 kHz, 20° C.]: 8.4 CLY-5-O2 7.00% Δε [1 kHz, 20° C.]: −4.1CPY-3-O2 6.50% K₁ [pN, 20° C.]: 17.4 B(S)-2O-O4 4.00% K₃ [pN, 20° C.]:15.9 B(S)-2O-O5 6.00% V₀ [V, 20° C.]: 2.08 B(S)-2O-O6 3.00% γ₁ [mPa s,20° C.]: 115 CC-3-V1 8.00% CC-4-V1 20.00% CC-3-V 6.00% Y-4O-O4 10.00%CCG-V-F 8.00%

Example M278

CCH-23 9.50% Clearing point [° C.]: 75 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.1029 CC-4-V1 20.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-V-1 3.50%ε_(⊥) [1 kHz, 20° C.]: 7.2 CLY-2-O4 4.00% Δε [1 kHz, 20° C.]: −3.7CLY-3-O2 6.00% K₁ [pN, 20° C.]: 15.2 CLY-3-O3 5.00% K₃ [pN, 20° C.]:15.8 CLY-4-O2 4.00% V₀ [V, 20° C.]: 2.20 CLY-5-O2 4.00% γ₁ [mPa s, 20°C.]: 107 CPY-3-O2 6.50% LTS bulk [h, −20° C.]: >1000 h CY-3-O2 12.50%LTS bulk [h, −25° C.]: >1000 h PY-3-O2 8.00% LTS bulk [h, −30°C.]: >1000 h PY-1-O2 9.00%

Example M279

CLP-1V-1 5.50% Clearing point [° C.]: 87 CCP-V-1 7.50% Δn [589 nm, 20°C.]: 0.1085 CLY-3-O2 7.00% ε_(∥) [1 kHz, 20° C.]: 3.8 CLY-4-O2 8.00%ε_(⊥) [1 kHz, 20° C.]: 7.9 CLY-5-O2 4.00% Δε [1 kHz, 20° C.]: −4.1CPY-3-O2 6.00% K₁ [pN, 20° C.]: 18.0 B(S)-2O-O4 4.50% K₃ [pN, 20° C.]:17.7 B(S)-2O-O5 5.00% V₀ [V, 20° C.]: 2.20 B(S)-2O-O6 3.00% γ₁ [mPa s,20° C.]: 110 CC-3-V1 8.50% LTS bulk [h, −20° C.]: >1000 h CC-4-V1 20.00%CC-V-V1 10.00% Y-4O-O4 11.00%

Example M280

CCP-3-1 3.50% Clearing point [° C.]: 89.5 CCP-V-1 8.50% Δn [589 nm, 20°C.]: 0.1061 CLY-3-O2 8.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CLY-4-O2 8.00%ε_(⊥) [1 kHz, 20° C.]: 7.9 CLY-5-O2 6.00% Δε [1 kHz, 20° C.]: −4.2CPY-3-O2 6.50% K₁ [pN, 20° C.]: 18.2 B(S)-2O-O4 4.00% K₃ [pN, 20° C.]:17.8 B(S)-2O-O5 5.00% V₀ [V, 20° C.]: 2.18 B(S)-2O-O6 3.00% γ₁ [mPa s,20° C.]: 114 CC-1V-V1 8.00% LTS bulk [h, −20° C.]: >1000 h CC-4-V120.00% CC-3-V 9.50% Y-4O-O4 10.00%

Example M281

B(S)-2O-O5 4.00% Clearing point [° C.]: 73 B(S)-2O-O4 4.00% Δn [589 nm,20° C.]: 0.1086 CC-3-V1 7.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-4-V1 22.00%ε_(⊥) [1 kHz, 20° C.]: 6.5 CCH-34 4.50% Δε [1 kHz, 20° C.]: −3.0 CCH-354.00% K₁ [pN, 20° C.]: 16.0 PP-1-2V1 5.00% K₃ [pN, 20° C.]: 16.4 CY-3-O27.50% V₀ [V, 20° C.]: 2.47 PY-1-O2 8.00% γ₁ [mPa s, 20° C.]: 89 PY-2-O28.00% PY-3-O2 2.00% CCP-31 14.00% CCY-3-O2 10.00%

Example M282

CLP-1V-1 3.50% Clearing point [° C.]: 91.5 CCP-V-1 8.50% Δn [589 nm, 20°C.]: 0.1084 CLY-3-O2 8.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CLY-4-O2 8.00%ε_(⊥) [1 kHz, 20° C.]: 7.7 CLY-5-O2 6.00% Δε [1 kHz, 20° C.]: −4.0CPY-3-O2 6.00% K₁ [pN, 20° C.]: 18.2 B(S)-2O-O4 3.50% K₃ [pN, 20° C.]:18.9 B(S)-2O-O5 4.50% V₀ [V, 20° C.]: 2.30 B(S)-2O-O6 3.00% γ₁ [mPa s,20° C.]: 115 CC-1V-V1 8.00% LTS bulk [h, −20° C.]: >1000 h CC-4-V120.00% CC-V-V1 11.00% Y-4O-O4 10.00

Example M283

CC-3-V1 7.00% Clearing point [° C.]: 74 CC-4-V1 22.00% Δn [589 nm, 20°C.]: 0.1351 CCP-3-1 14.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCY-3-O2 5.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CY-3-O2 6.00% Δε [1 kHz, 20° C.]: −3.1PP-1-2V1 10.00% K₁ [pN, 20° C.]: 16.4 PY-1-O2 9.00% K₃ [pN, 20° C.]:16.9 PY-3-O2 8.00% V₀ [V, 20° C.]: 2.47 PGIY-2-O4 14.00% γ₁ [mPa s, 20°C.]: 107 B(S)-2O-O4 2.00% LTS bulk [h, −20° C.]: >1000 h B(S)-2O-O53.00%

Example M284

CCH-34 6.00% Clearing point [° C.]: 74.5 CCH-35 4.50% Δn [589 nm, 20°C.]: 0.1126 CC-4-V1 17.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCY-3-O1 3.00%ε_(⊥) [1 kHz, 20° C.]: 6.9 CCY-3-O2 8.00% Δε [1 kHz, 20° C.]: −3.3CPY-2-O2 10.00% K₁ [pN, 20° C.]: 14.8 CPY-3-O2 11.00% K₃ [pN, 20° C.]:15.8 CY-3-O2 15.50% V₀ [V, 20° C.]: 2.30 CY-3-O4 4.50% γ₁ [mPa s, 20°C.]: 119 PCH-301 8.00% LTS bulk [h, −20° C.]: >1000 h PGIY-2-O4 4.00%LTS bulk [h, −25° C.]: >1000 h PP-1-2V1 8.50%

Example M285

BCH-32 2.50% Clearing point [° C.]: 73.5 CCP-V2-1 4.00% Δn [589 nm, 20°C.]: 0.1035 CCY-3-O2 11.50% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-3-O2 1.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CPY-3-O2 5.00% Δε [1 kHz, 20° C.]: −3.3CC-3-V1 11.00% K₁ [pN, 20° C.]: 15.4 CCH-24 8.00% K₃ [pN, 20° C.]: 15.2CCH-35 4.00% V₀ [V, 20° C.]: 2.28 CY-3-O2 6.50% γ₁ [mPa s, 20° C.]: 90PY-3-O2 6.00% PY-1-O2 7.50% PY-2-O2 4.00% CC-4-V1 22.00% B(S)-2O-O43.00% B(S)-2O-O5 4.00%

Example M286

CCH-301 3.50% Clearing point [° C.]: 74 CCH-34 6.00% Δn [589 nm, 20°C.]: 0.1119 CCH-35 4.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-4-V1 17.00% ε_(⊥)[1 kHz, 20° C.]: 6.8 CCY-3-O1 6.00% Δε [1 kHz, 20° C.]: −3.3 CCY-3-O24.50% K₁ [pN, 20° C.]: 14.3 CPY-2-O2 10.00% K₃ [pN, 20° C.]: 15.3CPY-3-O2 12.00% V₀ [V, 20° C.]: 2.28 CY-3-O2 15.00% γ₁ [mPa s, 20° C.]:118 CY-3-O4 7.00% LTS bulk [h, −20° C.]: >1000 h PCH-301 2.00% PP-1-2V19.00% PYP-2-3 4.00%

Example M287

CCH-34 7.00% Clearing point [° C.]: 74.5 CCH-35 6.00% Δn [589 nm, 20°C.]: 0.1124 CC-4-V1 17.50% ε_(∥) [1 kHz, 20° C.]: 3.5 CCY-3-O1 7.00%ε_(⊥) [1 kHz, 20° C.]: 6.9 CCY-3-O2 2.50% Δε [1 kHz, 20° C.]: −3.3CPY-2-O2 10.00% K₁ [pN, 20° C.]: 14.7 CPY-3-O2 11.50% K₃ [pN, 20° C.]:15.4 CY-3-O2 15.50% V₀ [V, 20° C.]: 2.27 CY-3-O4 7.00% γ₁ [mPa s, 20°C.]: 118 PCH-301 2.00% LTS bulk [h, −20° C.]: >1000 h PGIY-2-O4 4.00%PP-1-2V1 10.00%

Example M288

CLY-3-O2 9.00% Clearing point [° C.]: 74.5 CLY-3-O3 12.00% Δn [589 nm,20° C.]: 0.0939 B(S)-2O-O4 4.00% ε_(∥) [1 kHz, 20° C.]: 3.5 B(S)-2O-O55.00% ε_(⊥) [1 kHz, 20° C.]: 6.8 CC-3-V 19.00% Δε [1 kHz, 20° C.]: −3.4CC-3-V1 15.00% K₁ [pN, 20° C.]: 15.3 CY-3-O2 12.00% K₃ [pN, 20° C.]:15.7 PY-3-O2 7.00% V₀ [V, 20° C.]: 2.27 CC-4-V1 17.00% γ₁ [mPa s, 20°C.]: 82

Example M289

B(S)-2O-O4 3.00% Clearing point [° C.]: 75 B(S)-2O-O5 3.00% Δn [589 nm,20° C.]: 0.1088 CC-3-V1 7.50% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-4-V1 19.50%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCH-301 8.00% Δε [1 kHz, 20° C.]: −3.2 CCH-343.00% K₁ [pN, 20° C.]: 15.0 CY-3-O2 13.00% K₃ [pN, 20° C.]: 15.9 CY-3-O43.00% V₀ [V, 20° C.]: 2.34 PCH-53 3.00% γ₁ [mPa s, 20° C.]: 106 PP-1-2V16.00% LTS bulk [h, −20° C.]: >1000 h BCH-32 2.00% LTS bulk [h, −25°C.]: >1000 h CCY-3-O2 10.50% CPY-2-O2 5.50% CPY-3-O2 10.00% PYP-2-33.00%

Example M290

B(S)-2O-O4 4.00% Clearing point [° C.]: 75 B(S)-2O-O5 4.00% Δn [589 nm,20° C.]: 0.1086 CC-3-V1 9.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-4-V1 22.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCH-301 10.00% Δε [1 kHz, 20° C.]: −3.2CCH-34 2.00% K₁ [pN, 20° C.]: 15.5 CY-3-O2 15.00% K₃ [pN, 20° C.]: 16.8PP-1-2V1 8.00% V₀ [V, 20° C.]: 2.42 CCP-3-1 1.00% γ₁ [mPa s, 20° C.]: 98CCY-3-O2 10.00% LTS bulk [h, −20° C.]: >1000 h CPY-3-O2 12.00% PYP-2-33.00%

Example M291

B(S)-2O-O4 4.00% Clearing point [° C.]: 74.5 B(S)-2O-O5 4.00% Δn [589nm, 20° C.]: 0.1086 B(S)-2O-O6 3.00% ε_(∥) [1 kHz, 20° C.]: 3.4 CC-3-V19.00% ε_(⊥) [1 kHz, 20° C.]: 6.6 CC-4-V1 22.00% Δε [1 kHz, 20° C.]: −3.2CCH-301 6.00% K₁ [pN, 20° C.]: 16.0 CCH-34 7.00% K₃ [pN, 20° C.]: 16.5CY-3-O2 15.00% V₀ [V, 20° C.]: 2.40 PP-1-2V1 8.00% γ₁ [mPa s, 20° C.]:93 CCP-3-1 2.50% CCY-3-O2 6.00% CPY-3-O2 12.00% PYP-2-3 1.50%

Example M292

CCP-3-1 6.50% Clearing point [° C.]: 101 CCP-V-1 16.00% Δn [589 nm, 20°C.]: 0.1026 CCY-3-O2 6.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CLY-3-O2 6.00%ε_(⊥) [1 kHz, 20° C.]: 7.6 CLY-4-O2 7.00% Δε [1 kHz, 20° C.]: −4.0CLY-5-O2 6.00% K₁ [pN, 20° C.]: 20.4 B(S)-2O-O4 3.70% K₃ [pN, 20° C.]:19.3 B(S)-2O-O5 4.00% V₀ [V, 20° C.]: 2.32 B(S)-2O-O6 3.00% γ₁ [mPa s,20° C.]: 146 CC-3-V1 2.00% CC-4-V1 14.00% CCH-23 3.00% CCH-35 8.00%CY-3-O2 9.00% Y-4O-O4 5.00% CCQU-3-F 0.30%

Example M293

CCP-3-1 4.00% Clearing point [° C.]: 92.5 CCP-V-1 13.50% Δn [589 nm, 20°C.]: 0.1049 CLY-2-O4 4.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CLY-3-O2 6.00%ε_(⊥) [1 kHz, 20° C.]: 7.7 CLY-3-O3 4.00% Δε [1 kHz, 20° C.]: −4.1CLY-4-O2 5.00% K₁ [pN, 20° C.]: 19.1 CLY-5-O2 4.50% K₃ [pN, 20° C.]:17.0 CPY-3-O2 5.00% V₀ [V, 20° C.]: 2.16 B(S)-2O-O4 4.00% γ₁ [mPa s, 20°C.]: 123 B(S)-2O-O5 5.00% B(S)-2O-O6 3.00% CC-3-V1 8.00% CC-4-V1 15.00%CCH-23 9.70% Y-4O-O4 9.00% CCQU-3-F 0.30%

Example M294

CC-3-V1 9.00% Clearing point [° C.]: 76.5 CC-4-V1 2.00% Δn [589 nm, 20°C.]: 0.1047 CCH-34 7.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CP-V2-1 19.00% ε_(⊥)[1 kHz, 20° C.]: 6.5 CY-3-O2 6.00% Δε [1 kHz, 20° C.]: −3.1 PY-3-O211.50% K₁ [pN, 20° C.]: 14.0 CCP-V2-1 9.00% K₃ [pN, 20° C.]: 17.0CCY-3-O1 11.00% V₀ [V, 20° C.]: 2.48 CCY-3-O2 11.00% γ₁ [mPa s, 20° C.]:107 CCY-3-O3 2.50% LTS bulk [h, −20° C.]: >1000 h CPY-3-O2 12.00%

Example M295

CC-3-V1 9.00% Clearing point [° C.]: 73.5 CC-4-V1 10.50% Δn [589 nm, 20°C.]: 0.1091 CCH-301 8.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CY-3-O2 15.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 PY-2-O2 11.00% Δε [1 kHz, 20° C.]: −3.1PY-3-O2 8.00% K₁ [pN, 20° C.]: 13.9 CCP-3-1 9.50% K₃ [pN, 20° C.]: 16.4CCP-V2-1 12.00% V₀ [V, 20° C.]: 2.43 CCY-3-O2 3.50% γ₁ [mPa s, 20° C.]:104 CPY-3-O2 12.00% PYP-2-3 1.50%

Example M296

BCH-32 4.00% Clearing point [° C.]: 74.5 CCP-V2-1 4.00% Δn [589 nm, 20°C.]: 0.1032 CCY-3-O2 11.50% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-3-O2 1.00%ε_(⊥) [1 kHz, 20° C.]: 6.5 CPY-3-O2 8.00% Δε [1 kHz, 20° C.]: −3.0CC-3-V1 11.00% K₁ [pN, 20° C.]: 15.2 CCH-24 8.00% K₃ [pN, 20° C.]: 15.2CCH-35 5.00% V₀ [V, 20° C.]: 2.37 CY-3-O2 6.00% γ₁ [mPa s, 20° C.]: 90PY-3-O2 5.00% PY-1-O2 4.50% PY-2-O2 8.00% CC-4-V1 20.00% B-2O-O5 4.00%

Example M297

B-2O-O5 4.00% Clearing point [° C.]: 75 BCH-32 7.00% Δn [589 nm, 20°C.]: 0.1019 CC-3-V1 9.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-301 6.00% ε_(⊥)[1 kHz, 20° C.]: 6.5 CCH-34 6.00% Δε [1 kHz, 20° C.]: −2.9 CCP-V2-13.00% K₁ [pN, 20° C.]: 14.9 CCY-3-O2 11.00% K₃ [pN, 20° C.]: 14.8CLY-3-O2 6.00% V₀ [V, 20° C.]: 2.37 CPY-3-O2 4.00% γ₁ [mPa s, 20° C.]:91 CY-3-O2 4.00% LTS bulk [h, −20° C.]: >1000 h PY-1-O2 9.00% PY-2-O28.00% CC-4-V1 17.00% CCH-24 6.00%

Example M298

B(S)-2O-O4 2.00% Clearing point [° C.]: 75 B(S)-2O-O5 2.00% Δn [589 nm,20° C.]: 0.1024 CC-3-V1 8.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-4-V1 18.50%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCH-301 12.50% Δε [1 kHz, 20° C.]: −3.2CY-3-O2 15.00% K₁ [pN, 20° C.]: 14.3 PCH-302 8.00% K₃ [pN, 20° C.]: 16.2PP-1-2V1 2.50% V₀ [V, 20° C.]: 2.39 BCH-32 2.50% γ₁ [mPa s, 20° C.]: 105CCY-3-O2 7.50% LTS bulk [h, −25° C.]: >1000 h CLY-3-O2 1.00% CPY-2-O28.50% CPY-3-O2 12.00%

Example M299

B(S)-2O-O4 2.00% Clearing point [° C.]: 75 B(S)-2O-O5 2.00% Δn [589 nm,20° C.]: 0.1018 CC-3-V1 8.00% ε_(∥) [1 kHz, 20° C.]: 3.4 CC-4-V1 22.00%ε_(⊥) [1 kHz, 20° C.]: 6.4 CCH-301 9.00% Δε [1 kHz, 20° C.]: −3.0CY-3-O2 15.00% K₁ [pN, 20° C.]: 13.9 PCH-302 10.50% K₃ [pN, 20° C.]:15.7 PP-1-2V1 1.50% V₀ [V, 20° C.]: 2.40 CCP-31 1.00% γ₁ [mPa s, 20°C.]: 104 CCY-3-O2 5.00% CLY-3-O2 1.00% CPY-2-O2 11.00% CPY-3-O2 12.00%

Example M300

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM299 is mixed with 0.3% of the polymerisable compound of the formula

Example M301

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM299 is mixed with 0.25% of the polymerisable compound of the formula

Example M302

CC-3-V1 8.00% Clearing point [° C.]: 72.5 B(S)-2O-O4 0.75% Δn [589 nm,20° C.]: 0.1026 CC-4-V1 18.00% ε_(∥) [1 kHz, 20° C.]: 3.4 CCH-24 8.00%ε_(⊥) [1 kHz, 20° C.]: 6.5 CCH-301 4.00% Δε [1 kHz, 20° C.]: −3.1CCY-3-O2 11.50% K₁ [pN, 20° C.]: 14.3 CPY-3-O2 8.75% K₃ [pN, 20° C.]:15.1 CPY-2-O4 6.00% V₀ [V, 20° C.]: 2.34 CPY-2-O2 7.00% γ₁ [mPa s, 20°C.]: 104 CY-3-O2 15.00% LTS bulk [h, −20° C.]: >1000 h CY-3-O4 4.50%PP-1-2V1 8.50%

Example M303

B(S)-2O-O5 0.25% Clearing point [° C.]: 74 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.1039 CC-4-V1 26.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-24 2.00% ε_(⊥)[1 kHz, 20° C.]: 6.5 CCH-301 4.00% Δε [1 kHz, 20° C.]: −3.0 CCY-3-O17.50% K₁ [pN, 20° C.]: 14.0 CPY-3-O2 12.50% K₃ [pN, 20° C.]: 15.1CPY-2-O2 9.50% V₀ [V, 20° C.]: 2.36 CY-3-O2 15.00% γ₁ [mPa s, 20° C.]:103 CY-3-O4 7.00% PYP-2-3 3.00% PP-1-2V1 5.25%

Example M304

B(S)-2O-O5 0.25% Clearing point [° C.]: 73.5 CCP-3-1 13.00% Δn [589 nm,20° C.]: 0.1023 CC-3-V1 8.00% ε_(∥) [1 kHz, 20° C.]: 3.8 CC-4-V1 9.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCY-3-O1 6.00% Δε [1 kHz, 20° C.]: −2.9CCY-3-O2 7.00% K₁ [pN, 20° C.]: 13.6 CPY-3-O2 12.00% K₃ [pN, 20° C.]:15.5 CPY-2-O2 2.00% V₀ [V, 20° C.]: 2.42 PCH-302 6.50% γ₁ [mPa s, 20°C.]: 100 PY-1-O2 6.00% LTS bulk [h, −20° C.]: >1000 h CCH-301 15.00% LTSbulk [h, −25° C.]: >1000 h PYP-2-3 6.25% Y-4O-O4 9.00%

Example M305

B(S)-2O-O5 0.25% Clearing point [° C.]: 72.5 CCP-3-1 16.00% Δn [589 nm,20° C.]: 0.1036 CC-3-V 5.00% ε_(∥) [1 kHz, 20° C.]: 3.8 CC-3-V1 7.00%ε_(⊥) [1 kHz, 20° C.]: 6.9 CC-4-V1 9.00% Δε [1 kHz, 20° C.]: −3.1CCY-3-O1 4.00% K₁ [pN, 20° C.]: 13.5 CCY-3-O2 6.00% K₃ [pN, 20° C.]:15.1 CLY-3-O2 4.50% V₀ [V, 20° C.]: 2.33 CPY-3-O2 5.00% γ₁ [mPa s, 20°C.]: 96 CPY-2-O2 2.00% LTS bulk [h, −20° C.]: >1000 h CY-3-O2 7.50%PY-1-O2 4.75% PYP-2-3 10.00% CCH-301 10.00% Y-4O-O4 9.00%

Example M306

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM305 is mixed with 0.25% of the polymerisable compound of the formula

Example M307

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM305 is mixed with 0.25% of the polymerisable compound of the formula

Example M308

Y-3-O1 6.00% Clearing point [° C.]: 75 B(S)-2O-O5 4.00% Δn [589 nm, 20°C.]: 0.0890 CC-3-V1 8.00% ε_(∥) [1 kHz, 20° C.]: 3.8 CC-4-V1 22.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CCH-35 6.00% Δε [1 kHz, 20° C.]: −3.1 CCP-3-114.00% K₁ [pN, 20° C.]: 14.6 CCY-3-O2 11.00% K₃ [pN, 20° C.]: 15.8CCY-5-O2 9.00% V₀ [V, 20° C.]: 2.40 CY-3-O2 12.00% γ₁ [mPa s, 20° C.]:92 PY-1-O2 8.00%

Example M309

B(S)-2O-O5 4.00% Clearing point [° C.]: 75 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.0893 CC-4-V1 22.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-301 1.50%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCH-34 6.00% Δε [1 kHz, 20° C.]: −3.1 CCH-356.00% K₁ [pN, 20° C.]: 15.1 PCH-301 4.00% K₃ [pN, 20° C.]: 16.4 CCP-3-12.50% V₀ [V, 20° C.]: 2.39 CCY-3-O2 11.00% γ₁ [mPa s, 20° C.]: 91CCY-5-O2 10.00% CY-3-O2 15.00% PY-1-O2 10.00%

Example M310

Y-3-O1 7.00% Clearing point [° C.]: 74 B-2O-O5 3.50% Δn [589 nm, 20°C.]: 0.1055 CC-3-V1 8.00% ε_(∥) [1 kHz, 20° C.]: 4.0 CC-4-V1 22.00%ε_(⊥) [1 kHz, 20° C.]: 7.0 CCP-3-1 16.00% Δε [1 kHz, 20° C.]: −3.0CCP-V2-1 5.00% K₁ [pN, 20° C.]: 13.8 CCY-3-O2 8.50% K₃ [pN, 20° C.]:15.2 CLY-3-O2 1.00% V₀ [V, 20° C.]: 2.38 CPY-3-O2 12.00% γ₁ [mPa s, 20°C.]: 91 PY-1-O2 7.00% PY-2-O2 10.00%

Example M311

CCP-3-1 5.00% Clearing point [° C.]: 92 CCP-V-1 6.50% Δn [589 nm, 20°C.]: 0.1028 CCP-V2-1 2.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CCY-3-O2 6.00%ε_(⊥) [1 kHz, 20° C.]: 7.7 CLY-2-O4 5.00% Δε [1 kHz, 20° C.]: −4.1CLY-3-O2 5.00% K₁ [pN, 20° C.]: 19.1 CLY-4-O2 5.00% K₃ [pN, 20° C.]:17.2 CLY-5-O2 4.50% V₀ [V, 20° C.]: 2.18 PGIY-2-O4 3.00% γ₁ [mPa s, 20°C.]: 124 B(S)-2O-O4 4.00% B(S)-2O-O5 4.00% B(S)-2O-O6 4.00% CC-4-V115.20% CC-3-V1 8.00% CCH-23 12.00% CY-3-O2 4.00% Y-4O-O4 6.00% CCQU-3-F0.30%

Example M312

Y-3-O1 7.50% Clearing point [° C.]: 74.5 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.1078 CC-4-V1 21.50% ε_(∥) [1 kHz, 20° C.]: 4.0 PP-1-2V1 2.00%ε_(⊥) [1 kHz, 20° C.]: 7.1 CCP-3-1 14.00% Δε [1 kHz, 20° C.]: −3.1CCY-3-O1 2.50% K₁ [pN, 20° C.]: 13.9 CCY-3-O2 11.00% K₃ [pN, 20° C.]:15.6 CLY-3-O2 1.00% V₀ [V, 20° C.]: 2.36 CPY-2-O2 4.00% γ₁ [mPa s, 20°C.]: 98 CPY-3-O2 12.00% LTS bulk [h, −20° C.]: >1000 h PY-1-O2 10.00%PY-2-O2 6.50%

Example M313

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM312 is mixed with 0.3% of the polymerisable compound of the formula

Example M314

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM312 is mixed with 0.25% of the polymerisable compound of the formula

Example M315

CCP-3-1 5.00% Clearing point [° C.]: 91 CCP-V-1 4.00% Δn [589 nm, 20°C.]: 0.1028 CCP-V2-1 4.00% ε_(∥) [1 kHz, 20° C.]: 3.8 CCY-3-O2 5.00%ε_(⊥) [1 kHz, 20° C.]: 7.7 CLY-2-O4 4.00% Δε [1 kHz, 20° C.]: −3.9CLY-3-O2 5.00% K₁ [pN, 20° C.]: 19.4 CLY-4-O2 5.00% K₃ [pN, 20° C.]:16.9 CLY-5-O2 4.50% V₀ [V, 20° C.]: 2.18 PGIY-2-O4 2.00% γ₁ [mPa s, 20°C.]: 114 B(S)-2O-O4 3.50% B(S)-2O-O5 4.00% B(S)-2O-O6 4.00% CC-2V-V215.20% CC-3-V1 8.00% CC-4-V1 14.00% CY-3-O2 4.50% Y-4O-O4 8.00% CCQU-3-F0.30%

Example M316

CC-3-V1  5.00% Clearing point [° C.]: 72 CC-4-V1 15.50% Δn [589 nm, 20°C.]: 0.996 CCY-3-O1 11.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCY-3-O2  9.00%ε_(⊥) [1 kHz, 20° C.]: 6.4 CLY-3-O2 1.00% Δε [1 kHz, 20° C.]: −3.0CPY-2-O2 12.00% K₁ [pN, 20° C.]: 13.5 CPY-3-O2  7.00% K₃ [pN, 20° C.]:15.2 CY-3-O2  1.50% V₀ [V, 20° C.]: 2.39 PY-1-O2  3.00% γ₁ [mPa s, 20°C.]: 89 PY-2-O2 10.00%

25.00%

Example M317

Y-3-O1 6.50% Clearing point [° C.]: 74.5 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.0895 CC-4-V1 22.00% ε_(∥) [1 kHz, 20° C.]: 3.8 CCH-35 5.50% ε_(⊥)[1 kHz, 20° C.]: 7.0 CCP-3-1 9.00% Δε [1 kHz, 20° C.]: −3.2 CCY-3-O211.00% K₁ [pN, 20° C.]: 14.1 CCY-5-O2 11.00% K₃ [pN, 20° C.]: 15.8CPY-3-O2 6.00% V₀ [V, 20° C.]: 2.37 CY-3-O2 13.00% γ₁ [mPa s, 20° C.]:97 PY-1-O2 8.00% LTS bulk [h, −20° C.]: >1000 h

Example M318

BCH-32 5.00% Clearing point [° C.]: 74.5 CCP-V2-1 7.00% Δn [589 nm, 20°C.]: 0.1068 CCY-3-O2 9.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CLY-3-O2 1.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CPY-3-O2 2.50% Δε [1 kHz, 20° C.]: −3.2CC-3-V1 11.00% K₁ [pN, 20° C.]: 15.8 CCH-34 6.00% K₃ [pN, 20° C.]: 15.6CCH-35 5.00% V₀ [V, 20° C.]: 2.34 CY-3-O2 8.00% γ₁ [mPa s, 20° C.]: 89PY-3-O2 3.00% LTS bulk [h, −20° C.]: >1000 h PY-1-O2 9.00% PY-2-O2 7.00%CC-4-V1 19.50% B(S)-2O-O4 3.00% B(S)-2O-O5 4.00%

Example M319

Y-4O-O4 6.50% Clearing point [° C.]: 74 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.0906 CC-4-V1 22.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCH-301 7.00%ε_(⊥) [1 kHz, 20° C.]: 6.9 CCP-3-1 13.00% Δε [1 kHz, 20° C.]: −3.2CCY-3-O1 6.50% K₁ [pN, 20° C.]: 14.2 CCY-3-O2 11.00% K₃ [pN, 20° C.]:16.3 CPY-3-O2 6.50% V₀ [V, 20° C.]: 2.39 CY-3-O2 11.50% γ₁ [mPa s, 20°C.]: 97 PY-1-O2 8.00% LTS bulk [h, −20° C.]: >1000 h

Example M320

Y-1-O2 7.00% Clearing point [° C.]: 72.5 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.0911 CC-4-V1 20.00% ε_(∥) [1 kHz, 20° C.]: 4.0 CCH-34 4.00% ε_(⊥)[1 kHz, 20° C.]: 7.2 CCH-35 4.00% Δε [1 kHz, 20° C.]: −3.2 CY-3-O2 6.50%K₁ [pN, 20° C.]: 14.4 PY-1-O2 8.00% K₃ [pN, 20° C.]: 15.6 PY-3-O2 6.00%V₀ [V, 20° C.]: 2.33 CCP-3-1 8.00% γ₁ [mPa s, 20° C.]: 91 CCY-3-O1 4.50%CCY-3-O2 11.00% CCY-5-O2 11.00% CPY-3-O2 2.00%

Example M321

Y-3-O1 6.00% Clearing point [° C.]: 74.5 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.1018 CC-4-V1 22.00% ε_(∥) [1 kHz, 20° C.]: 3.9 CCH-34 4.00% ε_(⊥)[1 kHz, 20° C.]: 7.0 CCH-35 4.00% Δε [1 kHz, 20° C.]: −3.1 CY-3-O2 1.50%K₁ [pN, 20° C.]: 13.9 PY-1-O2 8.00% K₃ [pN, 20° C.]: 14.7 PY-2-O2 8.00%V₀ [V, 20° C.]: 2.30 CCP-3-1 7.00% Y₁ [mPa s, 20° C.]: 94 CCY-3-O211.00% CCY-3-O3 2.50% CLY-3-O2 1.00% CPY-2-O2 5.00% CPY-3-O2 12.00%

Example M322

Y-3-O5 6.00% Clearing point [° C.]: 75.5 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.1022 CC-4-V1 22.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCH-34 4.00% ε_(⊥)[1 kHz, 20° C.]: 6.8 CCH-35 4.00% Δε [1 kHz, 20° C.]: −3.1 CY-3-O2 1.50%K₁ [pN, 20° C.]: 14.5 PY-1-O2 8.00% K₃ [pN, 20° C.]: 15.3 PY-2-O2 8.00%V₀ [V, 20° C.]: 2.33 CCP-3-1 7.00% γ₁ [mPa s, 20° C.]: 101 CCY-3-O211.00% CCY-3-O3 2.50% CLY-3-O2 1.00% CPY-2-O2 5.00% CPY-3-O2 12.00%

Example M323

Y-4-O4 6.00% Clearing point [° C.]: 75.5 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.1025 CC-4-V1 22.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-34 4.00% ε_(⊥)[1 kHz, 20° C.]: 6.8 CCH-35 4.00% Δε [1 kHz, 20° C.]: −3.1 CY-3-O2 1.50%K₁ [pN, 20° C.]: 14.5 PY-1-O2 8.00% K₃ [pN, 20° C.]: 15.3 PY-2-O2 8.00%V₀ [V, 20° C.]: 2.33 CCP-3-1 7.00% γ₁ [mPa s, 20° C.]: 101 CCY-3-O211.00% CCY-3-O3 2.50% CLY-3-O2 1.00% CPY-2-O2 5.00% CPY-3-O2 12.00%

Example M324

Y-5-O3 6.00% Clearing point [° C.]: 76 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.1026 CC-4-V1 22.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-34 4.00% ε_(⊥)[1 kHz, 20° C.]: 6.8 CCH-35 4.00% Δε [1 kHz, 20° C.]: −3.1 CY-3-O2 1.50%K₁ [pN, 20° C.]: 14.7 PY-1-O2 8.00% K₃ [pN, 20° C.]: 15.5 PY-2-O2 8.00%V₀ [V, 20° C.]: 2.35 CCP-3-1 7.00% γ₁ [mPa s, 20° C.]: 102 CCY-3-O211.00% CCY-3-O3 2.50% CLY-3-O2 1.00% CPY-2-O2 5.00% CPY-3-O2 12.00%

Example M325

Y-3-O5 5.00% Clearing point [° C.]: 75 CC-3-V1 8.50% Δn [589 nm, 20°C.]: 0.0900 CC-4-V1 22.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-301 2.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CCH-34 5.00% Δε [1 kHz, 20° C.]: −3.2 CCH-355.00% K₁ [pN, 20° C.]: 14.3 CY-3-O2 13.00% K₃ [pN, 20° C.]: 15.4 PY-1-O25.00% V₀ [V, 20° C.]: 2.33 CCP-3-1 2.00% γ₁ [mPa s, 20° C.]: 100CCY-3-O1 8.00% CCY-3-O2 10.00% CPY-2-O2 2.50% CPY-3-O2 12.00%

Example M326

Y-3-O5 4.00% Clearing point [° C.]: 74 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.1000 CC-4-V1 21.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-24 10.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CCY-3-O1 2.00% Δε [1 kHz, 20° C.]: −3.1CCY-3-O2 10.00% K₁ [pN, 20° C.]: 13.9 CPY-2-O2 12.00% K₃ [pN, 20° C.]:14.3 CPY-3-O2 12.00% V₀ [V, 20° C.]: 2.27 CY-3-O2 14.50% γ₁ [mPa s, 20°C.]: 102 PP-1-2V1 4.00% PYP-2-3 2.50%

Example M327

CC-4-V1 22.00% Clearing point [° C.]: 74.5 CC-3-V1 9.00% Δn [589 nm, 20°C.]: 0.1088 CCH-34 8.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CY-3-O2 15.00% ε_(⊥)[1 kHz, 20° C.]: 6.5 CY-5-O2 13.00% Δε [1 kHz, 20° C.]: −3.0 CCY-3-O24.00% K₁ [pN, 20° C.]: 14.1 CPY-2-O2 5.00% K₃ [pN, 20° C.]: 14.8CPY-3-O2 11.00% V₀ [V, 20° C.]: 2.35 PYP-2-3 12.50% γ₁ [mPa s, 20° C.]:109 PPGU-3-F 0.50% LTS bulk [h, −20° C.]: >1000 h

Example M328

CC-3-V1 9.00% Clearing point [° C.]: 74.5 CC-4-V1 22.00% Δn [589 nm, 20°C.]: 0.1087 CCH-34 6.50% ε_(∥) [1 kHz, 20° C.]: 3.4 CY-3-O2 15.00% ε_(⊥)[1 kHz, 20° C.]: 6.4 CY-5-O2 9.00% Δε [1 kHz, 20° C.]: −3.0 PP-1-2V18.00% K₁ [pN, 20° C.]: 15.0 CCY-3-O2 4.50% K₃ [pN, 20° C.]: 16.0CPY-2-O2 12.00% V₀ [V, 20° C.]: 2.44 CPY-3-O2 12.00% γ₁ [mPa s, 20° C.]:106 PYP-2-3 2.00%

Example M329

BCH-32  8.00% Clearing point [° C.]: 74 CC-3-V1  9.00% Δn [589 nm, 20°C.]: 0.1082 CC-4-V1 20.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1  7.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCP-V2-1  5.00% Δε [1 kHz, 20° C.]: −3.1CCY-3-O2  9.00% K₁ [pN, 20° C.]: 14.1 CLY-3-O2  1.00% K₃ [pN, 20° C.]:15.8 CPY-3-O2  2.50% V₀ [V, 20° C.]: 2.38 CY-3-O2 14.00% γ₁ [mPa s, 20°C.]: 100 PCH-301  3.50% LTS bulk [h, −20° C.]: >1000 h PY-1-O2  8.50%LTS bulk [h, −25° C.]: >1000 h PY-2-O2  8.50%

 4.00%

Example M330

B(S)-2O-O4 3.00% Clearing point [° C.]: 74.5 B(S)-2O-O5 4.00% Δn [589nm, 20° C.]: 0.1040 BCH-32 4.50% ε_(∥) [1 kHz, 20° C.]: 3.4 CC-3-V110.50% ε_(⊥) [1 kHz, 20° C.]: 6.1 CC-4-V1 19.00% Δε [1 kHz, 20° C.]:−2.7 CCH-34 5.50% K₁ [pN, 20° C.]: 13.9 CCH-35 3.00% K₃ [pN, 20° C.]:15.3 CCY-3-O2 4.50% V₀ [V, 20° C.]: 2.51 CPY-3-O2 12.00% γ₁ [mPa s, 20°C.]: 91 CY-3-O2 13.50% LTS bulk [h, −20° C.]: >1000 h PCH-301 13.50%PYP-2-3 1.50% PGIY-2-O4 3.50% CCH-301 2.00%

Example M331

CC-3-V1 9.00% Clearing point [° C.]: 74 CC-4-V1 22.00% Δn [589 nm, 20°C.]: 0.1085 CCH-34 6.00% ε_(∥) [1 kHz, 20° C.]: 3.4 CCH-35 4.00% ε_(⊥)[1 kHz, 20° C.]: 6.4 CY-3-O2 15.00% Δε [1 kHz, 20° C.]: −3.0 CY-5-O28.50% K₁ [pN, 20° C.]: 14.9 PP-1-2V1 5.50% K₃ [pN, 20° C.]: 15.1CPY-2-O2 12.00% V₀ [V, 20° C.]: 2.37 CPY-3-O2 12.00% γ₁ [mPa s, 20° C.]:104 PGIY-2-O4 6.00%

Example M332

CC-3-V1 9.00% Clearing point [° C.]: 74 CC-4-V1 22.00% Δn [589 nm, 20°C.]: 0.1085 CCH-24 10.00% ε_(∥) [1 kHz, 20° C.]: 3.4 CY-3-O2 15.00%ε_(⊥) [1 kHz, 20° C.]: 6.4 CY-5-O2 5.50% Δε [1 kHz, 20° C.]: −3.0PP-1-2V1 5.00% K₁ [pN, 20° C.]: 14.1 CCY-3-O2 2.50% K₃ [pN, 20° C.]:14.3 CPY-2-O2 12.00% V₀ [V, 20° C.]: 2.32 CPY-3-O2 12.00% γ₁ [mPa s, 20°C.]: 103 PGIY-2-O4 6.00% PYP-2-3 1.00%

Example M333

CC-3-V1  9.00% Clearing point [° C.]: 74.5 CC-4-V1 22.00% Δn [589 nm,20° C.]: 0.1091 CCH-301  7.50% ε_(∥) [1 kHz, 20° C.]: 3.5 CY-3-O2 14.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CY-3-O4  4.00% Δε [1 kHz, 20° C.]: −3.2PP-1-2V1  8.00% K₁ [pN, 20° C.]: 15.6 CCP-3-1  5.00% K₃ [pN, 20° C.]:16.7 CCY-3-O2  7.50% V₀ [V, 20° C.]: 2.43 CPY-3-O2 12.00% γ₁ [mPa s, 20°C.]: 107 PYP-2-3  3.00% LTS bulk [h, −20 C.]: >1000 h

 8.00%

Example M334

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM333 is mixed with 0.3% of the polymerisable compound of the formula

Example M335

CC-3-V1 9.00% Clearing point [° C.]: 75 CC-4-V1 20.50% Δn [589 nm, 20°C.]: 0.1094 CP-2V-1 7.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CY-3-O2 13.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 PY-2-O2 10.00% Δε [1 kHz, 20° C.]: −3.1PY-3-O2 3.50% K₁ [pN, 20° C.]: 14.2 CCP-3-1 8.50% K₃ [pN, 20° C.]: 16.5CCY-3-O2 11.00% V₀ [V, 20° C.]: 2.43 CPY-2-O2 2.50% γ₁ [mPa s, 20° C.]:107 CPY-3-O2 12.00% LTS bulk [h, −25° C.]: >1000 h PYP-2-3 3.00%

Example M336

BCH-32 2.00% Clearing point [° C.]: 75 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.1032 CC-4-V1 27.00% ε_(∥) [1 kHz, 20° C.]: 3.4 CCH-24 8.00% ε_(⊥)[1 kHz, 20° C.]: 6.0 CCY-3-O2 6.50% Δε [1 kHz, 20° C.]: −2.7 CPY-3-O211.00% K₁ [pN, 20° C.]: 13.9 CY-3-O2 15.50% K₃ [pN, 20° C.]: 14.1CY-3-O4 4.50% V₀ [V, 20° C.]: 2.44 PYP-2-3 6.00% γ₁ [mPa s, 20° C.]: 96PGIY-2-O4 8.00% LTS bulk [h, −20° C.]: >1000 h CCH-301 3.50% LTS bulk[h, −25° C.]: >1000 h

Example M337

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM336 is mixed with 0.3% of the polymerisable compound of the formula

Example M338

CC-3-V1 9.00% Clearing point [° C.]: 74 CC-4-V1 22.00% Δn [589 nm, 20°C.]: 0.1096 CCH-301 4.00% ε_(∥) [1 kHz, 20° C.]: 3.5 PP-1-2V1 4.50%ε_(⊥) [1 kHz, 20° C.]: 6.7 CY-3-O2 15.00% Δε [1 kHz, 20° C.]: −3.2PY-2-O2 10.00% K₁ [pN, 20° C.]: 14.5 PY-3-O2 3.00% K₃ [pN, 20° C.]: 16.6BCH-32 3.50% V₀ [V, 20° C.]: 2.42 CCP-3-1 4.00% γ₁ [mPa s, 20° C.]: 104CCY-3-O2 11.00% LTS bulk [h, −25° C.]: >1000 h CPY-2-O2 2.00% CPY-3-O212.00%

Example M339

CC-3-V1 8.00% Clearing point [° C.]: 75.5 CC-4-V1 22.00% Δn [589 nm, 20°C.]: 0.1344 CCP-3-1 15.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCY-3-O2 4.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CY-3-O2 6.00% Δε [1 kHz, 20° C.]: −3.2PP-1-2V1 7.00% K₁ [pN, 20° C.]: 16.9 PY-1-O2 9.00% K₃ [pN, 20° C.]: 18.0PY-3-O2 10.00% V₀ [V, 20° C.]: 2.51 PGIY-3-O4 14.00% γ₁ [mPa s, 20° C.]:116 B(S)-2O-O4 2.00% LTS bulk [h, −25° C.]: >1000 h B(S)-2O-O5 3.00%

Example M340

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM339 is mixed with 0.25% of the polymerisable compound of the formula

Example M341

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM339 is mixed with 0.25% of the polymerisable compound of the formula

Example M342

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM339 is mixed with 0.3% of the polymerisable compound of the formula

Example M343

CC-3-V1 9.00% Clearing point [° C.]: 74.5 CC-4-V1 22.00% Δn [589 nm, 20°C.]: 0.1022 CCH-301 5.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1 13.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCY-3-O2 6.50% Δε [1 kHz, 20° C.]: −3.1CLY-3-O2 1.00% K₁ [pN, 20° C.]: 14.2 CPY-2-O2 6.00% K₃ [pN, 20° C.]:16.2 CPY-3-O2 7.00% V₀ [V, 20° C.]: 2.41 CY-3-O2 15.00% γ₁ [mPa s, 20°C.]: 98 PY-1-O2 5.50% LTS bulk [h, −20° C.]: >1000 h PY-2-O2 10.00%

Example M344

B(S)-2O-O5 1.50% Clearing point [° C.]: 74.5 CC-3-V1 9.00% Δn [589 nm,20° C.]: 0.1025 CC-4-V1 20.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-301 8.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCP-3-1 3.50% Δε [1 kHz, 20° C.]: −3.1CCP-V2-1 10.00% K₁ [pN, 20° C.]: 14.0 CCY-3-O2 4.50% K₃ [pN, 20° C.]:16.0 CLY-3-O2 1.00% V₀ [V, 20° C.]: 2.40 CPY-2-O2 2.00% γ₁ [mPa s, 20°C.]: 97 CPY-3-O2 12.00% LTS bulk [h, −20° C.]: >1000 h CY-3-O2 15.00%PY-1-O2 3.50% PY-2-O2 10.00%

Example M345

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM344 is mixed with 0.3% of the polymerisable compound of the formula

Example M346

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM344 is mixed with 0.3% of the polymerisable compound of the formula

Example M347

B(S)-2O-O5 1.00% Clearing point [° C.]: 73.5 CC-3-V1 9.00% Δn [589 nm,20° C.]: 0.1024 CC-4-V1 22.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCP-3-1 1.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CCP-V2-1 10.00% Δε [1 kHz, 20° C.]: −3.1CCY-3-O2 9.50% K₁ [pN, 20° C.]: 13.8 CLY-3-O2 1.00% K₃ [pN, 20° C.]:15.9 CPY-2-O2 11.00% V₀ [V, 20° C.]: 2.39 CY-3-O2 15.00% γ₁ [mPa s, 20°C.]: 99 PCH-302 8.00% LTS bulk [h, −20° C.]: >1000 h PY-1-O2 2.50%PY-2-O2 10.00%

Example M348

CC-3-V1 7.50% Clearing point [° C.]: 75 CC-4-V1 15.00% Δn [589 nm, 20°C.]: 0.1086 CC-2V-V2 15.00% ε_(∥) [1 kHz, 20° C.]: 3.4 CY-3-O2 15.00%ε_(⊥) [1 kHz, 20° C.]: 6.5 CY-5-O2 10.00% Δε [1 kHz, 20° C.]: −3.0PP-1-2V1 7.00% K₁ [pN, 20° C.]: 14.7 CCY-3-O2 7.50% K₃ [pN, 20° C.]:15.6 CPY-2-O2 10.00% V₀ [V, 20° C.]: 2.40 CPY-3-O2 10.00% γ₁ [mPa s, 20°C.]: 104 PYP-2-3 3.00%

Example M349

CC-3-V1 8.00% Clearing point [° C.]: 75 CC-4-V1 20.00% Δn [589 nm, 20°C.]: 0.0811 CCH-301 10.00% ε_(∥) [1 kHz, 20° C.]: 3.4 CCH-34 5.00% ε_(⊥)[1 kHz, 20° C.]: 6.4 CCP-3-1 1.50% Δε [1 kHz, 20° C.]: −3.0 CCY-3-O19.00% K₁ [pN, 20° C.]: 13.9 CCY-3-O2 11.00% K₃ [pN, 20° C.]: 15.8CCY-4-O2 3.00% V₀ [V, 20° C.]: 2.43 CPY-2-O2 1.50% γ₁ [mPa s, 20° C.]:96 CPY-3-O2 4.00% LTS bulk [h, −20° C.]: >1000 h CY-3-O2 15.00% CY-3-O46.00% PCH-302 5.00% PY-3-O2 1.00%

Example M350

B-2O-O5 4.00% Clearing point [° C.]: 74.5 CGS-3-2 8.00% Δn [589 nm, 20°C.]: 0.1086 CC-3-V1 9.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CC-4-V1 20.00%ε_(⊥) [1 kHz, 20° C.]: 6.9 CCP-3-1 9.50% Δε [1 kHz, 20° C.]: −3.2CCP-V2-1 5.00% K₁ [pN, 20° C.]: 14.6 CCY-3-O2 9.00% K₃ [pN, 20° C.]:16.6 CLY-3-O2 1.00% V₀ [V, 20° C.]: 2.40 CPY-3-O2 3.00% γ₁ [mPa s, 20°C.]: 104 CY-3-O2 15.00% LTS bulk [h, −20° C.]: >1000 h PCH-301 2.00% LTSbulk [h, −25° C.]: >1000 h PY-1-O2 8.00% PY-2-O2 6.50%

Example M351

B(S)-2O-O5 4.00% Clearing point [° C.]: 74 CC-3-V1 6.00% Δn [589 nm, 20°C.]: 0.0900 CC-4-V1 10.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-301 15.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CCP-3-1 13.00% Δε [1 kHz, 20° C.]: −3.2CCY-3-O2 11.00% K₁ [pN, 20° C.]: 14.1 CCY-5-O2 9.00% K₃ [pN, 20° C.]:16.5 CY-3-O2 15.00% V₀ [V, 20° C.]: 2.40 PCH-302 7.00% γ₁ [mPa s, 20°C.]: 104 PY-2-O2 8.00% LTS bulk [h, −20° C.]: >1000 h CCH-35 2.00%

Example M352

CC-3-V1 8.00% Clearing point [° C.]: 74 CC-4-V1 13.00% Δn [589 nm, 20°C.]: 0.0904 CCH-301 15.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCP-3-1 13.00%ε_(⊥) [1 kHz, 20° C.]: 6.8 CCY-3-O1 3.00% Δε [1 kHz, 20° C.]: −3.2CCY-3-O2 11.00% K₁ [pN, 20° C.]: 14.0 CCY-5-O2 8.00% K₃ [pN, 20° C.]:16.7 CY-3-O2 15.00% V₀ [V, 20° C.]: 2.41 PY-1-O2 8.00% γ₁ [mPa s, 20°C.]: 103 PY-2-O2 6.00% LTS bulk [h, −20° C.]: >1000 h

Example M353

B(S)-2O-O5 1.50% Clearing point [° C.]: 75 CC-3-V1 9.00% Δn [589 nm, 20°C.]: 0.1019 CC-4-V1 20.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-301 8.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCP-3-1 11.50% Δε [1 kHz, 20° C.]: −3.1CCP-3-3 2.00% K₁ [pN, 20° C.]: 14.3 CCY-3-O2 4.50% K₃ [pN, 20° C.]: 16.2CLY-3-O2 1.00% V₀ [V, 20° C.]: 2.41 CPY-2-O2 2.00% γ₁ [mPa s, 20° C.]:97 CPY-3-O2 12.00% LTS bulk [h, −20° C.]: >1000 h CY-3-O2 15.00% LTSbulk [h, −25° C.]: >1000 h PY-1-O2 3.50% PY-2-O2 10.00%

Example M354

B(S)-2O-O5 4.00% Clearing point [° C.]: 74 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.1019 CC-4-V1 16.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-301 9.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CCP-3-1 13.00% Δε [1 kHz, 20° C.]: −3.1CCY-3-O2 11.00% K₁ [pN, 20° C.]: 14.2 CLY-3-O2 1.00% K₃ [pN, 20° C.]:15.9 CPY-2-O2 8.00% V₀ [V, 20° C.]: 2.40 CY-3-O2 8.50% γ₁ [mPa s, 20°C.]: 99 PCH-302 8.00% LTS bulk [h, −20° C.]: >1000 h PY-1-O2 3.50% LTSbulk [h, −25° C.]: >1000 h PY-2-O2 10.00%

Example M355

B(S)-2O-O5 4.00% Clearing point [° C.]: 74 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.1028 CC-4-V1 17.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-301 15.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCP-3-1 13.00% Δε [1 kHz, 20° C.]: −3.1CCY-3-O2 4.00% K₁ [pN, 20° C.]: 14.2 CLY-3-O2 1.00% K₃ [pN, 20° C.]:15.6 CPY-2-O2 2.50% V₀ [V, 20° C.]: 2.37 CPY-3-O2 12.00% γ₁ [mPa s, 20°C.]: 96 CY-3-O2 9.00% LTS bulk [h, −20° C.]: >1000 h PY-1-O2 4.00% LTSbulk [h, −25° C.]: >1000 h PY-2-O2 10.00%

Example M356

B(S)-2O-O5 1.50% Clearing point [° C.]: 74.5 CC-3-V1 8.00% Δn [589 nm,20° C.]: 0.0901 CC-4-V1 20.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-301 7.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCH-24 3.50% Δε [1 kHz, 20° C.]: −3.2 CCP-3-15.50% K₁ [pN, 20° C.]: 14.2 CCY-3-O1 8.00% K₃ [pN, 20° C.]: 16.3CCY-3-O2 11.00% V₀ [V, 20° C.]: 2.38 CCY-5-O2 4.50% γ₁ [mPa s, 20° C.]:100 CPY-2-O2 1.50% LTS bulk [h, −20° C.]: >1000 h CY-3-O2 14.50% LTSbulk [h, −30° C.]: >1000 h PCH-302 5.00% PY-1-O2 10.00%

Example M357

B(S)-2O-O5 1.00% Clearing point [° C.]: 75 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.0909 CC-4-V1 19.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCH-301 7.50%ε_(⊥) [1 kHz, 20° C.]: 6.9 CCP-3-1 16.00% Δε [1 kHz, 20° C.]: −3.2CCY-3-O1 6.00% K₁ [pN, 20° C.]: 14.1 CCY-3-O2 5.00% K₃ [pN, 20° C.]:15.9 CCY-5-O2 4.00% V₀ [V, 20° C.]: 2.36 CPY-2-O2 7.00% γ₁ [mPa s, 20°C.]: 98 CY-3-O2 15.50% LTS bulk [h, −20° C.]: >1000 h Y-4O-O4 5.00%PY-1-O2 6.00%

Example M358

B(S)-2O-O5 5.00% Clearing point [° C.]: 74.5 BCH-32 1.50% Δn [589 nm,20° C.]: 0.1044 CC-3-V1 8.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-4-V1 19.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CCY-3-O2 11.00% Δε [1 kHz, 20° C.]: −3.1CPY-3-O2 11.00% K₁ [pN, 20° C.]: 13.8 CY-3-O2 15.50% K₃ [pN, 20° C.]:15.6 PCH-302 6.50% V₀ [V, 20° C.]: 2.37 PYP-2-3 8.50% γ₁ [mPa s, 20°C.]: 103 CCH-301 14.00% LTS bulk [h, −20° C.]: >1000 h

Example M359

B(S)-2O-O4 3.00% Clearing point [° C.]: 73.5 CC-3-V1 8.00% Δn [589 nm,20° C.]: 0.1031 CC-4-V1 20.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-301 14.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CCY-3-O2 11.00% Δε [1 kHz, 20° C.]: −3.1CCP-3-1 2.00% K₁ [pN, 20° C.]: 14.0 CPY-3-O2 11.50% K₃ [pN, 20° C.]:15.7 CY-3-O2 15.00% V₀ [V, 20° C.]: 2.38 CY-3-O4 4.50% γ₁ [mPa s, 20°C.]: 102 PP-1-2V1 3.00% LTS bulk [h, −20° C.]: >1000 h PYP-2-3 8.00% LTSbulk [h, −30° C.]: >1000 h

Example M360

B(S)-2O-O5 4.00% Clearing point [° C.]: 74 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.1039 CC-4-V1 22.00% ε_(∥) [1 kHz, 20° C.]: 3.4 CCH-24 8.00% ε_(⊥)[1 kHz, 20° C.]: 6.5 CCH-25 5.00% Δε [1 kHz, 20° C.]: −3.1 CCY-3-O28.50% K₁ [pN, 20° C.]: 14.2 CPY-3-O2 12.00% K₃ [pN, 20° C.]: 14.2CY-3-O2 15.00% V₀ [V, 20° C.]: 2.26 CY-3-O4 6.50% γ₁ [mPa s, 20° C.]: 98PYP-2-3 11.00% LTS bulk [h, −20° C.]: >1000 h

Example M361

B(S)-2O-O4 5.00% Clearing point [° C.]: 74 B(S)-2O-O5 5.00% Δn [589 nm,20° C.]: 0.1348 CC-3-V1 8.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CC-4-V1 22.00%ε_(⊥) [1 kHz, 20° C.]: 6.6 CCP-3-1 7.00% Δε [1 kHz, 20° C.]: −3.1CCY-3-O2 8.00% K₁ [pN, 20° C.]: 17.1 CCY-5-O2 4.00% K₃ [pN, 20° C.]:17.9 CY-3-O2 7.50% V₀ [V, 20° C.]: 2.55 PP-1-2V1 14.00% γ₁ [mPa s, 20°C.]: 104 PY-1-O2 9.50% LTS bulk [h, −20° C.]: >1000 h PYP-2-3 10.00%

Example M362

CC-3-V1 9.00% Clearing point [° C.]: 74.5 CC-4-V1 6.00% Δn [589 nm, 20°C.]: 0.0805 CCH-301 10.00% ε_(∥) [1 kHz, 20° C.]: 3.4 CCH-303 7.00%ε_(⊥) [1 kHz, 20° C.]: 6.4 CCH-34 5.00% Δε [1 kHz, 20° C.]: −3.0 CCH-355.5% K₁ [pN, 20° C.]: 14.0 CCY-3-1 4.00% K₃ [pN, 20° C.]: 15.8 CCY-3-O17.00% V₀ [V, 20° C.]: 2.43 CCY-3-O2 15.00% γ₁ [mPa s, 20° C.]: 99CPY-2-O2 4.50% LTS bulk [h, −20° C.]: >1000 h CPY-3-O2 2.50% CY-3-O215.50% CY-3-O4 1.50% PCH-301 6.50% PY-3-O2 1.00%

Example M363

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM362 is mixed with 0.3% of the polymerisable compound of the formula

and 0.001% of Irganox 1076. Example M364

Zur Herstellung einer SA-VA (self-alignment-VA)-Mischung, the mixtureaccording to Example M362 is mixed with 0.3% of the polymerisablecompound of the formula

0.001% of Irganox 1076 and

0.6% of the compound of the formula

Example M365

B(S)-2O-O5 4.00% Clearing point [° C.]: 74.5 CC-3-V1 4.00% Δn [589 nm,20° C.]: 0.0905 CC-4-V1 12.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-301 5.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCH-34 9.00% Δε [1 kHz, 20° C.]: −3.2 CCH-358.00% K₁ [pN, 20° C.]: 14.9 CCP-3-1 8.00% K₃ [pN, 20° C.]: 16.2 CCY-3-O211.00% V₀ [V, 20° C.]: 2.37 CCY-5-O2 8.50% γ₁ [mPa s, 20° C.]: 96CY-3-O2 15.00% LTS bulk [h, −20° C.]: >1000 h PCH-301 5.00% LTS bulk [h,−25° C.]: >1000 h PY-1-O2 10.50%

Example M366

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM365 is mixed with 0.25% of the polymerisable compound of the formula

Example M367

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM365 is mixed with 0.25% of the polymerisable compound of the formula

Example M368

B(S)-2O-O4 2.00% Clearing point [° C.]: 75.1 B(S)-2O-O5 3.00% Δn [589nm, 20° C.]: 0.1037 BCH-32 4.50% ε_(∥) [1 kHz, 20° C.]: 3.4 CC-3-V17.00% ε_(⊥) [1 kHz, 20° C.]: 6.3 CC-4-V1 16.00% Δε [1 kHz, 20° C.]: −3.0CCH-301 0.50% K₁ [pN, 20° C.]: 15.4 CCH-303 2.00% K₃ [pN, 20° C.]: 15.9CCH-34 5.00% V₀ [V, 20° C.]: 2.44 CCH-35 7.00% CCY-3-O2 6.50% CPY-2-O26.00% CPY-3-O2 10.00% CY-3-O2 15.00% CY-3-O4 4.50% PCH-302 6.50%PP-1-2V1 4.50%

Example M369

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM368 is mixed with 0.3% of the polymerisable compound of the formula

and 0.001% of Irganox 1076. Example M370

B(S)-2O-O4 5.00% Clearing point [° C.]: 74 B(S)-2O-O5 5.00% Δn [589 nm,20° C.]: 0.1353 CC-3-V1 8.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-4-V1 22.50%ε_(⊥) [1 kHz, 20° C.]: 7.0 CCP-3-1 7.50% Δε [1 kHz, 20° C.]: −3.4CCY-3-O2 8.00% K₁ [pN, 20° C.]: 16.9 CCY-5-O2 4.00% K₃ [pN, 20° C.]:17.7 CY-3-O2 4.50% V₀ [V, 20° C.]: 2.42 PP-1-2V1 10.50% γ₁ [mPa s, 20°C.]: 110 PY-1-O2 15.00% PYP-2-3 10.00%

Example M371

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM370 is mixed with 0.3% of the polymerisable compound of the formula

Example M372

B(S)-2O-O4 3.50% Clearing point [° C.]: 74.5 B(S)-2O-O5 4.50% Δn [589nm, 20° C.]: 0.1031 BCH-32 4.00% ε_(∥) [1 kHz, 20° C.]: 3.4 CC-3-V15.00% ε_(⊥) [1 kHz, 20° C.]: 6.4 CC-4-V1 16.50% Δε [1 kHz, 20° C.]: −3.0CCH-301 12.50% K₁ [pN, 20° C.]: 15.4 CCH-303 1.50% K₃ [pN, 20° C.]: 15.8CCH-34 4.00% V₀ [V, 20° C.]: 2.45 CCH-35 5.00% γ₁ [mPa s, 20° C.]: 97CCY-3-O2 10.00% CPY-3-O2 11.50% CY-3-O2 14.00% PP-1-2V1 8.00%

Example M373

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM372 is mixed with 0.3% of the polymerisable compound of the formula

and 0.001% of Irganox 1076. Example M374

CC-3-V1 8.50% Clearing point [° C.]: 74 CC-4-V1 14.00% Δn [589 nm, 20°C.]: 0.1088 CCH-23 9.50% ε_(∥) [1 kHz, 20° C.]: 3.4 CCP-3-1 9.00% ε_(⊥)[1 kHz, 20° C.]: 6.2 CCY-3-O1 6.00% Δε [1 kHz, 20° C.]: −2.8 CCY-3-O28.00% K₁ [pN, 20° C.]: 15.5 CCY-5-O2 8.00% K₃ [pN, 20° C.]: 17.6 CY-3-O210.00% V₀ [V, 20° C.]: 2.67 PP-1-2V1 9.00% γ₁ [mPa s, 20° C.]: 104PY-1-O2 15.00% PYP-2-3 3.00%

Example M375

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM372 is mixed with 0.3% of the polymerisable compound of the formula

Example M376

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM362 is mixed with 0.3% of the polymerisable compound of the formula

and 0.001% of Irganox 1076. Example M377

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM242 is mixed with 0.3% of the polymerisable compound of the formula

and 0.001% of Irganox 1076. Example M378

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM361 is mixed with 0.3% of the polymerisable compound of the formula

Example M379

CCP-3-1 10.00% Clearing point [° C.]: 78.8 CCY-2-1 1.50% Δn [589 nm, 20°C.]: 0.1017 CCY-3-O2 8.50% ε_(∥) [1 kHz, 20° C.]: 3.7 CCY-4-O2 9.00%ε_(⊥) [1 kHz, 20° C.]: 7.1 CPY-3-O2 9.50% Δε [1 kHz, 20° C.]: −3.4PYP-2-3 10.00% K₁ [pN, 20° C.]: 15.0 B(S)-2O-O5 4.00% K₃ [pN, 20° C.]:14.9 CC-3-V1 6.00% V₀ [V, 20° C.]: 2.20 CC-4-V1 5.00% γ₁ [mPa s, 20°C.]: 110 CCH-23 18.00% CCH-35 4.00% CY-3-O2 5.00% Y-4O-O4 9.50%

Example M380

The mixture according to Example M379 is stabilised with 0.04% of thecompound of the formula

Example M381

The mixture according to Example M379 is stabilised with 0.04% of thecompound of the formula

and0.03% of the compound of the formula

Example M382

B(S)-2O-O5 4.00% Clearing point [° C.]: 79.9 CCP-V-1 6.50% Δn [589 nm,20° C.]: 0.1019 CCY-3-O2 10.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCY-3-O39.00% ε_(⊥) [1 kHz, 20° C.]: 7.1 CLY-2-O4 2.00% Δε [1 kHz, 20° C.]: −3.4CPY-3-O2 10.00% K₁ [pN, 20° C.]: 15.1 PYP-2-3 9.50% K₃ [pN, 20° C.]:14.7 CC-3-V1 8.00% V₀ [V, 20° C.]: 2.18 CC-4-V1 5.00% γ₁ [mPa s, 20°C.]: 109 CCH-23 18.00% CCH-35 5.00% CY-3-O2 5.00% Y-4O-O4 8.00%

Example M383

The mixture according to Example M379 is stabilised with 0.04% of thecompound of the formula

and0.03% of the compound of the formula

Example M384

BCH-32 5.00% Clearing point [° C.]: 74.5 CC-3-V1 6.00% Δn [589 nm, 20°C.]: 0.1024 CC-4-V1 8.00% ε_(∥) [1 kHz, 20° C.]: 3.7 CCH-301 5.00% ε_(⊥)[1 kHz, 20° C.]: 7.0 CCH-34 6.50% Δε [1 kHz, 20° C.]: −3.3 CCP-3-1 8.00%K₁ [pN, 20° C.]: 13.5 CCY-3-O1 8.00% K₃ [pN, 20° C.]: 16.5 CCY-3-O211.50% V₀ [V, 20° C.]: 2.33 CPY-3-O2 5.50% γ₁ [mPa s, 20° C.]: 114CY-3-O2 15.00% PCH-302 7.50% PY-1-O2 3.00% PY-2-O2 11.00%

Example M385

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM384 is mixed with 0.25% of the polymerisable compound of the formula

and 0.01% of the compound of the formula

Example M386

The mixture according to Example M384 is stabilised with 0.01% of thecompound of the formula

Example M387

CCP-V-1 5.00% Clearing point [° C.]: 94.7 CCP-V2-1 5.00% Δn [589 nm, 20°C.]: 0.1017 CCY-3-O2 10.00% Δε [1 kHz, 20° C.]: −3.8 CCY-3-O3 3.00% K₁[pN, 20° C.]: 19.5 CCY-4-O2 8.00% K₃ [pN, 20° C.]: 16.8 CLY-3-O3 7.00%V₀ [V, 20° C.]: 2.22 PYP-2-3 4.50% γ₁ [mPa s, 20° C.]: 123 B(S)-2O-O43.50% B(S)-2O-O5 6.00% B(S)-2O-O6 4.00% CC-3-V1 8.00% CC-4-V1 16.00%CCH-23 15.00% Y-4O-O4 5.00%

Example M388

CCP-3-1 10.00% Clearing point [° C.]: 91.7 CCP-3-3 3.50% Δn [589 nm, 20°C.]: 0.1023 CCY-3-O2 11.00% Δε [1 kHz, 20° C.]: −3.8 CCY-3-O3 4.50% K₁[pN, 20° C.]: 19.2 CCY-4-O2 4.00% K₃ [pN, 20° C.]: 17.0 CLY-2-O4 1.50%V₀ [V, 20° C.]: 2.22 CLY-3-O3 4.50% γ₁ [mPa s, 20° C.]: 125 PYP-2-35.00% B(S)-2O-O4 4.00% B(S)-2O-O5 5.00% B(S)-2O-O6 4.00% CC-3-V1 8.00%CC-4-V1 14.00% CCH-23 14.00% Y-4O-O4 7.00%

Example M389

B(S)-2O-O5 0.25% Clearing point [° C.]: 75.1 BCH-32 1.50% Δn [589 nm,20° C.]: 0.1038 CC-3-V1 8.00% ε_(∥) [1 kHz, 20° C.]: 3.4 CC-4-V1 20.00%ε_(⊥) [1 kHz, 20° C.]: 6.5 CCH-303 1.50% Δε [1 kHz, 20° C.]: −3.0 CCH-346.00% K₁ [pN, 20° C.]: 15.6 CCH-35 8.00% K₃ [pN, 20° C.]: 16.0 CCY-3-O29.50% V₀ [V, 20° C.]: 2.44 CPY-2-O2 6.00% γ₁ [mPa s, 20° C.]: 99CPY-3-O2 11.00% CY-3-O2 12.50% PP-1-2V1 2.75% PY-1-O2 5.50% PY-2-O24.50% PY-3-O2 3.00%

Example M390

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM389 is mixed with 0.3% of the polymerisable compound of the formula

and 0.001% of Irganox 1076. Example M391

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM389 is mixed with 0.35% of the polymerisable compound of the formula

Example M392

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM389 is mixed with 0.3% of the polymerisable compound of the formula

Example M393

CC-3-V1 4.00% Clearing point [° C.]: 74.7 CC-4-V1 7.00% Δn [589 nm, 20°C.]: 0.0808 CCH-3O3 5.50% ε_(∥) [1 kHz, 20° C.]: 3.4 CCH-34 8.50% ε_(⊥)[1 kHz, 20° C.]: 6.6 CCH-35 9.00% Δε [1 kHz, 20° C.]: −3.2 CCP-3-1 3.50%K₁ [pN, 20° C.]: 14.3 CCY-3-1 8.00% K₃ [pN, 20° C.]: 16.4 CCY-3-O211.00% V₀ [V, 20° C.]: 2.38 CCY-5-O2 9.00% γ₁ [mPa s, 20° C.]: 116CY-3-O2 15.00% CY-3-O4 2.00% CY-5-O2 9.00% PCH-301 5.00% PY-1-O2 3.50%

Example M394

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM393 is mixed with 0.25% of the polymerisable compound of the formula

Example M395

B(S)-2O-O5 2.00% Clearing point [° C.]: 74.3 CC-3-V1 4.00% Δn [589 nm,20° C.]: 0.0850 CC-4-V1 13.50% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-301 2.00%ε_(⊥) [1 kHz, 20° C.]: 6.7 CCH-303 4.50% Δε [1 kHz, 20° C.]: −3.2 CCH-345.50% K₁ [pN, 20° C.]: 14.3 CCH-35 9.00% K₃ [pN, 20° C.]: 16.3 CCP-3-15.00% V₀ [V, 20° C.]: 2.37 CCY-3-O1 2.50% γ₁ [mPa s, 20° C.]: 107CCY-3-O2 11.00% CCY-5-O2 9.00% CY-3-O2 15.00% CY-5-O2 5.00% PCH-3015.00% PY-1-O2 7.00%

Example M396

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM395 is mixed with 0.25% of the polymerisable compound of the formula

Example M397

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM395 is mixed with 0.25% of the polymerisable compound of the formula

Example M398

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM395 is mixed with 0.25% of the polymerisable compound of the formula

Example M399

CC-3-V1 4.00% Clearing point [° C.]: 74.6 CC-4-V1 11.00% Δn [589 nm, 20°C.]: 0.0895 CCH-303 3.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-34 9.00% ε_(⊥)[1 kHz, 20° C.]: 6.7 CCH-35 8.50% Δε [1 kHz, 20° C.]: −3.2 CCP-3-1 6.00%K₁ [pN, 20° C.]: 14.3 CCY-3-O1 4.00% K₃ [pN, 20° C.]: 16.4 CCY-3-O211.00% V₀ [V, 20° C.]: 2.37 CCY-5-O2 9.50% γ₁ [mPa s, 20° C.]: 108CY-3-O2 15.00% PCH-301 5.00% PY-1-O2 10.00% PY-2-O2 4.00%

Example M400

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM399 is mixed with 0.25% of the polymerisable compound of the formula

Example M401

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM399 is mixed with 0.25% of the polymerisable compound of the formula

Example M402

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM399 is mixed with 0.25% of the polymerisable compound of the formula

Example M403

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM399 is mixed with 0.3% of the polymerisable compound of the formula

Example M404

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM399 is mixed with 0.3% of the polymerisable compound of the formula

Example M405

CCP-V-1 12.00% Clearing point [° C.]: 94.7 CCP-V2-1 7.00% Δn [589 nm,20° C.]: 0.1024 CCY-3-O2 6.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CLY-2-O4 7.00%ε_(⊥) [1 kHz, 20° C.]: 7.3 CLY-3-O3 6.50% Δε [1 kHz, 20° C.]: −3.8CLY-4-O2 5.00% K₁ [pN, 20° C.]: 18.5 PGIY-2-O4 1.50% K₃ [pN, 20° C.]:17.0 B(S)-2O-O4 4.00% V₀ [V, 20° C.]: 2.21 B(S)-2O-O5 4.00% γ₁ [mPa s,20° C.]: 125 B(S)-2O-O6 4.00% CC-3-V1 7.00% CC-4-V1 12.00% CCH-23 13.00%CY-3-O2 8.00% Y-4O-O4 3.00%

Example M406

B(S)-2O-O5 4.00% Clearing point [° C.]: 74.5 CC-3-V1 6.00% Δn [589 nm,20° C.]: 0.0981 CC-4-V1 14.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-34 8.50%ε_(⊥) [1 kHz, 20° C.]: 6.8 CCP-3-1 7.50% Δε [1 kHz, 20° C.]: −3.2CCY-3-O1 8.00% K₁ [pN, 20° C.]: 13.4 CCY-3-O2 10.50% K₃ [pN, 20° C.]:16.5 CLY-3-O2 1.00% V₀ [V, 20° C.]: 2.38 CPY-3-O2 4.50% γ₁ [mPa s, 20°C.]: 103 CY-3-O2 11.50% PCH-301 15.00% PY-1-O2 8.00% PY-2-O2 1.50%

Example M407

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM406 is mixed with 0.3% of the polymerisable compound of the formula

Example M408

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM406 is mixed with 0.35% of the polymerisable compound of the formula

Example M409

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM406 is mixed with 0.35% of the polymerisable compound of the formula

Example M410

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM406 is mixed with 0.35% of the polymerisable compound of the formula

Example M411

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM406 is mixed with 0.35% of the polymerisable compound of the formula

Example M412

B(S)-2O-O5 4.00% Clearing point [° C.]: 74.3 CC-3-V1 6.00% Δn [589 nm,20° C.]: 0.0984 CC-4-V1 14.00% ε_(∥) [1 kHz, 20° C.]: 3.5 CCH-34 8.50%ε_(⊥) [1 kHz, 20° C.]: 6.6 CCH-35 2.00% Δε [1 kHz, 20° C.]: −3.1 CCP-3-17.00% K₁ [pN, 20° C.]: 13.4 CCY-3-O2 8.00% K₃ [pN, 20° C.]: 16.3CCY-4-O2 6.00% V₀ [V, 20° C.]: 2.41 CLY-3-O2 1.00% γ₁ [mPa s, 20° C.]:102 CPY-3-O2 8.00% CY-3-O2 12.50% PCH-301 14.50% PY-1-O2 8.50%

Example M413

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM412 is mixed with 0.35% of the polymerisable compound of the formula

Example M414

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM412 is mixed with 0.35% of the polymerisable compound of the formula

Example M415

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM412 is mixed with 0.35% of the polymerisable compound of the formula

Example M416

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM412 is mixed with 0.35% of the polymerisable compound of the formula

Example M417

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM412 is mixed with 0.35% of the polymerisable compound of the formula

Example M418

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM231 is mixed with 0.3% of the polymerisable compound of the formula

Example M419

For the preparation of an SA-VA mixture, the mixture according toExample M418 is mixed with 0.4% of the compound of the formula

Example M420

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM232 is mixed with 0.3% of the polymerisable compound of the formula

Example M421

CCY-3-O2 9.50% Clearing point [° C.]: 74.9 CPY-2-O2 11.00% Δn [589 nm,20° C.]: 0.1081 CPY-3-O2 10.50% ε_(∥) [1 kHz, 20° C.]: 3.7 B-2O-O5 1.50%ε_(⊥) [1 kHz, 20° C.]: 7.5 CC-3-V1 8.00% Δε [1 kHz, 20° C.]: −3.8CC-4-V1 17.00% K₁ [pN, 20° C.]: 14.4 CCH-34 5.50% K₃ [pN, 20° C.]: 15.2CCH-35 8.00% V₀ [V, 20° C.]: 2.11 CY-3-O2 11.00% γ₁ [mPa s, 20° C.]: 92PY-1-O2 6.00% PY-3-O2 12.00%

Example M422

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM421 is mixed with 0.3% of the polymerisable compound of the formula

Example M423

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM237 is mixed with 0.3% of the polymerisable compound of the formula

Example M424

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM237 is mixed with 0.3% of the polymerisable compound of the formula

Example M425

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM233 is mixed with 0.3% of the polymerisable compound of the formula

Example M426

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM240 is mixed with 0.3% of the polymerisable compound of the formula

Example M427

B-2O-O5 4.00% Clearing point [° C.]: 75.1 CC-3-V1 8.00% Δn [589 nm, 20°C.]: 0.1117 CC-4-V1 16.00% Δε [1 kHz, 20° C.]: −4.1 CCH-34 8.00% K₁ [pN,20° C.]: 15.3 CCH-35 6.00% K₃ [pN, 20° C.]: 15.9 CCY-3-O2 11.00% V₀ [V,20° C.]: 2.05 CPY-2-O2 9.00% γ₁ [mPa s, 20° C.]: 120 CPY-3-O2 10.00%CY-3-O2 11.00% PPGU-3-F 0.50% PY-1-O2 6.00% PY-3-O2 10.50%

Example M428

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM427 is mixed with 0.3% of the polymerisable compound of the formula

Example M429

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM427 is mixed with 0.3% of the polymerisable compound of the formula

Example M430

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM427 is mixed with 0.3% of the polymerisable compound of the formula

Example M431

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM427 is mixed with 0.3% of the polymerisable compound of the formula

Example M432

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM427 is mixed with 0.3% of the polymerisable compound of the formula

Example M433

B(S)-2O-O4 4.00% Clearing point [° C.]: 74.1 B(S)-2O-O5 5.00% Δn [589nm, 20° C.]: 0.1191 BCH-32 7.50% ε_(∥) [1 kHz, 20° C.]: 3.8 CC-3-V18.00% ε_(⊥) [1 kHz, 20° C.]: 7.7 CC-4-V1 11.00% Δε [1 kHz, 20° C.]: −4.0CCH-34 8.00% K₁ [pN, 20° C.]: 14.5 CCH-35 6.00% K₃ [pN, 20° C.]: 14.8CCY-3-O2 11.00% V₀ [V, 20° C.]: 2.11 CPY-2-O2 1.00% γ₁ [mPa s, 20° C.]:111 CPY-3-O2 8.00% CY-3-O2 5.00% PCH-302 5.00% PY-1-O2 6.50% PY-2-O27.00% PY-3-O2 7.00%

Example M434

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM433 is mixed with 0.3% of the polymerisable compound of the formula

Example M435

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM433 is mixed with 0.3% of the polymerisable compound of the formula

Example M436

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM421 is mixed with 0.3% of the polymerisable compound of the formula

Example M437

BCH-32 6.00% Clearing point [° C.]: 74.2 CCY-3-O1 5.00% Δn [589 nm, 20°C.]: 0.1188 CCY-3-O2 11.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CPY-3-O2 12.00%ε_(⊥) [1 kHz, 20° C.]: 6.9 CC-3-V1 7.50% Δε [1 kHz, 20° C.]: −3.3CC-4-V1 17.00% K₁ [pN, 20° C.]: 14.9 CCH-34 9.00% K₃ [pN, 20° C.]: 15.6CY-3-O2 2.00% V₀ [V, 20° C.]: 2.29 PP-1-4 4.00% γ₁ [mPa s, 20° C.]: 109PY-1-O2 8.00% PY-2-O2 6.00% PY-3-O2 12.50%

Example M438

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM437 is mixed with 0.3% of the polymerisable compound of the formula

Example M439

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM437 is mixed with 0.35% of the polymerisable compound of the formula

Example M440

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM437 is mixed with 0.35% of the polymerisable compound of the formula

Example M441

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM437 is mixed with 0.35% of the polymerisable compound of the formula

Example M442

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM437 is mixed with 0.3% of the polymerisable compound of the formula

Example M443

The following stabilisers are added to the mixture according to ExampleM437:

0.04% o

0.01% of

Example M444

The following stabilisers are added to the mixture according to ExampleM382:

0.03% of

0.1% of

Example M445

The following stabiliser is added to the mixture according to ExampleM382:

0.04% of

Example M446

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM14 is mixed with 0.3% of the polymerisable compound of the formula

and 0.001% of Irganox 1076. Example M447

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM14 is mixed with 0.3% of the polymerisable compound of the formula

and 0.001% of Irganox 1076. Example M448

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM14 is mixed with 0.3% of the polymerisable compound of the formula

Example M449

The following stabiliser is added to the mixture according to ExampleM14:

0.03% of

Example M450

CC-3-V 10.50% Clearing point [° C.]: 74.5 CC-3-V1 5.50% Δn [589 nm, 20°C.]: 0.1033 CC-4-V1 20.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-34 2.00% ε_(⊥)[1 kHz, 20° C.]: 6.9 CCH-35 1.50% Δε [1 kHz, 20° C.]: −3.3 CCY-3-1 2.00%K₁ [pN, 20° C.]: 14.4 CCY-3-O1 7.50% K₃ [pN, 20° C.]: 15.1 CCY-3-O211.00% CCY-4-O2 8.50% CLY-2-O4 1.00% CLY-3-O2 2.00% PP-1-2V1 3.50%PY-1-O2 9.50% PY-2-O2 9.50% PY-3-O2 6.00%

Example M451

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM450 is mixed with 0.3% of the polymerisable compound of the formula

0.001% Irganox 1076 and

0.015%

Example M452

For the preparation of an SA-VA (self-alignment VA) mixture, the mixtureaccording to Example M451 is mixed with 0.6% of the compound of theformula

Example M453

CC-3-V1 7.50% Clearing point [° C.]: 74.5 CC-4-V1 20.00% Δn [589 nm, 20°C.]: 0.1030 CCH-34 5.00% Δε [1 kHz, 20° C.]: −3.3 CCH-35 7.50% K₁ [pN,20° C.]: 15.1 CCP-3-1 2.00% K₃ [pN, 20° C.]: 15.4 CCY-3-O1 8.00%CCY-3-O2 12.00% CCY-4-O2 3.00% CLY-3-O2 4.00% CY-3-O2 1.50% PY-1-O29.50% PY-2-O2 9.50% PY-3-O2 10.50%

Example M454

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM453 is mixed with 0.3% of the polymerisable compound of the formula

0.001% Irganox 1076 and

0.015%

Example M455

For the preparation of an SA-VA (self-alignment VA) mixture, the mixtureaccording to Example M454 is mixed with 0.6% of the compound of theformula

Example M456

CC-3-V1 8.00% Clearing point [° C.]: 75.3 CC-4-V1 15.50% CCH-23 10.00%CCP-3-1 9.50% CCY-3-O1 7.00% CCY-3-O2 8.00% CCY-5-O2 7.00% CY-3-O210.00% PP-1-2V1 7.00% PY-1-O2 15.00% PYP-2-3 3.00%

Example M457

The following stabiliser is added to the mixture according to ExampleM456:

0.015%

Example M458

The following stabiliser is added to the mixture according to ExampleM456:

0.015%

Example M459

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM456 is mixed with 0.3% of the polymerisable compound of the formula

and0.015%

Example M460

CC-3-V1 2.50% Clearing point [° C.]: 105.3 CC-4-V1 10.00% CCH-301 3.00%CCH-34 4.00% CCH-35 4.00% CCP-3-1 6.00% CCP-3-3 6.00% CCY-3-O1 4.00%CCY-3-O2 4.00% CCY-3-O3 4.00% CCY-4-O2 4.00% CCY-5-O2 4.00% CPY-2-O210.00% CPY-3-O2 10.00% CY-3-O2 6.50% CY-3-O4 10.00% PYP-2-3 5.00%PYP-2-4 3.00%

Example M461

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM460 is mixed with 0.3% of the polymerisable compound of the formula

and0.02%

Example M462

The following stabiliser is added to the mixture according to ExampleM460:

0.02%

Example M463

For the preparation of an SA-VA (self-alignment VA) mixture, the mixtureaccording to Example M389 is mixed with 0.3% of the polymerisablecompound of the formula

0.001% Irganox 1076 and

0.6% of the compound of the formula

Example M464

BCH-52 9.00% Clearing point [° C.]: 105 CC-3-V1 2.00% Δn [589 nm, 25°C.]: 0.1122 CC-4-V1 12.50% ε_(∥) [1 kHz, 25° C.]: 3.4 CCH-301 2.00%ε_(⊥) [1 kHz, 25° C.]: 6.8 CCH-34 3.50% Δε [1 kHz, 25° C.]: −3.4 CCH-354.00% K₁ [pN, 25° C.]: 19.9 CCP-3-1 7.50% K₃ [pN, 25° C.]: 17.7 CCY-3-O14.00% V₀ [V, 20° C.]: 2.41 CCY-3-O2 4.00% γ₁ [mPa s, 25° C.]: 153CCY-3-O3 4.00% CCY-4-O2 4.00% CCY-5-O2 4.00% CPY-2-O2 10.00% CPY-3-O210.00% CY-3-O4 12.50% PY-1-O2 7.00%

Example M465

The following stabiliser is added to the mixture according to ExampleM464:

0.02%

Example M466

For the preparation of an SA-VA (self-alignment VA) mixture, the mixtureaccording to Example M389 is mixed with

0.3% of the polymerisable compound of the formula

0.001% Irganox 1076 and

0.6% of the compound of the formula

Example M467

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM464 is mixed with 0.3% of the polymerisable compound of the formula

and0.02%

Example M468

B(S)-2O-O4 4.00% Clearing point [° C.]: 74.5 B(S)-2O-O5 4.00% Δn [589nm, 20° C.]: 0.1257 B(S)-2O-O6 1.00% Δε [1 kHz, 20° C.]: −3.1 BCH-328.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V1 6.00% ε_(⊥) [1 kHz, 20° C.]:6.7 CC-4-V1 14.00% K₁ [pN, 20° C.]: 14.8 CCH-34 5.00% K₃ [pN, 20° C.]:16.8 CCP-3-1 7.00% CCP-3-3 1.50% CLY-3-O2 3.00% CPY-3-O2 10.50% PCH-30216.00% PY-1-O2 10.00% PY-2-O2 10.00%

Example M469

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM468 is mixed with 0.35% of the polymerisable compound of the formula

0.001% Irganox 1076 and

0.01%

Example M470

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM468 is mixed with 0.3% of the polymerisable compound of the formula

0.001% Irganox 1076 and

0.01%

Example M471

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM468 is mixed with 0.3% of the polymerisable compound of the formula

0.001% Irganox 1076 and

0.01%

Example M472

B(S)-2O-O5 5.00% Clearing point [° C.]: 73.7 CCP-3-1 9.00% Δn [589 nm,20° C.]: 0.1120 CCY-3-O2 6.00% Δε [1 kHz, 20° C.]: −3.4 CLY-3-O2 1.00%ε_(∥) [1 kHz, 20° C.]: 3.6 CPY-3-O2 7.50% ε_(⊥) [1 kHz, 20° C.]: 6.9B(S)-2O-O4 4.00% K₁ [pN, 20° C.]: 16.3 CC-3-V1 8.00% K₃ [pN, 20° C.]:16.2 CC-4-V1 15.50% CCH-34 8.00% CCH-35 7.50% PCH-302 5.00% PY-1-O28.00% PY-2-O2 8.00% PY-3-O2 7.50%

Example M473

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM472 is mixed with 0.3% of the polymerisable compound of the formula

and0.02%

Example M474

CC-3-V1 7.50% Clearing point [° C.]: 75 CC-4-V1 19.50% Δn [589 nm, 20°C.]: 0.1041 CCH-301 5.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CCH-34 5.00% ε_(⊥)[1 kHz, 20° C.]: 6.7 CCP-3-1 11.00% Δε [1 kHz, 20° C.]: −3.1 CLY-3-O25.00% K₁ [pN, 20° C.]: 14.0 CPY-2-O2 6.00% K₃ [pN, 20° C.]: 15.7CPY-3-O2 11.50% V₀ [V, 20° C.]: 2.37 CY-3-O2 15.00% γ₁ [mPa s, 20° C.]:101 PY-1-O2 6.50% PY-2-O2 7.50%

Example M475

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM474 is mixed with 0.3% of the polymerisable compound of the formula

0.001% Irganox 1076 and

0.015%

Example M476

B(S)-2O-O6 0.25% Clearing point [° C.]: 74.5 BCH-32 5.50% Δn [589 nm,20° C.]: 0.1028 CC-3-V 10.00% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-3-V1 7.50%ε_(⊥) [1 kHz, 20° C.]: 6.7 CC-4-V1 16.50% Δε [1 kHz, 20° C.]: −3.1CCH-35 0.25% K₁ [pN, 20° C.]: 13.8 CCP-3-1 7.50% K₃ [pN, 20° C.]: 15.5CCY-3-O2 11.00% V₀ [V, 20° C.]: 2.37 CCY-3-O3 1.00% γ₁ [mPa s, 20° C.]:96 CCY-4-O2 7.00% CCY-5-O2 2.00% CY-3-O2 9.00% PY-1-O2 9.00% PY-2-O29.00% PY-3-O2 4.50%

Example M477

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM476 is mixed with 0.3% of the polymerisable compound of the formula

0.001% Irganox 1076 and

0.015%

Example M478

For the preparation of an SA-VA (self-alignment VA) mixture, the mixtureaccording to Example M477 is mixed with 0.6% of the compound of theformula

Example M479

BCH-32 4.50% Clearing point [° C.]: 74.8 CC-3-V 15.00% Δn [589 nm, 20°C.]: 0.1030 CC-3-V1 7.50% ε_(∥) [1 kHz, 20° C.]: 3.6 CC-4-V1 12.50%ε_(⊥) [1 kHz, 20° C.]: 6.8 CCP-3-1 7.00% Δε [1 kHz, 20° C.]: −3.1CCY-3-O1 7.00% K₁ [pN, 20° C.]: 13.8 CCY-3-O2 10.50% K₃ [pN, 20° C.]:15.4 CCY-4-O2 6.50% V₀ [V, 20° C.]: 2.35 CY-3-O2 4.50% γ₁ [mPa s, 20°C.]: 94 PY-1-O2 9.50% PY-2-O2 9.00% PY-3-O2 6.50%

Example M480

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM479 is mixed with 0.3% of the polymerisable compound of the formula

0.001% Irganox 1076 and

0.015%

Example M481

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM479 is mixed with 0.3% of the polymerisable compound of the formula

0.001% Irganox 1076 and

0.015%

Example M482

For the preparation of an SA-VA (self-alignment VA) mixture, the mixtureaccording to Example M480 is mixed with 0.6% of the compound of theformula

Example M483

B(S)-2O-O4 4.00% Clearing point [° C.]: 74 B(S)-2O-O5 5.00% Δn [589 nm,20° C.]: 0.1089 BCH-32 7.50% ε_(∥) [1 kHz, 20° C.]: 3.6 BCH-52 2.00%ε_(⊥) [1 kHz, 20° C.]: 6.5 CC-3-V1 7.50% Δε [1 kHz, 20° C.]: −3.0CC-4-V1 18.00% K₁ [pN, 20° C.]: 15.3 CCH-34 8.00% K₃ [pN, 20° C.]: 13.9CCH-35 7.00% V₀ [V, 20° C.]: 2.29 CCH-301 2.00% γ₁ [mPa s, 20° C.]: 75CCP-3-1 3.00% CCY-3-O2 8.00% CPY-3-O2 3.00% CY-3-O2 4.00% PY-1-O2 6.00%PY-2-O2 3.00% PY-3-O2 12.00%

Example M484

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM483 is mixed with 0.3% of the polymerisable compound of the formula

Example M485

For the preparation of a PS (polymer stabilised) mixture, for examplefor PS-VA, PS-IPS or PS-FFS displays, the mixture according to ExampleM483 is mixed with 0.3% of the polymerisable compound of the formula

Example M486

CC-3-V1  7.00% Clearing point [° C.]: 74.5 CC-3-V2 17.00% Δn [589 nm,20° C.]: 0.0992 CCH-34  4.00% Δε [1 kHz, 20° C.]: −3.6 CCH-35  7.00% γ₁[mPa s, 20° C.]: 108 CCP-3-1  6.50% CCY-3-O2  6.00% CPY-2-O2  3.00%CPY-3-O2 11.00% CY-3-O2 15.50% CY-3-O4  7.00% PY-3-O2 11.00%

 5.00%

Example M48Z

CC-3-V1  7.00% Clearing point [° C.]: 74.5 CC-3-V2 17.00% Δn [589 nm,20° C.]: 0.0988 CCH-34  4.00% Δε [1 kHz, 20° C.]: −3.6 CCH-35  7.00% γ₁[mPa s, 20° C.]: 112 CCP-3-1  6.50% CCY-3-O2 11.00% CPY-2-O2  3.00%CPY-3-O2  6.00% CY-3-O2 15.50% CY-3-O4  7.00% PY-3-O2 11.00%

 5.00%

Example M488

CC-3-V1  7.00% Clearing point [° C.]: 74.5 CC-3-V2 17.00% Δn [589 nm,20° C.]: 0.989 CCH-34  4.00% Δε [1 kHz, 20° C.]: −3.6 CCH-35  7.00% γ₁[mPa s, 20° C.]: 111 CCP-3-1  6.50% CCY-3-O2 11.00% CPY-2-O2  3.00%CPY-3-O2 11.00% CY-3-O2 10.50% CY-3-O4  7.00% PY-3-O2 11.00%

 5.00%

Example M489

CC-3-V1  7.00% Clearing point [° C.]: 75 CC-3-V2 17.00% Δn [589 nm, 20°C.]: 0.0987 CCH-34  4.00% Δε [1 kHz, 20° C.]: −3.6 CCH-35  7.00% γ₁ [mPas, 20° C.]: 113 CCP-3-1  6.50% CCY-3-O2 11.00% CPY-2-O2  3.00% CPY-3-O211.00% CY-3-O2 15.50% CY-3-O4  7.00% PY-3-O2  6.00%

 5.00%

Example M490

CC-3-V1  7.00% Clearing point [° C.]: 74.5 CC-4-V1 18.00% Δn [589 nm,20° C.]: 0.0995 CCH-34  3.00% Δε [1 kHz, 20° C.]: −3.4 CCH-35  7.00% γ₁[mPa s, 20° C.]: 114 CCP-3-1  9.00% CCY-3-O2  5.00% CPY-3-O2  9.50%CY-3-O2 15.50% CY-3-O4  7.50% PY-3-O2 11.50% PGIY-2-O4  2.00%

 5.00%

Example M491

CC-3-V1  7.00% Clearing point [° C.]: 74.5 CC-4-V1 18.00% Δn [589 nm,20° C.]: 0.0993 CCH-34  3.00% Δε [1 kHz, 20° C.]: −3.4 CCH-35  7.00% γ₁[mPa s, 20° C.]: 115 CCP-3-1  9.00% CCY-3-O2 10.00% CPY-3-O2  4.50%CY-3-O2 15.50% CY-3-O4  7.50% PY-3-O2 11.50% PGIY-2-O4  2.00%

 5.00%

Example M492

CC-3-V1  7.00% Clearing point [° C.]: 74 CC-4-V1 18.00% Δn [589 nm, 20°C.]: 0.0996 CCH-34  3.00% Δε [1 kHz, 20° C.]: −3.4 CCH-35  7.00% γ₁ [mPas, 20° C.]: 113 CCP-3-1  9.00% CCY-3-O2 10.00% CPY-3-O2  9.50% CY-3-O210.50% CY-3-O4  7.50% PY-3-O2 11.50% PGIY-2-O4  2.00%

 5.00%

Example M493

CC-3-V1  7.00% Clearing point [° C.]: 75 CC-4-V1 18.00% Δn [589 nm, 20°C.]: 0.0994 CCH-34  3.00% Δε [1 kHz, 20° C.]: −3.4 CCH-35  7.00% γ₁ [mPas, 20° C.]: 115 CCP-3-1  9.00% CCY-3-O2 10.00% CPY-3-O2  9.50% CY-3-O215.50% CY-3-O4  7.50% PY-3-O2  6.50% PGIY-2-O4  2.00%

 5.00%

Without further elaboration, it is believed that one skilled in the artcan, using the preceding description, utilize the present invention toits fullest extent. The preceding preferred specific embodiments are,therefore, to be construed as merely illustrative, and not limitative ofthe remainder of the disclosure in any way whatsoever.

The entire disclosure[s] of all applications, patents and publications,cited herein and of corresponding German application No: DE102017010883.8, filed Nov. 24, 2017, and European application No:EP18197753.9, filed Sep. 28, 2018, are incorporated by reference herein.

The preceding examples can be repeated with similar success bysubstituting the generically or specifically described reactants and/oroperating conditions of this invention for those used in the precedingexamples.

From the foregoing description, one skilled in the art can ascertain theessential characteristics of this invention and, without departing fromthe spirit and scope thereof, can make various changes and modificationsof the invention to adapt it to various usages and conditions.

1. A liquid-crystalline medium comprising: at least one compoundselected from the group of the compounds of the formulae IA to IH,

in which Z¹ denotes a single bond, —CH₂CH₂—, —CH═CH—, —CH₂O—, —OCH₂,—CF₂O—, —OCF₂—, —COO—, —OCO—, —C₂F₄—, —(CH₂)₄—, —CHFCHF—, —CF₂CH₂—,—CH₂CF₂—, —C≡C—, —CF═CF—, —CH═CHCHO— or —CH₂CF₂O—; at least one compoundselected from the compounds of the formulae IIA and IIB:

in which R^(2A), R^(2B) and R^(2C) each, independently of one another,denote H, an alkyl or alkenyl radical having up to 15 C atoms which isunsubstituted, monosubstituted by CN or CF₃ or at least monosubstitutedby halogen, where, in addition, one or more CH₂ groups in these radicalsmay be replaced by —O—, —S—,

 —C≡C—, —CF₂O—, —OCF₂—, —OC—O— or —O—CO— in such a wav that O atoms arenot linked directly to one another, a cyclopropyl ring, cyclobutyl ringor cyclopentyl ring, L¹⁻⁴ each, independently of one another, denote F,Cl, CF₃ or CHF₂, L⁵ is CH₃, Z² and Z^(2′) each, independently of oneanother, denote a single bond, —CH₂CH₂—, —CH═CH—, —CF₂O—, —OCF₂—,—CH₂O—, —OCH₂—, —COO—, —OCO—, —C₂F₄—, —CF═CF—, —C≡C— or —CH═CHCH₂O—, pdenotes 0, 1 or 2, g denotes 0 or 1, and v denotes 1 to 6; and whereinthe medium has a negative dielectric anisotropy, Δε.
 2. Theliquid-crystalline medium according to claim 1, which comprises at leastone compound of at least one of the following formulae:


3. The liquid-crystalline medium according to claim 1, wherein theproportion of the compound(s) of the formulae IA to IH in the medium asa whole is 1-50% by weight.
 4. The liquid-crystalline medium accordingto claim 1, which additionally comprises one or more compounds selectedfrom the group of the compounds of the formulae IIA, IIB and IIC,

in which R^(2A), R^(2B) and R^(2C) each, independently of one another,denote H, an alkyl or alkenyl radical having up to 15 C atoms which isunsubstituted, monosubstituted by CN or CF₃ or at least monosubstitutedby halogen, where, in addition, one or more CH₂ groups in these radicalsmay be replaced by —O—, —S—,

 —C≡C—, —CF₂O—, —OCF₂—, —OC—O— or —O—CO— in such a way that O atoms arenot linked directly to one another, a cyclopropyl ring, cyclobutyl ringor cyclopentyl ring, L¹⁻⁴ each, independently of one another, denote F,Cl, CF₃ or CHF₂, Z² and Z^(2′) each, independently of one another,denote a single bond, —CH₂CH₂—, —CH═CH—, —CF₂O—, —OCF₂—, —CH₂O—, —OCH₂—,—COO—, —OCO—, —C₂F₄—, —CF═CF—, —C≡C— or —CH═CHCH₂O—, p denotes 0, 1 or2, q denotes 0 or 1, and v denotes 1 to
 6. 5. The liquid-crystallinemedium according to claim 1, wherein the medium additionally comprisesone or more compounds of the formula III,

in which R³¹ and R³² each, independently of one another, denote astraight-chain alkyl, alkenyl, alkoxy, alkoxyalkyl or alkenyloxy radicalhaving up to 12 C atoms,

denotes

 and Z³ denotes a single bond, —CH₂CH₂—, —CH═CH—, —CF₂O—, —OCF₂—,—CH₂O—, —OCH₂—, —COO—, —OCO—, —C₂F₄—, —C₄H₉—, —C≡C— or —CF═CF—.
 6. Theliquid-crystalline medium according to claim 1, wherein the mediumadditionally comprises one or more compounds of the formulae L-1 toL-11,

in which R, R¹ and R² each, independently of one another, denote H, analkyl or alkenyl radical having up to 15 C atoms which is unsubstituted,monosubstituted by CN or CF₃ or at least monosubstituted by halogen,where, in addition, one or more CH₂ groups in these radicals may bereplaced by —O—, —S—,

 —C≡C—, —OC—, —CF₂O—, —OCF₂—, —OC—O— or —O—CO— in such a way that Oatoms are not linked directly to one another, a cyclopropyl ring,cyclobutyl ring or cyclopentyl ring, alkyl denotes an alkyl radicalhaving 1-6 C atoms, and s denotes 1 or
 2. 7. The liquid-crystallinemedium according to claim 1, wherein the medium additionally comprisesone or more terphenyls of the formulae T-1 to T-22,

in which R denotes a straight-chain alkyl or alkoxy radical having 1-7 Catoms, m denotes 0, 1, 2, 3, 4, 5 or 6, and n denotes 0, 1, 2, 3 or 4.8. The liquid-crystalline medium according to claim 1, wherein themedium additionally comprises one or more compounds of the formulae O-1to O-17,

in which R¹ and R² each, independently of one another, denote H, analkyl or alkenyl radical having up to 15 C atoms which is unsubstituted,monosubstituted by CN or CF₃ or at least monosubstituted by halogen,where, in addition, one or more CH₂ groups in these radicals may bereplaced by —O—, —S—,

 —C≡C—, —CF₂O—, —OCF₂—, —OC—O— or —O—CO— in such a way that O atoms arenot linked directly to one another, a cyclopropyl ring, cyclobutyl ringor cyclopentyl ring.
 9. The liquid-crystalline medium according to claim1, wherein the medium additionally comprises one or more compoundsselected from the group of the compounds of the formulae BC, CR, PH-1,PH-2, BF-1, BF-2, BS-1 and BS-2,

in which R^(B1), R^(B2), R^(CR1), R^(CR2), R¹, R² each, independently ofone another, denote H, an alkyl or alkenyl radical having up to 15 Catoms which is unsubstituted, monosubstituted by CN or CF₃ or at leastmonosubstituted by halogen, where, in addition, one or more CH₂ groupsin these radicals may be replaced by —O—, —S—,

 —C≡C—, —CF₂O—, —OCF₂—, —OC—O— or —O—CO— in such a way that O atoms arenot linked directly to one another, a cyclopropyl ring, cyclobutyl ringor cyclopentyl ring, c denotes 0, 1 or 2 and d denotes 1 or
 2. 10. Theliquid-crystalline medium according to claim 1, wherein the mediumadditionally comprises one or more compounds of the following formulae:


11. The liquid-crystalline medium according to claim 1, wherein themedium comprises 5-60% of the compound of the following formula:


12. The liquid-crystalline medium according to claim 1, wherein themedium additionally comprises one or more compounds selected from thegroup of the compounds of the formulae P-1 to P-5,

in which R denotes straight-chain alkyl, alkoxy or alkenyl, each having1 or 2 to 6 C atoms respectively, and X denotes F, Cl, CF₃, OCF₃,OCHFCF₃ or CCF₂CHFCF₃.
 13. The liquid-crystalline medium according toclaim 1, wherein the medium additionally comprises one or more compoundsselected from the group of the compounds of the following formulae:

in which R denotes a straight-chain alkyl or alkoxy radical having 1-7 Catoms, m denotes 0, 1, 2, 3, 4, 5 or 6, n denotes 0, 1, 2, 3 or 4, R¹,R² each, independently of one another, denote H, an alkyl or alkenylradical having up to 15 C atoms which is unsubstituted, monosubstitutedby CN or CF₃ or at least monosubstituted by halogen, where, in addition,one or more CH₂ groups in these radicals may be replaced by —O—, —S—,

 —C≡C—, —CF₂O—, —OCF₂—, —OC—O— or —O—CO— in such a way that O atoms arenot linked directly to one another, a cyclopropyl ring, cyclobutyl ringor cyclopentyl ring, c denotes 0, 1 or 2 d denotes 1 or 2, R and R¹⁰each, independently of one another, denote H, an alkyl or alkenylradical having up to 15 C atoms which is unsubstituted, monosubstitutedby CN or CF₃ or at least monosubstituted by halogen, where, in addition,one or more CH₂ groups in these radicals may be replaced by —O—, —S—,

 —C≡C—, —CF₂O—, —OCF₂—, —OC—O— or —O—CO— in such a way that O atoms arenot linked directly to one another, a cyclopropyl ring, cyclobutyl ringor cyclopentyl ring, alkyl and alkyl* each, independently of oneanother, denote a straight-chain alkyl radical having 1-6 C atoms,alkenyl and alkenyl* each, independently of one another, denote astraight-chain alkenyl radical having 2-6 C atoms, and x denotes 1 to 6.14. The liquid-crystalline medium according to claim 1, wherein themedium comprises the compound of the formula CC-4-V1 and the compound ofthe formula CC-3-V1:


15. The liquid-crystalline medium according to claim 1, wherein themedium comprises at least one polymerisable compound.
 16. Theliquid-crystalline medium according to claim 1, wherein the mediumfurther comprises one or more additives.
 17. The liquid-crystallinemedium according to claim 16, wherein the additive is a free-radicalscavenger, antioxidant, dopant and/or UV stabiliser.
 18. A process forthe preparation of a liquid-crystalline medium according to claim 1,comprising mixing at least one compound of the formulae IA to IH with atleast one compound of the formula IIA or IIB of claim 1 and with atleast one further compound wherein the further compound is a mesogeniccompound, and optionally further mixing one or more additives andoptionally further mixing at least one polymerisable compound.
 19. Anelectro-optical display having active-matrix addressing, whichcomprises, as dielectric, a liquid-crystalline medium according toclaim
 1. 20. The electro-optical display according to claim 19, which isa VA, PSA, PA-VA, PS-VA, SA-VA, SS-VA, PALC, IPS, PS-IPS, FFS, UB-FFS orPS-FFS display.
 21. The electro-optical display according to claim 20,which is an IPS, PS-IPS, FFS or PS-FFS display which has a planaralignment layer.
 22. The liquid-crystalline medium according to claim 1,wherein the medium has a negative dielectric anisotropy, Δε, of lessthan −0.5.
 23. The liquid-crystalline medium according to claim 1,wherein the medium has a negative dielectric anisotropy, Δε, of −0.5 to−8.0.
 24. The liquid-crystalline medium according to claim 1, whereinthe medium further comprises one or more compounds of the followingformulae:

in which alkyl and alkyl* each, independently of one another, denote astraight-chain alkyl radical having 1-6 C atoms, and alkenyl andalkenyl* each, independently of one another, denote a straight-chainalkenyl radical having 2-6 C atoms.
 25. The liquid-crystalline mediumaccording to claim 1, wherein the medium comprises one or more compoundsof formula IIA or IIB of claim 1, which are of the following formulae:

in which alkyl and alkyl* each, independently of one another, denote astraight-chain alkyl radical having 1-6 C atoms, and alkenyl denotes astraight-chain alkenyl radical having 2-6 C atoms.
 26. Theliquid-crystalline medium according to claim 1, wherein the mediumfurther comprises one or more stabilizer compounds of the followingformulae:


27. The liquid-crystalline medium according to claim 1, wherein themedium further comprises one or more reactive mesogen compounds of thefollowing formulae:


28. The liquid-crystalline medium according to claim 1, wherein themedium further comprises one or more SA-VA compounds of the followingformulae: